未登录 AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates Cardinael, Pieter; Yadav, Sachin; Hahn, Herwig; Zhao, Ming; Banerjee, Sourish; Esfeh, Babak Kazemi; Mauder, Christof; O'Sullivan, Barry; Peralagu, Uthayasankaran; Vohra, Anurag; Langer, Robert; Collaert, Nadine; Parvais, Bertrand; Raskin, Jean-Pierre 分享 收藏
Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers 针对RF/mm波功率放大器的肖特基栅极GaN-on-Silicon HEMT结构的偏置温度应力期间的电荷俘获和发射 O'Sullivan, Barry; Rathi, Aarti; Alian, Alireza; Yadav, Sachin; Yu, Hao; Sibaja-Hernandez, Arturo; Peralagu, Uthayasankaran; Parvais, Bertrand; Chasin, Adrian; Collaert, Nadine 分享 收藏
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Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate Mols, Yves; Vais, Abhitosh; Yadav, Sachin; Witters, Liesbeth; Vondkar, Komal; Alcotte, Reynald; Baryshnikova, Marina; Boccardi, Guillaume; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine; Langer, Robert; Kunert, Bernardette 分享 收藏
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Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates Syshchyk, O.; Hsu, B.; Yu, H.; Motsnyi, V.; Vais, A.; Kunert, B.; Mols, Y.; Alcotte, R.; Puybaret, R.; Waldron, N.; Soussan, P.; Boulenc, P.; Karve, G.; Simoen, E.; Collaert, N.; Puers, B.; Van Hoof, C. 分享 收藏
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Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy Liu, Ziyang; Merckling, Clement; Rooyackers, Rita; Richard, Olivier; Bender, Hugo; Mols, Yves; Vila, Maria; Rubio-Zuazo, Juan; Castro, German R.; Collaert, Nadine; Thean, Aaron; Vandervorst, Wilfried; Heyns, Marc 分享 收藏
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InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature Alian, A.; Mols, Y.; Bordallo, C. C. M.; Verreck, D.; Verhulst, A.; Vandooren, A.; Rooyackers, R.; Agopian, P. G. D.; Martino, J. A.; Thean, A.; Lin, D.; Mocuta, D.; Collaert, N. 分享 收藏
Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks Yoshida, S.; Lin, D.; Vais, A.; Alian, A.; Franco, J.; El Kazzi, S.; Mols, Y.; Miyanami, Y.; Nakazawa, M.; Collaert, N.; Watanabe, H.; Thean, A. 分享 收藏
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Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications Ritzenthaler, R.; Schram, T.; Witters, L.; Mitard, J.; Spessot, A.; Caillat, C.; Hellings, G.; Eneman, G.; Aoulaiche, M.; Na, H. -J.; Son, Y.; Noh, K. B.; Fazan, P.; Lee, S. -G.; Collaert, N.; Mocuta, A.; Horiguchi, N.; Thean, A. V. -Y. 分享 收藏
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Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements Smets, Quentin; Verhulst, Anne S.; El Kazzi, Salim; Verreck, Devin; Richard, Olivier; Bender, Hugo; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Heyns, Marc M. 分享 收藏
Temperature dependence of frequency dispersion in III-V metal-oxide-semiconductor C-V and the capture/emission process of border traps Vais, Abhitosh; Lin, Han-Chung; Dou, Chunmeng; Martens, Koen; Ivanov, Tsvetan; Xie, Qi; Tang, Fu; Givens, Michael; Maes, Jan; Collaert, Nadine; Raskin, Jean-Pierre; DeMeyer, Kristin; Thean, Aaron 分享 收藏
Quantitative Method to Determine Planar Defect Frequency in In As Nanowires by High Resolution X-ray Diffraction Liu, Ziyang; Merckling, Clement; Caymax, Matty; Rooyackers, Rita; Collaert, Nadine; Thean, Aaron; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc 分享 收藏