Susanne Hoffmann‐Eifert - Publications, H-index & Citations

Susanne Hoffmann‐Eifert

peter grünberg institute 7 (electronic materials)

38H指数

274论文数

5.3K被引数

收录论文 63

发表时间

Amorphous, Highly Conductive Pr_0.7Ca_0.3MnO₃ for Area-Dependent Resistive Switching AlO_x Bilayer Devices 非晶态、高导电性Pr_0.7Ca_0.3MnO₃用于面积依赖型阻变AlO_x双层器件

Advanced Electronic Materials

IF5.3

2026-09-05

OAAI

Max Buczek; Iliyas T. Dossayev; Clemens Wittberg; Yen-Po Liu; Kalle Goß; David N. Mueller; Zoe Moos; Zhenhao Liu; Karsten Bittkau; Mohammad Hassan Sultani; Stephan Menzel; Susanne Hoffmann-Eifert; Regina Dittmann

A Flexible and Energy-Efficient Compute-in-Memory Accelerator for Kolmogorov–Arnold Networks 一种灵活且能效高的用于Kolmogorov–Arnold Networks的计算内存储加速器

Advanced Intelligent Systems

IF6.1

2026-03-01

OAAI

Chirag Sudarshan; Oliver Artner; Paul-Philipp Manea; Sebastian Siegel; Susanne Hoffmann-Eifert; Regina Dittmann; John Paul Strachan

Compact Modeling of Volatile-Switching Electrochemical Metallization Memory Cells by Means of the Electromotive Force 通过电动势对易失性电化学金属化存储单元的紧凑建模

Advanced Intelligent Systems

IF6.1

2025-10-26

OAAI

Rana Walied Ahmad; Solomon Amsalu Chekol; Julius Rasbach; Susanne Hoffmann-Eifert; Stephan Menzel

Water-assisted multistep MOCVD for wafer-scale layer-by-layer growth of WSe2 水辅助的多步MOCVD技术用于晶圆级WSe2的逐层生长

MRS Bulletin

IF4.9

2025-08-28

OAAI

Yibing Wang; Songyao Tang; Zhaodong Wang; Yingfang Ding; Hleb Fiadziushkin; Amir Ghiami; Susanne Hoffmann-Eifert; Michael Heuken; Andrei Vescan; Holger Kalisch

Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration

IEEE ACCESS

IF3.6

2025-01-01

OAAI

Liu, Xiaohua; Chen, Yang; Kopperberg, Nils; Solfronk, Oliver; Hoffmann-Eifert, Susanne; Menzel, Stephan; Waser, Rainer; Wiefels, Stefan

Unravelling chemical etchant influences during assisted wet-transfer to obtain high quality MoS2 atomic layers

APPLIED SURFACE SCIENCE

IF6.9

2024-10-01

OAAI

Singh, Animesh Pratap; Xu, Han; Ghiami, Amir; Tang, Songyao; Wang, Zhaodong; Kalisch, Holger; Hoffmann-Eifert, Susanne; Daus, Alwin; Ingebrandt, Sven; Vescan, Andrei; Pachauri, Vivek

A Physical Description of the Variability in Single-ReRAM Devices and Hardware-Based Neuronal Networks

ADVANCED INTELLIGENT SYSTEMS

IF6.1

2023-08-30

OAAI

Funck, Carsten; Wiefels, Stefan; Bengel, Christopher; Schnieders, Kristoffer; Hoffmann-Eifert, Susanne; Dittmann, Regina; Menzel, Stephan

The MoS2-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS2 Band Structure

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2023-05-30

OAAI

Woerdenweber, Henrik; Grundmann, Annika; Wang, Zhaodong; Hoffmann-Eifert, Susanne; Kalisch, Holger; Vescan, Andrei; Heuken, Michael; Waser, Rainer; Karthaeuser, Silvia

SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials

MICROMACHINES

IF3

2023-02-27

OAAI

Chekol, Solomon Amsalu; Nacke, Richard; Aussen, Stephan; Hoffmann-Eifert, Susanne

