Shibo Fang

singapore university of technology and design

H指数:15

被引数:581

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Giant Bulk Photovoltaic Effect in Two-Dimensional Topological Ferroelectric Semimetal

二维拓扑铁电半金属中的巨体光伏效应

Advanced Science

IF14.1

2026-06-120

OAAI

Altermagnetic Flatband-Driven Fermi Surface Geometry for Giant Tunneling Magnetoresistance

反铁磁平坦带驱动的费米面几何对巨隧穿磁阻的影响

Advanced Functional Materials

IF19

2026-02-120

PRE

Ferroelastic altermagnetism

铁弹反铁磁性

npj Quantum Materials

IF6.2

2025-12-160

Computational design of two-dimensional MA2Z4 family field-effect transistor for future Ångström-scale CMOS technology nodes

二维MA₂Z₄家族场效应晶体管面向未来埃级CMOS技术节点的计算设计

InfoMat

IF22.3

2025-12-030

Layer Dependence and Point Defect for Sub-5 nm 2D Hydrogenated GaN Transistors

层依赖性与点缺陷对亚5纳米二维氢化GaN晶体管的影响

ACS Applied Electronic Materials

IF4.7

2025-11-100

PRE

Dinosaur skeleton-like biomass-derived carbon for electromagnetic wave absorption enhancement and exploration into multifunctional applications

恐龙骨架状生物质衍生碳用于电磁波吸收增强及多功能应用探索

Materials Today Communications

IF4.5

2025-10-060

PRE

Ab initio quantum transport simulation of the sub-1 nm gate-length monolayer and bilayer α-MoTe2 field-effect transistors

从头算量子输运模拟亚1 nm栅长单层和双层α-MoTe2场效应晶体管

j mater chem a

IF0

2025-08-140

PRE

Performance limit prediction of atomically thin In2O3 transistors

原子层厚度In₂O₃晶体管的性能极限预测

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2025-03-120

PRE

Ab-Initio Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe2 Transistors: Implications for Ultra-Scaled CMOS Technology

从头算量子输运模拟亚1纳米栅长单层和双层WSe2晶体管：对超缩放CMOS技术的启示

ACS APPLIED NANO MATERIALS

IF5.5

2025-02-060

PRE

Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-010

PRE

First-principles analysis of the photocurrent in a monolayer α-selenium p-n junction optoelectronic device

基于第一性原理的α-硒单层p-n结光电器件光电流分析

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

IF2.9

2025-01-010

PRE

Photodetector Based on Elemental Ferroelectric Black Phosphorus-like Bismuth

基于元素铁电黑磷类铋的光电探测器

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-11-060

PRE

Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

具有自旋轨道耦合的二维范德华铁电半导体中的可调谐自旋光电流效应

PHYSICAL REVIEW B

IF3.7

2024-05-033

PRE

Light-assisted Néel spin currents in PT-symmetric antiferromagnetic semiconductors

PT对称反铁磁半导体中的光辅助n é el自旋电流

PHYSICAL REVIEW B

IF3.7

2024-02-131

PRE

N- and P-type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors

单层氢化硼砷晶体管的N型和P型对称缩放行为

PHYSICAL REVIEW MATERIALS

IF3.4

2024-01-261

PRE

Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices

面向高性能器件的Sub-5 nm栅极全包围InP纳米线晶体管

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-12-280

PRE

Monolayer WSi2N4: A promising channel material for sub-5-nm-gate homogeneous CMOS devices

单层WSi2N4: 用于sub-5-nm-gate均质CMOS器件的有前途的沟道材料

PHYSICAL REVIEW APPLIED

IF4.4

2023-12-2615

PRE

Low-thermal-budget synthesis of monolayer MoS2

SCIENCE CHINA-MATERIALS

IF7.4

2023-12-151

PRE

Polarization tunable bidirectional photoresponse in Van der Waals α-In2Se3/NbX2 (X = S, Se, and Te) ferroelectric diodes

PHYSICAL REVIEW MATERIALS

IF3.4

2023-08-288

PRE

Layer-Dependent Magnetoresistance and Spin-Transfer Torque in MnSe2-Based Magnetic Tunnel Junctions

PHYSICAL REVIEW APPLIED

IF4.4

2023-06-027

PRE

Shibo Fang

个人简介

教育背景

工作经历

荣誉奖项

研究方向