G. E. Stillman - Publications, H-index & Citations

G. E. Stillman

机构信息待补充

41H指数

260论文数

5.5K被引数

收录论文 9

发表时间

Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

2000-07-10

PREAI

Yang, Q; Scott, DS; Chung, T; Stillman, GE

Precipitate formation in carbon-doped base of InGaP GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

1999-05-17

PREAI

Yang, Q; Scott, D; Miller, J; Meyer, P; Kuo, HC; Baker, JE; Stillman, GE

Activation studies of low-dose Si implants in gallium nitride

APPLIED PHYSICS LETTERS

IF3.6

1998-12-28

PREAI

Eiting, CJ; Grudowski, PA; Dupuis, RD; Hsia, H; Tang, Z; Becher, D; Kuo, H; Stillman, GE; Feng, M

GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

APPLIED PHYSICS LETTERS

IF3.6

1997-07-07

PREAI

Sengupta, DK; Fang, W; Malin, JI; Li, J; Horton, T; Curtis, AP; Hsieh, KC; Chuang, SL; Chen, H; Feng, M; Stillman, GE; Li, L; Liu, HC; Bandara, KMSV; Gunapala, SD; Wang, WI

Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing

APPLIED PHYSICS LETTERS

IF3.6

1997-06-30

PREAI

Sengupta, DK; Horton, T; Fang, W; Curtis, A; Li, J; Chuang, SL; Chen, H; Feng, M; Stillman, GE; Kar, A; Mazumder, J; Li, L; Liu, HC

Semi-insulating In0.49Ga0.51P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

1997-04-07

PREAI

Hartmann, QJ; Gardner, NF; Horton, TU; Curtis, AP; Ahmari, DA; Fresina, MT; Baker, JE; Stillman, GE

p-type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 mu m

APPLIED PHYSICS LETTERS

IF3.6

1996-11-18

PREAI

Sengupta, DK; Jackson, SL; Ahmari, D; Kuo, HC; Malin, JI; Thomas, S; Feng, M; Stillman, GE; Chang, YC; Li, L; Liu, HC

Effects of thermally grown native oxides on the luminescence properties of compound semiconductors

APPLIED PHYSICS LETTERS

IF3.6

1996-08-12

PREAI

Islam, MR; Dupuis, RD; Curtis, AP; Stillman, GE

THE ENGINEERING RESEARCH-CENTER FOR COMPOUND SEMICONDUCTOR MICROELECTRONICS

PROCEEDINGS OF THE IEEE

IF25.9

1993-01-01

PREAI

BISHOP, SG; ADESIDA, I; COLEMAN, JJ; DETEMPLE, TA; FENG, M; HESS, K; HOLONYAK, N; KANG, SM; STILLMAN, GE; VERDEYEN, JT

研究方向