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Xingyue Yang

Peking University

H指数:6

被引数:64

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Layer Dependence and Point Defect for Sub-5 nm 2D Hydrogenated GaN Transistors

层依赖性与点缺陷对亚5纳米二维氢化GaN晶体管的影响

ACS Applied Electronic Materials

IF4.7

2025-11-100

PRE

Ab initio quantum transport investigation of Sub-3 nm β-InSe transistors for future high-performance nanoelectronics

从头算量子输运研究用于未来高性能纳电子学的Sub-3 nm β-InSe晶体管

IF0

2025-10-130

OAAI

Ab-Initio Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe2 Transistors: Implications for Ultra-Scaled CMOS Technology

从头算量子输运模拟亚1纳米栅长单层和双层WSe2晶体管：对超缩放CMOS技术的启示

ACS APPLIED NANO MATERIALS

IF5.5

2025-02-060

PRE

Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-010

PRE

Photodetector Based on Elemental Ferroelectric Black Phosphorus-like Bismuth

基于元素铁电黑磷类铋的光电探测器

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-11-060

PRE

Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

具有自旋轨道耦合的二维范德华铁电半导体中的可调谐自旋光电流效应

PHYSICAL REVIEW B

IF3.7

2024-05-033

PRE

N- and P-type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors

单层氢化硼砷晶体管的N型和P型对称缩放行为

PHYSICAL REVIEW MATERIALS

IF3.4

2024-01-261

PRE