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R

R. J. Shul

united states department of energy (doe)

43H指数
396论文数
8.5K被引数
收录论文 32
发表时间
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Nonselective, material-independent, precision plasma delayering of metals and dielectrics非选择性、与材料无关的金属和介电层高精度等离子体减薄
errJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
IF2.1
err2025-12-01
err0
PREAI
errIannello, Joseph; Miroshnik, Leonid; Shima, Darryl; Benavidez, Angelica; Han, Sang M.; Stevens, Tyler Eugene; Duree, Jessica; Shul, Randy; Nakakura, Craig Y.
err分享
err收藏
Wet chemical etching of AlN and InAlN in KOH solutions
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-07
err47
PREAI
errVartuli, CB; Pearton, SJ; Lee, JW; Abernathy, CR; Mackenzie, JD; Zolper, JC; Shul, RJ; Ren, F
err分享
err收藏
Selective dry etching of III-V nitrides in Cl-2/Ar, CH4/H-2/Ar, ICI/Ar, and IBr/Ar
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-07
err15
PREAI
errVartuli, CB; Pearton, SJ; MacKenzie, JD; Abernathy, CR; Shul, RJ
err分享
err收藏
Comparison of dry etching techniques for III-V semiconductors in CH4/H-2/Ar plasmas
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-07
err13
PREAI
errPearton, SJ; Lee, JW; Lambers, ES; Abernathy, CR; Ren, F; Hobson, WS; Shul, RJ
err分享
err收藏
High-density etching of group III nitride ternary films
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-07
err7
PREAI
errShul, RJ; Howard, AJ; Pearton, SJ; Abernathy, CR; Vartuli, CB
err分享
err收藏
High density plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err3
PREAI
errLee, JW; Pearton, SJ; Ren, F; Kopf, RF; Kuo, JM; Shul, RJ; Constantine, C; Johnson, D
err分享
err收藏
Comparison of F2-based gases for high-rate dry etching of Si
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err25
errOAAI
errHays, DC; Jung, KB; Hahn, YB; Lambers, ES; Pearton, SJ; Donahue, J; Johnson, D; Shul, RJ
err分享
err收藏
Electron cyclotron resonance plasma etching of AlGaN in Cl-2/Ar and BCl3/Ar plasmas
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err6
PREAI
errVartuli, CB; Pearton, SJ; Lee, JW; Polyakov, AY; Shin, M; Greve, DW; Skronowski, M; Shul, RJ
err分享
err收藏
Inductively coupled plasma etch damage in GaAs and InP Schottky diodes
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err9
PREAI
errLee, JW; Abernathy, CR; Pearton, SJ; Ren, F; Hobson, WS; Shul, RJ; Constantine, C; Barratt, C
err分享
err收藏
Inductively coupled plasma etching of III-V nitrides in CH4/H-2/Ar and CH4/H-2/N-2 chemistries
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err24
PREAI
errVartuli, CB; Pearton, SJ; Lee, JW; MacKenzie, JD; Abernathy, CR; Shul, RJ; Constantine, C; Barratt, C
err分享
err收藏
Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2002-03-04
err182
PREAI
errLuo, B; Johnson, JW; Kim, J; Mehandru, RM; Ren, F; Gila, BP; Onstine, AH; Abernathy, CR; Pearton, SJ; Baca, AG; Briggs, RD; Shul, RJ; Monier, C; Han, J
err分享
err收藏
Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-05-15
err24
PREAI
errZhang, AP; Dang, GT; Ren, F; Han, J; Baca, AG; Shul, RJ; Cho, H; Monier, C; Cao, XA; Abernathy, CR; Pearton, SJ
err分享
err收藏
Cl2/Ar high-density-plasma damage in GaN Schottky diodes
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2000-01-01
err13
PREAI
errZhang, AP; Dang, G; Ren, F; Cao, XA; Cho, H; Lambers, ES; Pearton, SJ; Shul, RJ; Zhang, L; Baca, AG; Hickman, R; Van Hove, JM
err分享
err收藏
Electrical effects of plasma damage in p-GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-10-25
err226
PREAI
errCao, XA; Pearton, SJ; Zhang, AP; Dang, GT; Ren, F; Shul, RJ; Zhang, L; Hickman, R; Van Hove, JM
err分享
err收藏
Depth and thermal stability of dry etch damage in GaN Schottky diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-07-12
err140
errOAAI
errCao, XA; Cho, H; Pearton, SJ; Dang, GT; Zhang, AP; Ren, F; Shul, RJ; Zhang, L; Hickman, R; Van Hove, JM
err分享
err收藏
Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-05-03
err85
errOAAI
errHan, J; Baca, AG; Shul, RJ; Willison, CG; Zhang, L; Ren, F; Zhang, AP; Dang, GT; Donovan, SM; Cao, XA; Cho, H; Jung, KB; Abernathy, CR; Pearton, SJ; Wilson, RG
err分享
err收藏
Selective dry etching using inductively coupled plasmas Part II. InN GaN and InN AlN
errAPPLIED SURFACE SCIENCE
IF6.9
err1999-05-01
err15
PREAI
errHays, DC; Cho, H; Jung, KB; Hahn, YB; Abernathy, CR; Pearton, SJ; Ren, F; Hun, J; Shul, RJ
err分享
err收藏
Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors Part II.: InP, InSb, InGaP and InGaAs
errAPPLIED SURFACE SCIENCE
IF6.9
err1999-05-01
err28
PREAI
errHahn, YB; Hays, DC; Cho, H; Jung, KB; Abernathy, CR; Pearton, SJ; Shul, RJ
err分享
err收藏
Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors Part I.: GaAs and GaSb
errAPPLIED SURFACE SCIENCE
IF6.9
err1999-05-01
err23
PREAI
errHahn, YB; Hays, DC; Cho, H; Jung, KB; Abernathy, CR; Pearton, SJ; Shul, RJ
err分享
err收藏
Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries -: II.: InP, InGaAs, InGaAsP, InAs and AlInAsBCl3-based化学中iii-v半导体的感应耦合等离子体蚀刻-: II.: InP，InGaAs，InGaAsP，InAs和AlInAs
errAPPLIED SURFACE SCIENCE
IF6.9
err1999-04-01
err19
PREAI
errMaeda, T; Lee, JW; Shul, RJ; Han, J; Hong, J; Lambers, ES; Pearton, SJ; Abernathy, CR; Hobson, WS
err分享
err收藏

研究方向

暂无研究方向
合作学者
合作期刊
S
S. J. Pearton
H 指数: 115 · 论文数: 2.9K
F
F. Ren
H 指数: 94 · 论文数: 2.0K
Y
Yoon‐Bong Hahn
H 指数: 69 · 论文数: 375
J
Jung Han
H 指数: 61 · 论文数: 506
C
C. R. Abernathy
H 指数: 58 · 论文数: 711
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