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T

T.S. Cheng

Southern University of Science and Technology

27H指数
158论文数
2.7K被引数
收录论文 13
发表时间
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Engineered Ce2Sn2O7/TiO2 Heterojunctions for High-Performance MEMS Ammonia Gas Sensor工程化Ce2Sn2O7/TiO2异质结用于高性能MEMS氨气传感器
errAdvanced Materials Technologies
IF6.2
err2025-12-12
err0
PREAI
errMathankumar Ganesan; Jin Li; Tongheng Cheng; Fei Wang
err分享
err收藏
Direct band-gap crossover in epitaxial monolayer boron nitride
errNATURE COMMUNICATIONS
IF15.7
err2019-06-14
err201
errOAAI
errElias, C.; Valvin, P.; Pelini, T.; Summerfield, A.; Mellor, C. J.; Cheng, T. S.; Eaves, L.; Foxon, C. T.; Beton, P. H.; Novikov, S., V; Gil, B.; Cassabois, G.
err分享
err收藏
An atomic carbon source for high temperature molecular beam epitaxy of graphene
errSCIENTIFIC REPORTS
IF3.9
err2017-07-26
err14
errOAAI
errAlbar, J. D.; Summerfield, A.; Cheng, T. S.; Davies, A.; Smith, E. F.; Khlobystov, A. N.; Mellor, C. J.; Taniguchi, T.; Watanabe, K.; Foxon, C. T.; Eaves, L.; Beton, P. H.; Novikov, S. V.
err分享
err收藏
Effects of partial premixing on pollutant emissions in swirling methane jet flames
errCOMBUSTION AND FLAME
IF6.2
err2001-04-01
err30
PREAI
errCheng, TS; Chao, YC; Wu, DC; Hsu, HW; Yuan, T
err分享
err收藏
Strong blue emission from As doped GaN grown by molecular beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-10-16
err38
PREAI
errWinser, AJ; Novikov, SV; Davis, CS; Cheng, TS; Foxon, CT; Harrison, I
err分享
err收藏
Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN
errPLASMA SOURCES SCIENCE & TECHNOLOGY
IF3.3
err2000-01-07
err51
PREAI
errBlant, AV; Hughes, OH; Cheng, TS; Novikov, SV; Foxon, CT
err分享
err收藏
Investigations of allowed and forbidden transitions in (AlGa)As/GaAs multiple quantum wells
errVACUUM
IF3.9
err1998-05-01
err3
PREAI
errSitarek, P; Sek, G; Misiewicz, J; Cheng, TS
err分享
err收藏
Far-infrared and Raman analysis of phonons and phonon interface modes in GaN epilayers on GaAs and GaP substrates
errPHYSICAL REVIEW B
IF3.7
err1998-02-15
err49
PREAI
errMirjalili, G; Parker, TJ; Shayesteh, SF; Bulbul, MM; Smith, SRP; Cheng, TS; Foxon, CT
err分享
err收藏
A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates
errAPPLIED SURFACE SCIENCE
IF6.9
err1998-01-01
err10
PREAI
errTricker, DM; Brown, PD; Cheng, TS; Foxon, CT; Humphreys, CJ
err分享
err收藏
Domain boundaries in epitaxial wurtzite GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-03-10
err59
PREAI
errXin, Y; Brown, PD; Humphreys, CJ; Cheng, TS; Foxon, CT
err分享
err收藏
Cyclotron resonance in ultra-low-hole-density narrow p-type GaAs/(Al,Ga)As quantum wells
errPHYSICAL REVIEW B
IF3.7
err1997-01-15
err70
errOAAI
errCole, BE; Chamberlain, JM; Henini, M; Cheng, T; Batty, W; Wittlin, A; Perenboom, JAAJ; Ardavan, A; Polisski, A; Singleton, J
err分享
err收藏
Lattice parameters of gallium nitride氮化镓的晶格参数
errAPPLIED PHYSICS LETTERS
IF3.6
err1996-07-01
err411
PREAI
errLeszczynski, M; Teisseyre, H; Suski, T; Grzegory, I; Bockowski, M; Jun, J; Porowski, S; Pakula, K; Baranowski, JM; Foxon, CT; Cheng, TS
err分享
err收藏
Far infrared spectroscopy of thin epitaxial layers of GaN deposited by molecular beam epitaxy on GaP substrates
errINFRARED PHYSICS & TECHNOLOGY
IF3.4
err1996-04-01
err10
PREAI
errMirjalili, G; Dumelow, T; Parker, TJ; Shayesteh, SF; Cheng, TS; Foxon, CT; Jenkins, LC; Lacklinson, DE
err分享
err收藏

研究方向

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合作学者
合作期刊
T
Takashi Taniguchi
H 指数: 198 · 论文数: 5.5K
王飞 封面图
王飞 (Fei Wang)
H 指数: 77 · 论文数: 1.0K
C
C. J. Humphreys
H 指数: 66 · 论文数: 812
L
L. Eaves
H 指数: 66 · 论文数: 753
C
C. T. Foxon
H 指数: 65 · 论文数: 649
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