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科言猫学术研究的AI总结
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B

Bernd Thomas

bosch

15H指数
81论文数
929被引数
收录论文 3
发表时间
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Defect reduction in SiC epilayers by different substrate cleaning methods
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2022-03-01
err9
PREAI
errBaierhofer, D.; Thomas, B.; Staiger, F.; Marchetti, B.; Foerster, C.; Erlbacher, T.
err分享
err收藏
Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-02-07
err12
PREAI
errPintilie, I.; Grossner, U.; Svensson, B. G.; Irmscher, K.; Thomas, B.
err分享
err收藏
Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers:: Evidence for nitrogen participation
errAPPLIED PHYSICS LETTERS
IF3.6
err2002-12-16
err81
errOAAI
errPintilie, I; Pintilie, L; Irmscher, K; Thomas, B
err分享
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研究方向

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合作学者
合作期刊
L
L. Pintilie
H 指数: 43 · 论文数: 277
B
B. G. Svensson
H 指数: 43 · 论文数: 393
K
K. Irmscher
H 指数: 40 · 论文数: 180
I
Ioana Pintilie
H 指数: 36 · 论文数: 254
U
Ulrike Großner
H 指数: 26 · 论文数: 252
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