R. Degraeve - Publications, H-index & Citations

R. Degraeve

IMEC

58H指数

546论文数

1.5W被引数

收录论文 29

发表时间

Exploring the Floating Body Effect in Bulk nFET Devices for Enhanced Physical Reservoir Computing 探索体nFET器件中的浮体效应对物理增强型随机计算的促进作用

IEEE Transactions on Electron Devices

IF3.2

2026-05-27

PREAI

Y. Y. Guo; R. Degraeve; P. Saraza Canflanca; J. Eerdekens; E. Bury; I. Verbauwhede

An Integrated PCB Platform for CMOS Variability and Aging Characterization of Array-Based ICs

IEEE Transactions on Instrumentation and Measurement

IF5.9

2026-01-20

PREAI

Javier Diaz-Fortuny; Pablo Saraza-Canflanca; Erik Bury; Robin Degraeve; Ben Kaczer

RTNinja: A generalized machine learning framework for analyzing random telegraph noise signals in nanoelectronic devices RTNinja：一种用于分析纳电子器件中随机电报噪声信号的一般化机器学习框架

APL Machine Learning

IF0

2025-12-01

OAAI

Varanasi, Anirudh; Degraeve, Robin; Roussel, Philippe; Merckling, Clement

Unified Analysis of Time-Dependent Dielectric Breakdown to Extend Reliability Margins 对时序依赖性介质击穿的统一分析以扩展可靠性余量

IEEE Transactions on Electron Devices

IF3.2

2025-10-06

PREAI

A. Vici; L. Pantisano; P. J. Roussel; A. Chasin; J. Franco; B. Kaczer; I. Meric; S. M. Ramey; R. Degraeve; J. Hicks

Markov model describing progressive degradation of local percolation path in thin oxides 描述薄氧化物中局部渗流路径逐渐退化的马尔可夫模型

SOLID-STATE ELECTRONICS

IF1.4

2025-10-01

PREAI

Sacchi, Sara; Varanasi, Anirudh; Degraeve, Robin; Vici, Andrea; Molinaro, Giorgio; Franco, Jacopo; Roussel, Philippe; Kaczer, Ben; Merckling, Clement

An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage

MICROMACHINES

IF3

2024-06-08

OAAI

Diaz-Fortuny, Javier; Saraza-Canflanca, Pablo; Bury, Erik; Degraeve, Robin; Kaczer, Ben

Chalcogenide Ovonic Threshold Switching Selector 硫族化合物双向阈值开关选择器

NANO-MICRO LETTERS

IF36.3

2024-01-11

OAAI

Zhao, Zihao; Clima, Sergiu; Garbin, Daniele; Degraeve, Robin; Pourtois, Geoffrey; Song, Zhitang; Zhu, Min

Ovonic Threshold Switch Chalcogenides: Connecting the First-Principles Electronic Structure to Selector Device Parameters 双向阈值开关硫族化物: 将第一原理电子结构连接到选择器器件参数

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-12-26

PREAI

Clima, Sergiu; Ravsher, Taras; Garbin, Daniele; Degraeve, Robin; Fantini, Andrea; Delhougne, Romain; Kar, Gouri Sankar; Pourtois, Geoffrey

Defect profiling in FEFET Si:HfO2 layers

APPLIED PHYSICS LETTERS

IF3.6

2020-11-17

OAAI

O'Sullivan, B. J.; Putcha, V; Izmailov, R.; Afanas'ev, V; Simoen, E.; Jung, T.; Higashi, Y.; Degraeve, R.; Truijen, B.; Kaczer, B.; Ronchi, N.; McMitchell, S.; Banerjee, K.; Clima, S.; Breuil, L.; Van den Bosch, G.; Linten, D.; Van Houdt, J.

Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

APPLIED PHYSICS LETTERS

IF3.6

2016-07-12

PREAI

Hou, Y.; Celano, U.; Goux, L.; Liu, L.; Degraeve, R.; Cheng, Y.; Kang, J.; Jurczak, M.; Vandervorst, W.

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

APPLIED PHYSICS LETTERS

IF3.6

2016-03-24

PREAI

Hou, Y.; Celano, U.; Goux, L.; Liu, L.; Fantini, A.; Degraeve, R.; Youssef, A.; Xu, Z.; Cheng, Y.; Kang, J.; Jurczak, M.; Vandervorst, W.

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory 基于细丝的氧化物电阻开关存储器中的三维导电通道成像

NANO LETTERS

IF9.1

2015-11-03

170

PREAI

Celano, Umberto; Goux, Ludovic; Degraeve, Robin; Fantini, Andrea; Richard, Olivier; Bender, Hugo; Jurczak, Malgorzata; Vandervorst, Wilfried

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

APPLIED PHYSICS LETTERS

IF3.6

2015-02-02

PREAI

Chen, C. Y.; Goux, L.; Fantini, A.; Clima, S.; Degraeve, R.; Redolfi, A.; Chen, Y. Y.; Groeseneken, G.; Jurczak, M.

Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

APPLIED PHYSICS LETTERS

IF3.6

2014-06-13

OAAI

Belmonte, A.; Degraeve, R.; Fantini, A.; Kim, W.; Houssa, M.; Jurczak, M.; Goux, L.

First-principles study of oxygen and aluminum defects in β-Si3N4: Compensation and charge trapping

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2014-01-01

PREAI

Elena Grillo, Maria; Elliott, Simon D.; Rodriguez, Jesus; Anez, Rafael; Santiago Coll, David; Suhane, Amit; Breuil, Leurent; Arreghini, Antonio; Degraeve, Robin; Shariq, Ahmed; Beyer, Volkhard; Czernohorsky, Malte

First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

APPLIED PHYSICS LETTERS

IF3.6

2012-03-26

PREAI

Clima, S.; Chen, Y. Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G.

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

APPLIED PHYSICS LETTERS

IF3.6

2011-08-01

100

OAAI