V. V. Afanas’ev - Publications, H-index & Citations

Conducting and charge-trapping defects in buried oxide layers of SIMOX structures

IF3.3

2019-12-07

PREAI

Afanas'ev, VV; Revesz, AG; Hughes, HL

Trap generation in buried oxides of silicon-on-insulator structures by vacuum ultraviolet radiation

IF3.3

2019-12-07

PREAI

Afanas'ev, VV; Brown, GA; Hughes, HL; Liu, ST; Revesz, AG

IF3.3

2019-12-06

PREAI

Afanas'ev, VV; Stesmans, A; Revesz, AG; Hughes, HL

Oxygen vacancies in SiO2, layers an Si produced at high temperature

IF3.3

2019-12-06

PREAI

Afanas'ev, VV; Stesmans, A

Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport 过渡金属二硫属化物衬底上的硅烯纳米带: 对电子结构和弹道传输的影响

IF3.3

2019-12-06

PREAI

Afanas'ev, VV; Stesmans, A; Revesz, AG; Hughes, HL

Deep electron and hole polarons and bipolarons in amorphous oxide

IF9

2016-08-20

PREAI

van den Broek, Bas; Houssa, Michel; Lu, Augustin; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre

Topological to trivial insulating phase transition in stanene stanene中拓扑到平凡的绝缘相变

IF3.7

2016-07-21

OAAI

Kaviani, Moloud; Strand, Jack; Afanas'ev, Valery V.; Shluger, Alexander L.

Theoretical models of hydrogen-induced defects in amorphous silicon dioxide

IF9

2016-01-09

PREAI

Houssa, Michel; van den Broek, Bas; Iordanidou, Konstantina; Lu, Anh Khoa Augustin; Pourtois, Geoffrey; Locquet, Jean-Pierre; Afanas'ev, Valery; Stesmans, Andre

Nature of intrinsic and extrinsic electron trapping in SiO2 SiO2中本征和非本征电子俘获的性质

IF3.7

2015-07-10

PREAI

El-Sayed, Al-Moatasem; Wimmer, Yannick; Goes, Wolfgang; Grasser, Tibor; Afanas'ev, Valery V.; Shluger, Alexander L.

Vibrational properties of silicene and germanene 硅烯和锗烯的振动性质

IF3.7

2014-03-10

104

OAAI

El-Sayed, Al-Moatasem; Watkins, Matthew B.; Afanas'ev, Valery V.; Shluger, Alexander L.

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

IF9

2012-12-17

139

PREAI

Scalise, Emilio; Houssa, Michel; Pourtois, Geoffrey; van den Broek, B.; Afanas'ev, Valery; Stesmans, Andre

Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

IF9

2011-11-11

657

PREAI

Scalise, Emilio; Houssa, Michel; Pourtois, Geoffrey; Afanas'ev, Valery V.; Stesmans, Andre

Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3:: Atomically abrupt versus interlayer-containing interfaces -: art. no. 032104

IF3.6

2006-03-31

PREAI

Afanas'ev, VV; Shamuilia, S; Stesmans, A; Dimoulas, A; Panayiotatos, Y; Sotiropoulos, A; Houssa, M; Brunco, DP

Electron spin resonance probing of fundamental point defects in nanometer-sized silica particles -: art. no. 155335

IF3.6

2006-01-18

OAAI

Afanas'ev, VV; Stesmans, A; Edge, LF; Schlom, DG; Heeg, T; Schubert, J

Interface traps and dangling-bond defects in (100)Ge/HfO2 -: art. no. 032107

IF3.7

2005-10-31

PREAI

Stesmans, A; Clémer, K; Afanas'ev, VV

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

IF3.6

2005-07-13

135

PREAI

Afanas'ev, VV; Fedorenko, YG; Stesmans, A

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2005-07-01

PREAI

Houssa, M; De Jaeger, B; Delabie, A; Van Elshocht, S; Afanas'ev, VV; Autran, JL; Stesmans, A; Meuris, M; Heyns, MM

Electron photoemission from conducting nitrides (TiNx, TaNx) into SiO2 and HfO2 -: art. no. 232902

Ternary rare-earth metal oxide high-k layers on silicon oxide -: art. no. 132903

IF3.6

2005-06-03

PREAI

Afanas'ev, VV; Stesmans, A; Pantisano, L; Schram, T