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Nadine Collaert

imec, leuven, belgium

46H指数
796论文数
1.1W被引数
收录论文 39
发表时间
AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates
err2024-08-15
err0
errOAAI
errCardinael, Pieter; Yadav, Sachin; Hahn, Herwig; Zhao, Ming; Banerjee, Sourish; Esfeh, Babak Kazemi; Mauder, Christof; O'Sullivan, Barry; Peralagu, Uthayasankaran; Vohra, Anurag; Langer, Robert; Collaert, Nadine; Parvais, Bertrand; Raskin, Jean-Pierre
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Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers针对RF/mm波功率放大器的肖特基栅极GaN-on-Silicon HEMT结构的偏置温度应力期间的电荷俘获和发射
err2024-07-24
err0
errOAAI
errO'Sullivan, Barry; Rathi, Aarti; Alian, Alireza; Yadav, Sachin; Yu, Hao; Sibaja-Hernandez, Arturo; Peralagu, Uthayasankaran; Parvais, Bertrand; Chasin, Adrian; Collaert, Nadine
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Thermal budget increased alloy disorder scattering of 2DEG in III-N heterostructures
err2022-05-26
err5
PREAI
errYu, Hao; Parvais, Bertrand; Zhao, Ming; Rodriguez, Raul; Peralagu, Uthayasankaran; Alian, Alireza; Collaert, Nadine
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Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate
err2021-09-29
err5
errOAAI
errMols, Yves; Vais, Abhitosh; Yadav, Sachin; Witters, Liesbeth; Vondkar, Komal; Alcotte, Reynald; Baryshnikova, Marina; Boccardi, Guillaume; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine; Langer, Robert; Kunert, Bernardette
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Application of an Sb Surfactant in InGaAs Nano-ridge Engineering on 300 mm Silicon Substrates
err2021-02-08
err8
PREAI
errKunert, Bernardette; Alcotte, Reynald; Mols, Yves; Baryshnikova, Marina; Waldron, Niamh; Collaert, Nadine; Langer, Robert
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Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates
err2020-08-31
err8
PREAI
errSyshchyk, O.; Hsu, B.; Yu, H.; Motsnyi, V.; Vais, A.; Kunert, B.; Mols, Y.; Alcotte, R.; Puybaret, R.; Waldron, N.; Soussan, P.; Boulenc, P.; Karve, G.; Simoen, E.; Collaert, N.; Puers, B.; Van Hoof, C.
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The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As
err2019-09-12
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PREAI
errHsu, Po-Chun (Brent); Simoen, Eddy; Merckling, Clement; Eneman, Geert; Mols, Yves; Han, Han; Alian, AliReza; Collaert, Nadine; Heyns, Marc
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A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications
err2019-02-06
err15
errOAAI
errLi, Yida; Alian, Alireza; Sivan, Maheswari; Huang, Li; Ang, Kah Wee; Lin, Dennis; Mocuta, Dan; Collaert, Nadine; Thean, Aaron V. -Y.
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Non-destructive characterization of extended crystalline defects in confined semiconductor device structures
err2018-01-01
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errOAAI
errSchulze, Andreas; Strakos, Libor; Vystavel, Tomas; Loo, Roger; Pacco, Antoine; Collaert, Nadine; Vandervorst, Wilfried; Caymax, Matty
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Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy
err2017-12-26
err16
PREAI
errLiu, Ziyang; Merckling, Clement; Rooyackers, Rita; Richard, Olivier; Bender, Hugo; Mols, Yves; Vila, Maria; Rubio-Zuazo, Juan; Castro, German R.; Collaert, Nadine; Thean, Aaron; Vandervorst, Wilfried; Heyns, Marc
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InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
err2016-12-14
err50
errOAAI
errAlian, A.; Mols, Y.; Bordallo, C. C. M.; Verreck, D.; Verhulst, A.; Vandooren, A.; Rooyackers, R.; Agopian, P. G. D.; Martino, J. A.; Thean, A.; Lin, D.; Mocuta, D.; Collaert, N.
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Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks
err2016-10-24
err10
PREAI
errYoshida, S.; Lin, D.; Vais, A.; Alian, A.; Franco, J.; El Kazzi, S.; Mols, Y.; Miyanami, Y.; Nakazawa, M.; Collaert, N.; Watanabe, H.; Thean, A.
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Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts
err2016-04-25
err34
PREAI
errYu, Hao; Schaekers, Marc; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron Voon-Yew; De Meyer, Kristin
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Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications
err2016-02-01
err0
PREAI
errRitzenthaler, R.; Schram, T.; Witters, L.; Mitard, J.; Spessot, A.; Caillat, C.; Hellings, G.; Eneman, G.; Aoulaiche, M.; Na, H. -J.; Son, Y.; Noh, K. B.; Fazan, P.; Lee, S. -G.; Collaert, N.; Mocuta, A.; Horiguchi, N.; Thean, A. V. -Y.
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Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements
err2015-08-17
err6
errOAAI
errSmets, Quentin; Verhulst, Anne S.; El Kazzi, Salim; Verreck, Devin; Richard, Olivier; Bender, Hugo; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Heyns, Marc M.
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Temperature dependence of frequency dispersion in III-V metal-oxide-semiconductor C-V and the capture/emission process of border traps
err2015-08-06
err24
PREAI
errVais, Abhitosh; Lin, Han-Chung; Dou, Chunmeng; Martens, Koen; Ivanov, Tsvetan; Xie, Qi; Tang, Fu; Givens, Michael; Maes, Jan; Collaert, Nadine; Raskin, Jean-Pierre; DeMeyer, Kristin; Thean, Aaron
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Quantitative Method to Determine Planar Defect Frequency in In As Nanowires by High Resolution X-ray Diffraction
err2015-07-07
err7
PREAI
errLiu, Ziyang; Merckling, Clement; Caymax, Matty; Rooyackers, Rita; Collaert, Nadine; Thean, Aaron; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc
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