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Bertrand Parvais

interuniversity microelectronics centre

35H指数
265论文数
4.1K被引数
收录论文 11
发表时间
Hole Generation Triggered Dynamic Drain Induced Barrier Lowering of RF GaN MIS-HEMTs射频GaN MIS-HEMTs中由空穴产生触发的动态漏致势垒降低
err2026-09-01
err0
PREAI
errYang, Yi; Yu, Hao; Kuo, Ying-Chun; Huang, Cheng-Ying; Tsai, Meng-Che; Gupta, Amratansh; Navolotskaia, Anna; Chong, Yiliang; Lin, Wei-Tung; Yadav, Sachin; Alian, AliReza; Peralagu, Uthayasankaran; Collaert, Nadine; Parvais, Bertrand; Wu, Tian-Li
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Semi-On State Hole Generation in GaN HEMTs: Experimental Evidence and TCAD Modeling半开启状态下GaN HEMTs中的空穴产生:实验证据和TCAD建模
err2026-09-01
err0
PREAI
errKuo, Ying-Chun; Yu, Hao; Braga, Nelson de Almeida; Fang, Jingtian; Gupta, Amratansh; Yadav, Sachin; Sibaja-Hernandez, Arturo; Alian, Alireza; Peralagu, Uthayasankaran; Collaert, Nadine; Parvais, Bertrand
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Comparative cradle-to-gate LCA of RF power amplifiers for user equipment用户设备用RF功率放大器的比较性摇篮到大门生命周期评估
err2025-11-20
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PREAI
errBenjamin Vanhouche; Abhitosh Vais; Lizzie Boakes; Job Soethoudt; AliReza Alian; Lars-Åke Ragnarsson; Cédric Rolin; Bertrand Parvais
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AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates
err2024-08-15
err0
errOAAI
errCardinael, Pieter; Yadav, Sachin; Hahn, Herwig; Zhao, Ming; Banerjee, Sourish; Esfeh, Babak Kazemi; Mauder, Christof; O'Sullivan, Barry; Peralagu, Uthayasankaran; Vohra, Anurag; Langer, Robert; Collaert, Nadine; Parvais, Bertrand; Raskin, Jean-Pierre
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Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers针对RF/mm波功率放大器的肖特基栅极GaN-on-Silicon HEMT结构的偏置温度应力期间的电荷俘获和发射
err2024-07-24
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errOAAI
errO'Sullivan, Barry; Rathi, Aarti; Alian, Alireza; Yadav, Sachin; Yu, Hao; Sibaja-Hernandez, Arturo; Peralagu, Uthayasankaran; Parvais, Bertrand; Chasin, Adrian; Collaert, Nadine
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Thermal budget increased alloy disorder scattering of 2DEG in III-N heterostructures
err2022-05-26
err5
PREAI
errYu, Hao; Parvais, Bertrand; Zhao, Ming; Rodriguez, Raul; Peralagu, Uthayasankaran; Alian, Alireza; Collaert, Nadine
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Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate
err2021-09-29
err5
errOAAI
errMols, Yves; Vais, Abhitosh; Yadav, Sachin; Witters, Liesbeth; Vondkar, Komal; Alcotte, Reynald; Baryshnikova, Marina; Boccardi, Guillaume; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine; Langer, Robert; Kunert, Bernardette
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Design of Ultra-wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices
err2009-05-01
err27
PREAI
errPonton, Davide; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Tiebout, Marc; Parvais, Bertrand; Siprak, Domagoj; Knoblinger, Gerhard
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The potential of FinFETs for analog and RF circuit applications
err2007-11-01
err38
PREAI
errWambacq, Piet; Verbruggen, Bob; Scheir, Karen; Borremans, Jonathan; Dehan, Morin; Linten, Dirnitri; De Heyn, Vincent; Van der Plas, Geert; Mercha, Abdelkarim; Parvais, Bertrand; Gustin, Cedric; Subramanian, Vaidy; Collaert, Nadine; Jurczak, Malgorzata; Decoutere, Stefaan
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Threshold Voltage Bias Temperature Instability of RF MIS-HEMTs and Schottky HEMTs Under Semi-On State StressRF MIS-HEMTs和Schottky HEMTs在半开启态应力下的阈值电压偏压温度不稳定性
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err0
PREAI
errMeng-Che Tsai; Ying-Chun Kuo; Hao Yu; Nelson de Almeida Braga; Yi Yang; Tzu-Heng Lin; Jingtian Fang; Wei-Tung Lin; Anna Navolotskaia; Barry O’Sullivan; Aarti Rathi; Amratansh Gupta; Sachin Yadav; AliReza Alian; Uthayasankaran Peralagu; Bertrand Parvais; Nadine Collaert; Tian-Li Wu
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