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W

W. Wierzchowski

Institute of Electronic Materials Technology

16H指数
191论文数
1.1K被引数
收录论文 14
发表时间
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Strain profiles and defect structure in 6H-SiC crystals implanted with 2 MeV As+ ions注入2 MeV As离子的6H-SiC晶体中的应变分布和缺陷结构
errVACUUM
IF3.9
err2009-05-01
err4
PREAI
errWierzchowski, Wojciech; Wieteska, Krzysztof; Graeff, Walter; Turos, Andrzej; Groetzschel, Rainer; Stonert, Anna; Ratajczak, Renata
err分享
err收藏
Structural characterization of InxGa1-xAs/Inp layers under different stresses
errAPPLIED SURFACE SCIENCE
IF6.9
err2006-10-01
err1
errOAAI
errBak-Misiuk, J.; Orlinska, K.; Kaniewski, J.; Shalimov, A.; Lusakowska, E.; Misiuk, A.; Muszalski, J.; Wierchowski, W.; Wieteska, K.; Graeff, W.
err分享
err收藏
Synchrotron white beam topography studies of SrLaGaO4 crystals
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2005-09-01
err8
PREAI
errWieteska, K; Wierzchowski, W; Graeff, W; Lefeld-Sosnowska, A; Pajczkowska, A; Wierzbicka, E; Malinowska, A
err分享
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Investigation of the defects distribution along the growth direction in GdCOB crystals by synchrotron and conventional X-ray topography
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2005-09-01
err6
PREAI
errWierzchowski, W; Wieteska, K; Graeff, W; Wierbicka, E; Lefeld-Sosnowska, M; Klos, A
err分享
err收藏
X-ray diffraction studies of GaAs implanted with 1.5 MeV Se+ ions
errVACUUM
IF3.9
err2005-05-01
err8
PREAI
errWierzchowski, W; Wieteska, K; Graeff, W; Turos, A; Grötzschel, R
err分享
err收藏
Conventional and synchrotron radiation back reflection topography of GdCa4O(BO3)3 crystals
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2004-11-01
err6
PREAI
errLefeld-Sosnowska, M; Olszynska, E; Wierzchowski, W; Wieteska, K; Graeff, W; Pajaczkowska, A; Klos, A
err分享
err收藏
Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2004-01-01
err5
PREAI
errBak-Misuk, J; Misiuk, A; Paszkowicz, W; Shalimov, A; Härtwig, J; Bryja, L; Domagala, JZ; Trela, J; Wierzchowski, W; Wieteska, K; Ratajczak, J; Graeff, W
err分享
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Reciprocal space mapping of implanted AIIIBV semiconductor compounds
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2004-01-01
err1
PREAI
errWieteska, K; Wierzchowski, W; Graeff, W; Kuri, G; Misiuk, A; Turos, A; Gawlik, G
err分享
err收藏
X-ray studies of AlxGA1-xAs implanted with 1.5 MeV as ions
errVACUUM
IF3.9
err2003-03-01
err1
PREAI
errWierzchowski, W; Wieteska, K; Graeff, W; Turos, A; Grötzschel, R
err分享
err收藏
Synchrotron studies of implanted InxGa1-xAs
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2001-10-01
err0
PREAI
errWieteska, K; Wierzchowski, W; Graeff, W; Turos, A; Grötzschel, R
err分享
err收藏
Synchrotron investigation of strain profiles in the implanted semiconductors
errVACUUM
IF3.9
err2001-08-01
err5
PREAI
errWierzchowski, W; Wieteska, K; Turos, A; Graeff, W; Gawlik, G
err分享
err收藏
Application of Bragg-case section topography for strain profile determination in AIIIBV implanted semiconductors
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2001-05-03
err6
PREAI
errWieteska, K; Wierzchowski, W; Graeff, W; Turos, A
err分享
err收藏
Interference fringes in plane-wave topography of AlxCa1-xAs epitaxial layers implanted with Se ions
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err1999-05-01
err3
PREAI
errWierzchowski, W; Wieteska, K; Graeff, W; Turos, A
err分享
err收藏
DTA investigation of the retrogression and re-ageing in some AlZnMgCu alloys
errTHERMOCHIMICA ACTA
IF3.5
err1997-10-01
err21
PREAI
errGazda, A; Warmuzek, M; Wierzchowski, W
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
J
J. Härtwig
H 指数: 36 · 论文数: 155
W
W. Paszkowicz
H 指数: 34 · 论文数: 373
J
J. Z. Domagała
H 指数: 28 · 论文数: 326
A
A. Turos
H 指数: 28 · 论文数: 247
W
W. Graeff
H 指数: 25 · 论文数: 163
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