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Zongmeng Yang

Peking University

H指数:7

被引数:174

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Computational design of two-dimensional MA2Z4 family field-effect transistor for future Ångström-scale CMOS technology nodes

二维MA₂Z₄家族场效应晶体管面向未来埃级CMOS技术节点的计算设计

IF22.3

2025-12-030

OA

Ab initio quantum transport simulation of the sub-1 nm gate-length monolayer and bilayer α-MoTe2 field-effect transistors

从头算量子输运模拟亚1 nm栅长单层和双层α-MoTe2场效应晶体管

IF0

2025-08-140

PRE

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

五边形2D高磁: 材料筛选和高磁隧道结器件应用

ADVANCED FUNCTIONAL MATERIALS

IF19

2025-05-150

OA

Performance limit prediction of atomically thin In2O3 transistors

原子层厚度In₂O₃晶体管的性能极限预测

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2025-03-120

PRE

Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-010

PRE

Ballistic 2D MoS2 transistors with ultra-high on-state currents

SCIENCE CHINA-MATERIALS

IF7.4

2024-06-270

PRE

Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

具有自旋轨道耦合的二维范德华铁电半导体中的可调谐自旋光电流效应

PHYSICAL REVIEW B

IF3.7

2024-05-033

PRE

Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit

ADVANCED FUNCTIONAL MATERIALS

IF19

2024-04-124

PRE

Light-assisted Néel spin currents in PT-symmetric antiferromagnetic semiconductors

PT对称反铁磁半导体中的光辅助n é el自旋电流

PHYSICAL REVIEW B

IF3.7

2024-02-131

PRE

N- and P-type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors

单层氢化硼砷晶体管的N型和P型对称缩放行为

PHYSICAL REVIEW MATERIALS

IF3.4

2024-01-261

PRE

Low-thermal-budget synthesis of monolayer MoS2

SCIENCE CHINA-MATERIALS

IF7.4

2023-12-151

PRE

Polarization tunable bidirectional photoresponse in Van der Waals α-In2Se3/NbX2 (X = S, Se, and Te) ferroelectric diodes

PHYSICAL REVIEW MATERIALS

IF3.4

2023-08-288

PRE