Mathias Rommel

Fraunhofer Institute for Integrated Systems and Device Technology IISB

H指数:22

被引数:1,807

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Complex Refractive Index Determination Via Microspectroscopy Through Magnifying Optics: Challenges and Opportunities

通过放大光学显微镜光谱法确定复折射率：挑战与机遇

Small Methods

IF9.1

2026-10-300

Impact of Surface Treatment on Noise in PL Measurements of Silicon Vacancies in 4H-SiC Lateral PIN-Diodes

表面处理对4H-SiC横向PIN二极管中硅空位PL测量的噪声影响

Nano Letters

IF9.1

2026-05-120

PRE

Probing crystal axis orientation of birefringent materials via polarized microspectroscopy and anisotropic optical modeling

通过偏振显微光谱法和各向异性光学建模探测双折射材料的晶轴取向

journal of physics: photonics

IF0

2026-01-080

A 4H-SiC CTAT Temperature Sensor Operating Between 14 and 481 K

4H-SiC CTAT温度传感器在14至481 K温度范围内的应用

IEEE Sensors Letters

IF2.2

2026-01-010

PRE

Performance Investigation of 4H-SiC PIN Photodiodes With Dual-Emitter Designs for Enhanced UV-C Detection

4H-SiC PIN光电二极管在双发射极设计下对增强UVC检测的性能研究

IEEE SENSORS LETTERS

IF2.2

2025-10-010

PRE

Modeling the partially detected backside reflectance of transparent substrates in reflectance microspectroscopy

透明衬底部分探测背面反射率在反射率显微光谱法中的建模

Micron

IF2.2

2025-07-190

PRE

Spectro-Spatial Unmixing in Optical Microspectroscopy for Thickness Determination of Layered Materials

ADVANCED OPTICAL MATERIALS

IF7.2

2024-12-290

OAAI

An analog to digital converter in a SiC CMOS technology for high-temperature applications

APPLIED PHYSICS LETTERS

IF3.6

2024-04-094

Defects distribution and evolution in selected-area helium ion implanted 4H-SiC

CERAMICS INTERNATIONAL

IF5.6

2024-03-012

PRE

A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K

SENSORS

IF3.5

2023-12-065

OAAI

Correlating Optical Microspectroscopy with 4x4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials

SMALL METHODS

IF9.1

2023-07-181

Intragranular thermal fatigue of Cu thin films: Near-grain boundary hardening, strain localization and voiding

ACTA MATERIALIA

IF9.3

2023-07-012

On the interpretation of confocal spectral depth profiling of color center and carrier concentration by photoluminescence and Raman of implanted 4H-SiC

CERAMICS INTERNATIONAL

IF5.6

2023-05-012

PRE

Unconventional conductivity increase in multilayer black phosphorus

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2023-03-2911

Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy(vol 10, 13676 , 2020)

SCIENTIFIC REPORTS

IF3.9

2023-01-250

OAAI

Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

MATERIALS

IF3.2

2021-12-221

OAAI

Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing

CERAMICS INTERNATIONAL

IF5.6

2021-09-0117

PREAI

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-0125

PREAI

Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser

NANOTECHNOLOGY AND PRECISION ENGINEERING

IF2.7

2020-12-1319

Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide

碳化硅中碳空位缺陷性质的密度泛函理论计算

NANOTECHNOLOGY AND PRECISION ENGINEERING

IF2.7

2020-12-1115

Mathias Rommel

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