E. Kohn - Publications, H-index & Citations

E. Kohn

ulm university

44H指数

350论文数

6.5K被引数

收录论文 20

发表时间

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS

IF3.6

2023-10-24

PREAI

Quinones, C. E.; Khachariya, D.; Bagheri, P.; Reddy, P.; Mita, S.; Kirste, R.; Rathkanthiwar, S.; Tweedie, J.; Pavlidis, S.; Kohn, E.; Collazo, R.; Sitar, Z.

Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation

APPLIED PHYSICS LETTERS

IF3.6

2022-04-29

OAAI

Khachariya, Dolar; Szymanski, Dennis; Reddy, Pramod; Kohn, Erhard; Sitar, Zlatko; Collazo, Ramon; Pavlidis, Spyridon

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

APPLIED PHYSICS LETTERS

IF3.6

2022-04-26

OAAI

Khachariya, Dolar; Mita, Seiji; Reddy, Pramod; Dangi, Saroj; Dycus, J. Houston; Bagheri, Pegah; Breckenridge, M. Hayden; Sengupta, Rohan; Rathkanthiwar, Shashwat; Kirste, Ronny; Kohn, Erhard; Sitar, Zlatko; Collazo, Ramon; Pavlidis, Spyridon

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS

IF3.6

2021-11-02

OAAI

Reddy, Pramod; Khachariya, Dolar; Mecouch, Will; Breckenridge, M. Hayden; Bagheri, Pegah; Guan, Yan; Kim, Ji Hyun; Pavlidis, Spyridon; Kirste, Ronny; Mita, Seiji; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS

IF3.6

2021-03-23

OAAI

Khachariya, Dolar; Szymanski, Dennis; Breckenridge, M. Hayden; Reddy, Pramod; Kohn, Erhard; Sitar, Zlatko; Collazo, Ramon; Pavlidis, Spyridon

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

APPLIED PHYSICS LETTERS

IF3.6

2020-02-24

OAAI

Reddy, Pramod; Breckenridge, M. Hayden; Guo, Qiang; Klump, Andrew; Khachariya, Dolar; Pavlidis, Spyridon; Mecouch, Will; Mita, Seiji; Moody, Baxter; Tweedie, James; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS

IF3.6

2017-07-20

PREAI

Sarkar, Biplab; Mita, Seiji; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Tweedie, James; Bryan, Isaac; Bryan, Zachary; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

APPLIED PHYSICS LETTERS

IF3.6

2017-01-04

PREAI

Reddy, Pramod; Sarkar, Biplab; Kaess, Felix; Gerhold, Michael; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties 通过晶粒和晶界特性控制超薄纳米金刚石膜的面内热导率

ACTA MATERIALIA

IF9.3

2016-01-01

115

OAAI

Anaya, Julian; Rossi, Stefano; Alomari, Mohammed; Kohn, Erhard; Toth, Lajos; Pecz, Bela; Hobart, Karl D.; Anderson, Travis J.; Feygelson, Tatyana I.; Pate, Bradford B.; Kuball, Martin

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

APPLIED PHYSICS LETTERS

IF3.6

2015-06-01

OAAI

Anaya, Julian; Rossi, Stefano; Alomari, Mohammed; Kohn, Erhard; Toth, Lajos; Pecz, Bela; Kuball, Martin

Surface structure and electrochemical characteristics of boron-doped diamond exposed to rf N2-plasma

JOURNAL OF ELECTROANALYTICAL CHEMISTRY

IF4.1

2011-07-01

PREAI

Denisenko, A.; Romanyuk, A.; Kibler, L. A.; Kohn, E.

Nanocrystalline diamond microelectrode arrays fabricated on sapphire technology for high-time resolution of quantal catecholamine secretion from chromaffin cells

BIOSENSORS & BIOELECTRONICS

IF10.5

2010-09-01

OAAI

Carabelli, V.; Gosso, S.; Marcantoni, A.; Xu, Y.; Colombo, E.; Gao, Z.; Vittone, E.; Kohn, E.; Pasquarelli, A.; Carbone, E.

Lateral Depletion of Contact to Metallic Nanoparticles on Boron-Doped Diamond Electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2010-01-01

PREAI

Denisenko, A.; Pietzka, C.; Kibler, L. A.; Kohn, E.

Unlocking diamond's potential as an electronic material

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES

IF3.7

2007-11-19

PREAI

Balmer, R. S.; Friel, I.; Woollard, S. M.; Wort, C. J. H.; Scarsbrook, G. A.; Coe, S. E.; El-Hajj, H.; Kaiser, A.; Denisenko, A.; Kohn, E.; Isberg, J.

Three-dimensional integration scheme with a thermal budget below 300°C

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2007-09-01

PREAI

Benkart, P.; Munding, A.; Kaiser, A.; Kohn, E.; Heittmann, A.; Huebner, H.; Ramacher, U.

High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111)

APPLIED PHYSICS LETTERS

IF3.6

2004-11-29

136

PREAI