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G

Giovanni Esteves

United States Department of Energy

H指数:22

被引数:1,357

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Material-level characterization of the intrinsic mechanical quality factor of Al1-xScxN

材料尺度下Al1-xScxN固有机械品质因子的表征

Acta Materialia

IF9.3

2026-08-010

PRE

Low-Field Ferroelectricity in 10-nm AlBScN Thin Films

10-nm AlBScN薄膜中的低场铁电性

IEEE Electron Device Letters

IF4.5

2026-03-200

PRE

Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10⁴

IEEE Electron Device Letters

IF4.5

2025-11-250

PRE

Increased thermal conductivity and decreased electron-phonon coupling factor of the aluminum scandium intermetallic phase (Al3Sc) compared to solid solutions

APPLIED PHYSICS LETTERS

IF3.6

2024-05-152

PRE

Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

APPLIED PHYSICS LETTERS

IF3.6

2024-02-208

OA

Casamento, Joseph; Baksa, Steven M.; Behrendt, Drew; Calderon, Sebastian; Goodling, Devin; Hayden, John; He, Fan; Jacques, Leonard; Lee, Seung Hoon; Smith, Walter; Suceava, Albert; Tran, Quyen; Zheng, Xiaojun; Zu, Rui; Beechem, Thomas; Dabo, Ismaila; Dickey, Elizabeth C.; Esteves, Giovanni; Gopalan, Venkatraman; Henry, Michael David; Ihlefeld, Jon F.; Jackson, Thomas N.; Kalinin, Sergei V.; Kelley, Kyle P.; Liu, Yongtao; Rappe, Andrew M.; Redwing, Joan; Trolier-McKinstry, Susan; Maria, Jon-Paul

Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

IF3.7

2024-02-012

OA

Ferroelectric behavior of sputter deposited Al0.72Sc0.28N approaching 5 nm thickness

APPLIED PHYSICS LETTERS

IF3.6

2023-06-0135

OA

Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution

IF4.3

2023-01-097

OAAI

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

IF9.1

2022-09-1939

OAAI

Vertical and Lateral Etch Survey of Ferroelectric AlN/Al1-xScxN in Aqueous KOH Solutions

KOH水溶液中铁电AlN/Al1-xScxN的垂直和横向蚀刻调查

IF3

2022-07-029

OAAI

Formation of Al3Sc in Al0.8Sc0.2 thin films

Al0.8Sc0.2薄膜中Al3Sc的形成

IF3.9

2022-06-015

OAAI

Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf1-xZrxO2 thin films (vol 118, 102901, 2021)

APPLIED PHYSICS LETTERS

IF3.6

2021-09-222

PRE

Al0.68Sc0.32N Lamb wave resonators with electromechanical coupling coefficients near 10.28%

APPLIED PHYSICS LETTERS

IF3.6

2021-04-2655

OAAI

Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-04-1466

OAAI

Metal Nitride Electrode Stress and Chemistry Effects on Phase and Polarization Response in Ferroelectric Hf0.5Zr0.5O2 Thin Films

ADVANCED MATERIALS INTERFACES

IF4.4

2021-03-2327

OAAI

Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf1-xZrxO2 thin films

APPLIED PHYSICS LETTERS

IF3.6

2021-03-0831

OAAI

Residual Stress and Ferroelastic Domain Reorientation in Declamped {001} Pb(Zr0.3Ti0.7)O3 Films

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

IF3.7

2021-02-0110

OAAI

Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films

铁电铪锆氧化物薄膜中相交换驱动的唤醒和乏力

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-05-15112

PREAI

Multiscale field-induced structure of (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 ceramics from combined techniques

ACTA MATERIALIA

IF9.3

2018-08-0123

OAAI

Thickness dependent response of domain wall motion in declamped {001} Pb(Zr0.3Ti0.7)O3 thin films

ACTA MATERIALIA

IF9.3

2018-06-0127

PREAI