Joachim Würfl - Publications, H-index & Citations

Joachim Würfl

Leibniz Association

34H指数

231论文数

4.3K被引数

收录论文 15

发表时间

All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates

APPLIED PHYSICS LETTERS

IF3.6

2025-02-11

OAAI

Tetzner, Kornelius; Thies, Andreas; Brusaterra, Enrico; Kuelberg, Alexander; Paul, Pallabi; Ostermay, Ina; Wuerfl, Joachim; Hilt, Oliver

Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration 关于单片集成的gan-on-aln/SiC晶体管的实验研究

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-10-01

PREAI

Geng, Xiaomeng; Wieczorek, Nick; Wolf, Mihaela; Kuring, Carsten; Brunner, Frank; Wuerfl, Joachim; Hilt, Oliver; Dieckerhoff, Sibylle

Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

APPLIED PHYSICS LETTERS

IF3.6

2024-08-16

OAAI

Wuerfl, Joachim; Palacios, Tomas; Xing, Huili Grace; Hao, Yue; Schubert, Mathias

Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2023-09-07

OAAI

Fregolent, Manuel; Brusaterra, Enrico; De Santi, Carlo; Tetzner, Kornelius; Wurfl, Joachim; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate 集成在高压AlN陶瓷衬底上的GaN基多芯片半桥功率模块

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2022-10-01

PREAI

Kuring, Carsten; Wolf, Mihaela; Geng, Xiaomeng; Hilt, Oliver; Bocker, Jan; Wurfl, Joachim; Dieckerhoff, Sibylle

Refractory metal-based ohmic contacts on β-Ga2O3 using TiW

APL MATERIALS

IF4.5

2022-07-12

OAAI

Tetzner, Kornelius; Schewski, Robert; Popp, Andreas; Bin Anooz, Saud; Chou, Ta-Shun; Ostermay, Ina; Kirmse, Holm; Wuerfl, Joachim

Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling

APPLIED PHYSICS LETTERS

IF3.6

2022-04-18

PREAI

Fregolent, Manuel; Brusaterra, Enrico; De Santi, Carlo; Tetzner, Kornelius; Wuerfl, Joachim; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes

APPLIED PHYSICS LETTERS

IF3.6

2022-03-18

OAAI

Tetzner, Kornelius; Egbo, Kingsley; Klupsch, Michael; Unger, Ralph-Stephan; Popp, Andreas; Chou, Ta-Shun; Bin Anooz, Saud; Galazka, Zbigniew; Trampert, Achim; Bierwagen, Oliver; Wuerfl, Joachim

Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications

IEEE ACCESS

IF3.6

2022-01-01

OAAI

Tsao, Yi-Fan; Hsu, Heng-Shou; Wurfl, Joachim; Hsu, Heng-Tung

Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

APPLIED PHYSICS LETTERS

IF3.6

2018-10-25

PREAI

Tetzner, Kornelius; Thies, Andreas; Treidel, Eldad Bahat; Brunner, Frank; Wagner, Guenter; Wuerfl, Joachim

Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

IF4.5

2016-11-01

PREAI

Badawi, Nasser; Hilt, Oliver; Bahat-Treidel, Eldad; Boecker, Jan; Wuerfl, Joachim; Dieckerhoff, Sibylle

High-voltage normally OFF GaN power transistors on SiC and Si substrates

MRS BULLETIN

IF4.9

2015-05-08

PREAI

Hilt, Oliver; Bahat-Treidel, Eldad; Knauer, Arne; Brunner, Frank; Zhytnytska, Rimma; Wuerfl, Joachim

Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC

APPLIED SURFACE SCIENCE

IF6.9

2007-07-01

PREAI

Wernicke, Tim; Krueger, Olaf; Herms, Martin; Wuerfl, Joachim; Neumann, Wolfgang; Behm, Thomas; Irmer, Gert; Traenkle, Guenther

Electrical properties of PdGe ohmic contacts to GaAs/AlxGa1-xAs heterostructures at liquid helium temperature

APPLIED PHYSICS LETTERS

IF3.6

1998-06-01

PREAI

Morozov, SV; Dubrovskii, YV; Abrosimova, VN; Wurfl, J

Simple method for examining sulphur passivation of facets in InGaAs-AlGaAs (lambda=0.98 mu m) laser diodes

APPLIED PHYSICS LETTERS

IF3.6

1996-04-29

PREAI

Beister, G; Maege, J; Gutsche, D; Erbert, G; Sebastian, J; Vogel, K; Weyers, M; Wurfl, J; Daga, OP

研究方向