P. Majhi - Publications, H-index & Citations

P. Majhi

samsung

25H指数

153论文数

2.1K被引数

收录论文 18

发表时间

Contact materials for nanoelectronics

MRS BULLETIN

IF4.9

2011-02-18

OAAI

Alshareef, H. N.; Quevedo-Lopez, M. A.; Majhi, P.

Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism

APPLIED PHYSICS LETTERS

IF3.6

2009-12-02

PREAI

Coss, B. E.; Loh, W. -Y.; Wallace, R. M.; Kim, J.; Majhi, P.; Jammy, R.

Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2008-11-14

PREAI

Na, H. J.; Lee, J. C.; Heh, D.; Sivasubramani, P.; Kirsch, P. D.; Oh, J. W.; Majhi, P.; Rivillon, S.; Chabal, Y. J.; Lee, B. H.; Choi, R.

Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As

APPLIED PHYSICS LETTERS

IF3.6

2008-11-04

OAAI

Kobayashi, M.; Chen, P. T.; Sun, Y.; Goel, N.; Majhi, P.; Garner, M.; Tsai, W.; Pianetta, P.; Nishi, Y.

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm

APPLIED PHYSICS LETTERS

IF3.6

2008-06-02

PREAI

Koveshnikov, S.; Goel, N.; Majhi, P.; Wen, H.; Santos, M. B.; Oktyabrsky, S.; Tokranov, V.; Kambhampati, R.; Moore, R.; Zhu, F.; Lee, J.; Tsai, W.

Internal photoemission spectroscopy of [TaN/TaSiN] and [TaN/TaCN] metal stacks on SiO2 and [HfO2/SiO2] dielectric stack

APPLIED PHYSICS LETTERS

IF3.6

2008-03-06

PREAI

Nguyen, N. V.; Xiong, H. D.; Suehle, J. S.; Kirillov, O. A.; Vogel, E. M.; Majhi, P.; Wen, H. -C.

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

APPLIED PHYSICS LETTERS

IF3.6

2008-03-04

193

PREAI

Kirsch, P. D.; Sivasubramani, P.; Huang, J.; Young, C. D.; Quevedo-Lopez, M. A.; Wen, H. C.; Alshareef, H.; Choi, K.; Park, C. S.; Freeman, K.; Hussain, M. M.; Bersuker, G.; Harris, H. R.; Majhi, P.; Choi, R.; Lysaght, P.; Lee, B. H.; Tseng, H. -H.; Jammy, R.; Boescke, T. S.; Lichtenwalner, D. J.; Jur, J. S.; Kingon, A. I.

High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2007-08-29

PREAI

Goel, N.; Majhi, P.; Tsai, W.; Warusawithana, M.; Schlom, D. G.; Santos, M. B.; Harris, J. S.; Nishi, Y.

Work function engineering using lanthanum oxide interfacial layers

APPLIED PHYSICS LETTERS

IF3.6

2006-12-04

104

PREAI

Alshareef, H. N.; Quevedo-Lopez, M.; Wen, H. C.; Harris, R.; Kirsch, P.; Majhi, P.; Lee, B. H.; Jammy, R.; Lichtenwalner, D. J.; Jur, J. S.; Kingon, A. I.

InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

APPLIED PHYSICS LETTERS

IF3.6

2006-10-20

PREAI

Goel, N.; Majhi, P.; Chui, C. O.; Tsai, W.; Choi, D.; Harris, J. S.

Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO2 for the advanced gate stack

APPLIED PHYSICS LETTERS

IF3.6

2006-10-04

PREAI

Chang, K. -S.; Green, M. L.; Suehle, J.; Vogel, E. M.; Xiong, H.; Hattrick-Simpers, J.; Takeuchi, I.; Famodu, O.; Ohmori, K.; Ahmet, P.; Chikyow, T.; Majhi, P.; Lee, B. -H.; Gardner, M.

Effective work function modification of atomic-layer-deposited-TaN film by capping layer 覆盖层对原子层沉积TaN薄膜的有效功函数修饰

APPLIED PHYSICS LETTERS

IF3.6

2006-07-21

PREAI

Choi, K.; Alshareef, H. N.; Wen, H. C.; Harris, H.; Luan, H.; Senzaki, Y.; Lysaght, P.; Majhi, P.; Lee, B. H.

Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

APPLIED PHYSICS LETTERS

IF3.6

2006-04-07

PREAI

Luan, H; Alshareef, HN; Harris, HR; Wen, HC; Choi, K; Senzaki, Y; Majhi, P; Lee, BH

Metal gate work function engineering using AlNx interfacial layers

APPLIED PHYSICS LETTERS

IF3.6

2006-03-16

PREAI

Alshareef, HN; Luan, HF; Choi, K; Harris, HR; Wen, HC; Quevedo-Lopez, MA; Majhi, P; Lee, BH

Composition dependence of the work function of Ta1-xAlxNy metal gates - art. no. 072108

APPLIED PHYSICS LETTERS

IF3.6

2006-02-16

PREAI

Alshareef, HN; Choi, K; Wen, HC; Luan, H; Harris, H; Senzaki, Y; Majhi, P; Lee, BH; Jammy, R; Aguirre-Tostado, S; Gnade, BE; Wallace, RM

Evaluation of tantalum silicon alloy systems as gate electrodes

APPLIED PHYSICS LETTERS

IF3.6

2005-11-18

PREAI

Luan, H; Alshareef, HN; Lysaght, PS; Harris, HR; Wen, HC; Choi, K; Senzaki, Y; Majhi, P; Lee, BH

Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes -: art. no. 082903

APPLIED PHYSICS LETTERS

IF3.6

2005-08-15

PREAI

Lysaght, PS; Foran, B; Bersuker, G; Peterson, JJ; Young, CD; Majhi, P; Lee, BH; Huff, HR

Modulation of the work function of silicon gate electrode using thin TaN interlayers

APPLIED PHYSICS LETTERS

IF3.6

2005-07-27

PREAI

Alshareef, HN; Wen, HC; Harris, HR; Choi, K; Luan, HF; Lysaght, P; Majhi, P; Lee, BH; El-Bouanani, M; Ukride, V

研究方向