Tatsuya Fujishima - Publications, H-index & Citations

Tatsuya Fujishima

Kyushu Institute of Technology

10H指数

47论文数

934被引数

收录论文 9

发表时间

Field plate multi-finger diamond MOSFET with ampere-class current capability and a breakdown voltage of 550 V 带安培级电流能力和550 V击穿电压的场板多指金刚石MOSFET

Applied Physics Express

IF2.2

2026-03-01

PREAI

Shoji, S.; Oi, N.; Kawai, S.; Yoshida, R.; Ota, K.; Watanabe, A.; Omura, I.; Ueda, K.; Fujishima, T.

Heavily Boron-Doped Source/Drain Layers for Low Contact Resistance and Subthreshold Swing in (001) C–H Diamond MOSFETs 高硼掺杂源/漏层用于(001) C–H金刚石MOSFET的低接触电阻和亚阈值摆幅

IEEE Electron Device Letters

IF4.5

2026-01-06

OAAI

Ryosuke Yamamoto; Kento Narita; Kosuke Ota; Nobutaka Oi; Atsushi Hiraiwa; Tatsuya Fujishima; Hiroshi Kawarada

Normally-off operation in vertical diamond MOSFETs using an oxidized Si-terminated diamond channel 使用氧化的Si终止金刚石沟道在垂直金刚石mosfet中的常关操作

CARBON

IF11.6

2023-09-01

PREAI

Ota, Kosuke; Fu, Yu; Narita, Kento; Wakabayashi, Chiyuki; Hiraiwa, Atsushi; Fujishima, Tatsuya; Kawarada, Hiroshi

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

APPLIED PHYSICS LETTERS

IF3.6

2014-08-08

OAAI

Uedono, Akira; Fujishima, Tatsuya; Piedra, Daniel; Yoshihara, Nakaaki; Ishibashi, Shoji; Sumiya, Masatomo; Laboutin, Oleg; Johnson, Wayne; Palacios, Tomas

Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam

APPLIED PHYSICS LETTERS

IF3.6

2014-02-24

PREAI

Uedono, Akira; Fujishima, Tatsuya; Cao, Yu; Zhang, Yang; Yoshihara, Nakaaki; Ishibashi, Shoji; Sumiya, Masatomo; Laboutin, Oleg; Johnson, Wayne; Palacios, Tomas

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

APPLIED PHYSICS LETTERS

IF3.6

2013-08-23

PREAI

Fujishima, Tatsuya; Joglekar, Sameer; Piedra, Daniel; Lee, Hyung-Seok; Zhang, Yuhao; Uedono, Akira; Palacios, Tomas

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2013-07-19

OAAI

Zhang, Yuhao; Sun, Min; Joglekar, Sameer J.; Fujishima, Tatsuya; Palacios, Tomas

Reduction in threshold voltages in GaN-based metal oxide semiconductor field effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2008-06-19

OAAI

Fujishima, Tatsuya; Otake, Hirotaka; Ohta, Hiroaki

In vivo silencing of a molecular target by short interfering RNA electroporation:: tumor vascularization correlates to delivery efficiency

MOLECULAR CANCER THERAPEUTICS

IF5.5

2008-01-17

OAAI

Takei, Yoshifumi; Nemoto, Toshio; Mu, Ping; Fujishima, Tatsuya; Ishimoto, Takuji; Hayakawa, Yasuhiko; Yuzawa, Yukio; Matsuo, Seiichi; Muramatsu, Takashi; Kadomatsu, Kenji

研究方向