Migration-Enhanced Metal-Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS2 and WSe2 Monolayers

CRYSTAL GROWTH & DESIGN

IF3.4

2023-01-24

OAAI

Tang, Songyao; Grundmann, Annika; Fiadziushkin, Hleb; Wang, Zhaodong; Hoffmann-Eifert, Susanne; Ghiami, Amir; Debald, Arne; Heuken, Michael; Vescan, Andrei; Kalisch, Holger

Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

SCIENTIFIC REPORTS

IF3.9

2022-11-05

OAAI

Woerdenweber, Henrik; Karthaeuser, Silvia; Grundmann, Annika; Wang, Zhaodong; Aussen, Stephan; Kalisch, Holger; Vescan, Andrei; Heuken, Michael; Waser, Rainer; Hoffmann-Eifert, Susanne

Effect of electron conduction on the read noise characteristics in ReRAM devices

APL MATERIALS

IF4.5

2022-10-31

OAAI

Schnieders, K.; Funck, C.; Cueppers, F.; Aussen, S.; Kempen, T.; Sarantopoulos, A.; Dittmann, R.; Menzel, S.; Rana, V; Hoffmann-Eifert, S.; Wiefels, S.

Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag-Based Diffusive Memristors 阈值动力学对Ag基扩散忆阻器细丝弛豫行为的影响

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-12-22

PREAI

Chekol, Solomon Amsalu; Menzel, Stephan; Ahmad, Rana Walied; Waser, Rainer; Hoffmann-Eifert, Susanne

Intrinsic RESET Speed Limit of Valence Change Memories

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-12-13

OAAI

von Witzleben, Moritz; Wiefels, Stefan; Kindsmueller, Andreas; Stasner, Pascal; Berg, Fenja; Cueppers, Felix; Hoffmann-Eifert, Susanne; Waser, Rainer; Menzel, Stephan; Boettger, Ulrich

Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns

FRONTIERS IN NEUROSCIENCE

IF3.2

2021-06-07

OAAI

Bengel, Christopher; Cuppers, Felix; Payvand, Melika; Dittmann, Regina; Waser, Rainer; Hoffmann-Eifert, Susanne; Menzel, Stephan

Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2020-12-01

OAAI

Bengel, Christopher; Siemon, Anne; Cuppers, Felix; Hoffmann-Eifert, Susanne; Hardtdegen, Alexander; von Witzleben, Moritz; Hellmich, Lena; Waser, Rainer; Menzel, Stephan

Cation diffusion in polycrystalline thin films of monoclinic HfO2 deposited by atomic layer deposition

APL MATERIALS

IF4.5

2020-08-04

OAAI

Mueller, Michael P.; Pingen, Katrin; Hardtdegen, Alexander; Aussen, Stephan; Kindsmueller, Andreas; Hoffmann-Eifert, Susanne; De Souza, Roger A.

Comprehensive model for the electronic transport in Pt/SrTiO3 analog memristive devices

PHYSICAL REVIEW B

IF3.7

2020-07-21

PREAI

Funck, Carsten; Baeumer, Christoph; Wiefels, Stefan; Hennen, Tyler; Waser, Rainer; Hoffmann-Eifert, Susanne; Dittmann, Regina; Menzel, Stephan

Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications

NANOSCALE

IF5.1

2020-01-01

PREAI

Dippel, Ann-Christin; Gutowski, Olof; Klemeyer, Lars; Boettger, Ulrich; Berg, Fenja; Schneller, Theodor; Hardtdegen, Alexander; Aussen, Stephan; Hoffmann-Eifert, Susanne; Zimmermann, Martin V.

Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior

APL MATERIALS

IF4.5

2019-09-10

100

OAAI

Cueppers, F.; Menzel, S.; Bengel, C.; Hardtdegen, A.; von Witzleben, M.; Boettger, U.; Waser, R.; Hoffmann-Eifert, S.

研究方向