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G

Geoffrey Pourtois

imec

49H指数
425论文数
1.1W被引数
收录论文 117
发表时间
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Low-resistance contacts for p-type monolayer tungsten diselenide transistors using metallic layered Nb0.3W0.7Se2用于p型单层二硒化钨晶体管的低电阻接触，采用层状金属Nb0.3W0.7Se2
errNature Electronics
IF40.9
err2026-03-16
err0
PREAI
errZheng Sun; Aryan Afzalian; Peng Wu; Huairuo Zhang; Sergiy Krylyuk; Rahul Tripathi; Hao-Yu Lan; Yuanqiu Tan; Jun Cai; Geoffrey Pourtois; Albert Davydov; Zhihong Chen; Joerg Appenzeller
err分享
err收藏
Oxide induced degradation in MoS2 field-effect transistors氧化物诱导的退化在MoS2场效应晶体管中
errnpj 2D Materials and Applications
IF8.8
err2026-03-11
err0
errOAAI
errFabian Ducry; Benoit Van Troeye; Mauro Dossena; Mathieu Luisier; Geoffrey Pourtois; Aryan Afzalian
err分享
err收藏
The Collapse of p-type Mobility in the Amorphous Phase非晶相中p型迁移率的崩溃
errACS Materials Letters
IF8.7
err2025-10-15
err0
PREAI
errMichiel J. van Setten; Geoffrey Pourtois
err分享
err收藏
Fluorine doping of barium bismuthate by SF6 plasma通过SF6等离子体对钡铋酸盐进行氟掺杂
errAIP ADVANCES
IF1.4
err2025-10-01
err0
errOAAI
errCeccon, L.; Ahmed, I.; Kaviani, M.; van de Vondel, J.; Pourtois, G.; Merckling, C.
err分享
err收藏
Mobility calculation in disordered WS2-Al2O3 stacks from first principles无序WS2-Al2O3堆叠的迁移率第一性原理计算
errnpj 2D Materials and Applications
IF8.8
err2025-08-01
err0
errOAAI
errMauro Dossena; Benoit Van Troeye; Fabian Ducry; Jiang Cao; Aryan Afzalian; Geoffrey Pourtois; Mathieu Luisier
err分享
err收藏
Single-Photon Source Monolithically Integrated on a 300 mm Silicon Wafer Using III–V Nano-ridge Engineering基于III-V纳米脊工程的300 mm硅晶圆单片集成单光子源
errACS Photonics
IF6.7
err2025-06-16
err0
PREAI
errDavide Colucci; Ulrich Pfister; Reynald Alcotte; Peter Swekis; Michiel De Maeyer; Zhongtao Ouyang; Tom Vandekerckhove; Yves Mols; Robert Langer; Michael Jetter; Simone Luca Portalupi; Peter Michler; Geoffrey Pourtois; Dries Van Thourhout; Bernardette Kunert
err分享
err收藏
Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method通过贝塞尔束电子衍射方法揭示未来一代晶体管技术中的应变
errMICROELECTRONIC ENGINEERING
IF3.1
err2025-06-05
err0
PREAI
errFavia, P.; Eneman, G.; Veloso, A.; Mehta, A. Nalin; Martinez, G. T.; Richard, O.; Hikavyy, A.; Gowda, P. P.; Seidel, F.; Pourtois, G.; De Keersgieter, A.; Grieten, E.
err分享
err收藏
In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTIIn-Poor IGZO: 在形成气体退火和PBTI中对氢的卓越抗性
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2025-04-28
err0
PREAI
errKruv, A; van Setten, MJ; Chasin, A; Matsubayashi, D; Dekkers, HFW; Pavel, A; Wan, YQ; Trivedi, K; Rassoul, N; Li, J; Jiang, YC; Subhechha, S; Pourtois, G; Belmonte, A; Kar, GS
err分享
err收藏
Impact of Interface and Surface Oxide Defects on WS2 Electronic Properties from First Principles界面和表面氧化物缺陷对WS2电子性质的影响：第一性原理研究
errACS NANO
IF16
err2025-03-18
err0
PREAI
errVan Troeye, B; Ducry, F; Dossena, M; Luisier, M; Afzalian, A; Pourtois, G
err分享
err收藏
Size effect on Raman measured stress and strain induced phonon shifts in ultra-thin silicon film
