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T. Höchbauer

机构信息待补充

16H指数
48论文数
961被引数
收录论文 10
发表时间
Role of strain in the blistering of hydrogen-implanted silicon
err2006-09-05
err22
errOAAI
errLee, Jung-Kun; Lin, Yuan; Jia, Q. X.; Hochbauer, Tobias; Jung, Hyun Suk; Shao, Lin; Misra, Amit; Nastasi, Michael
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Microwave-cut silicon layer transfer
err2005-11-22
err14
PREAI
errThompson, DC; Alford, TL; Mayer, JW; Hochbauer, T; Nastasi, M; Lau, SS; Theodore, ND; Henttinen, K; Suni, I; Chu, PK
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Nucleation and growth of platelets in hydrogen-ion-implanted silicon -: art. no. 154102
err2005-04-05
err83
errOAAI
errNastasi, M; Höchbauer, T; Lee, JK; Misra, A; Hirth, JP; Ridgway, M; Lafford, T
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Investigation of plasma hydrogenation and trapping mechanism for layer transfer -: art. no. 031904
err2005-01-07
err27
errOAAI
errChen, P; Chu, PK; Höchbauer, T; Lee, JK; Nastasi, M; Buca, D; Mantl, S; Loo, R; Caymax, M; Alford, T; Mayer, JW; Theodore, ND; Cai, M; Schmidt, B; Lau, SS
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Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer
err2004-11-22
err5
errOAAI
errChen, P; Chu, PK; Höchbauer, T; Nastasi, M; Buca, D; Mantl, S; Theodore, ND; Alford, TL; Mayer, JW; Loo, R; Caymax, M; Cai, M; Lau, SS
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Role of boron for defect evolution in hydrogen-implanted silicon
err2003-10-13
err15
PREAI
errLee, JK; Höchbauer, T; Averitt, RD; Nastasi, M
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