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R. B. Laibowitz

ibm usa

45H指数
163论文数
7.9K被引数
收录论文 6
发表时间
Charge trapping at the low-k dielectric-silicon interface probed by the conductance and capacitance techniques
err2008-09-22
err50
errOAAI
errAtkin, J. M.; Cartier, E.; Shaw, T. M.; Laibowitz, R. B.; Heinz, T. F.
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Fabrication of patterned single-crystal SrTiO3 thin films by ion slicing and anodic bonding
err2006-09-19
err9
PREAI
errLee, Yoo Seung; Djukic, Djordje; Roth, Ryan M.; Laibowitz, Robert; Izuhara, Tomoyuki; Osgood, Richard M., Jr.; Bakhru, Sasha; Bakhru, Hassaram; Si, Weidong; Welch, David
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The effect of stress on the dielectric properties of barium strontium titanate thin films
err1999-10-04
err328
PREAI
errShaw, TM; Suo, Z; Huang, M; Liniger, E; Laibowitz, RB; Baniecki, JD
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Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors
err1999-06-01
err47
errOAAI
errBaniecki, JD; Laibowitz, RB; Shaw, TM; Saenger, KL; Duncombe, PR; Cabral, C; Kotecki, DE; Shen, H; Lian, J; Ma, QY
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Compensation doping of Ba0.7Sr0.3TiO3 thin films
err1998-09-28
err57
PREAI
errCopel, M; Baniecki, JD; Duncombe, PR; Kotecki, D; Laibowitz, R; Neumayer, DA; Shaw, TM
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Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz
err1998-01-26
err146
PREAI
errBaniecki, JD; Laibowitz, RB; Shaw, TM; Duncombe, PR; Neumayer, DA; Kotecki, DE; Shen, H; Ma, QY
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