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-15
err0
PREAI
errPashartis, C.; van Setten, M. J.; Pourtois, G.
err分享
err收藏
Unveiling surface reactivity: the crucial role of auxiliary ligands in gallium amidinate-based precursors for atomic layer deposition
errDALTON TRANSACTIONS
IF3.3
err2025-01-01
err0
PREAI
errPugliese, Eva; Coutancier, Damien; Pavard, Paul-Alexis; Hervochon, Julien; van der Linden, Bram; Casaretto, Nicolas; Bourcier, Sophie; Pourtois, Geoffrey; Bouttemy, Muriel; Auffrant, Audrey; Schneider, Nathanaelle
err分享
err收藏
Effects of Strain on Diborane Dissociative Adsorption and Boron Incorporation on Si0.5Ge0.5(001)-2 x 1 Surfaces
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2024-07-17
err0
PREAI
errRengo, Gianluca; Pourtois, Geoffrey; Porret, Clement; Loo, Roger; Vantomme, Andre
err分享
err收藏
The C1s core levels of polycyclic aromatic hydrocarbons and styrenic polymers: A first-principles study
errJOURNAL OF CHEMICAL PHYSICS
IF3.1
err2024-06-03
err2
PREAI
errGalleni, Laura; Escudero, Daniel; Pourtois, Geoffrey; van Setten, Michiel J.
err分享
err收藏
Computing elastic tensors of amorphous materials from first-principles
errCOMPUTATIONAL MATERIALS SCIENCE
IF3.3
err2024-06-01
err3
errOAAI
errPashartis, C.; van Setten, M. J.; Houssa, M.; Pourtois, G.
err分享
err收藏
Chalcogenide Ovonic Threshold Switching Selector硫族化合物双向阈值开关选择器
errNANO-MICRO LETTERS
IF36.3
err2024-01-11
err12
errOAAI
errZhao, Zihao; Clima, Sergiu; Garbin, Daniele; Degraeve, Robin; Pourtois, Geoffrey; Song, Zhitang; Zhu, Min
err分享
err收藏
First-principles investigation of thickness-dependent electrical resistivity for low-dimensional interconnects
errPHYSICAL REVIEW B
IF3.7
err2023-09-11
err8
PREAI
errVan Troeye, Benoit; Sankaran, Kiroubanand; Tokei, Zsolt; Adelmann, Christoph; Imec, Geoffrey Pourtois
err分享
err收藏
Dilute Rhenium Doping and its Impact on Defects in MoS2稀铼掺杂及其对MoS2中缺陷的影响
errACS NANO
IF16
err2023-08-03
err22
PREAI
errTorsi, Riccardo; Munson, Kyle T.; Pendurthi, Rahul; Marques, Esteban; Van Troeye, Benoit; Huberich, Lysander; Schuler, Bruno; Feidler, Maxwell; Wang, Ke; Pourtois, Geoffrey; Das, Saptarshi; Asbury, John B.; Lin, Yu-Chuan; Robinson, Joshua A.
err分享
err收藏
In silico screening for As/Se-free ovonic threshold switching materials
errNPJ COMPUTATIONAL MATERIALS
IF11.9
err2023-06-03
err8
errOAAI
errClima, Sergiu; Matsubayashi, Daisuke; Ravsher, Taras; Garbin, Daniele; Delhougne, Romain; Kar, Gouri Sankar; Pourtois, Geoffrey
err分享
err收藏
Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study
errNPJ 2D MATERIALS AND APPLICATIONS
IF8.8
err2023-05-31
err9
errOAAI
errDuflou, Rutger; Pourtois, Geoffrey; Houssa, Michel; Afzalian, Aryan
err分享
err收藏
A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO2 Atomic Layer Deposition
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2023-05-22
err4
errOAAI
errKaneda, Yukio; Nye, Rachel A. A.; Marques, Esteban A. A.; Armini, Silvia; Delabie, Annelies; van Setten, Michiel J. J.; Pourtois, Geoffrey
err分享
err收藏

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