Yan Gu

nanjing university of posts and telecommunications

H指数:25

被引数:2,153

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Alternating electrochemical deposition of PANI/rGO composite electrodes with in situ GO reduction for enhanced electrochemical performance

通过原位还原GO交替电化学沉积PANI/rGO复合电极以增强电化学性能

Materials Letters

IF2.7

2026-09-090

PRE

Enhancing the Optoelectronic Performance of InGaN-Based RGB Micro-LEDs via a DBR/Ag Composite Structure for Display Applications

通过DBR/Ag复合结构提升InGaN基RGB微LED的光电性能以用于显示应用

IEEE Transactions on Electron Devices

IF3.2

2026-07-290

PRE

Applications of VR technologies in patients with reversible visual dysfunction: a scoping review

VR技术在可逆性视觉功能障碍患者中的应用：一项范围综述

Disability and Rehabilitation-Assistive Technology

IF2.2

2026-01-010

PRE

Monolithic AlGaN-Based Ultraviolet Event Sensor Pixel

IEEE Transactions on Electron Devices

IF3.2

2025-12-310

PRE

Optimising Potassium Levels Improved the Lodging Resistance Index and Soybean Yield in Maize-Soybean Intercropping by Enhanced Stem Diameter and Lignin Synthesis Enzyme Activity

JOURNAL OF AGRONOMY AND CROP SCIENCE

IF2.8

2025-02-200

PRE

Therapeutic Effect of Shikimic Acid on Heat Stress-Induced Myocardial Damage: Assessment via Network Pharmacology, Molecular Docking, Molecular Dynamics Simulation, and In Vitro Experiments

PHARMACEUTICALS

IF4.8

2024-11-052

OAAI

UV-visible dual-band photodetector based on an all-inorganic Mn-doped CsPbCl3/GaN type-II heterojunction

基于全无机Mn掺杂CsPbCl3/GaN II型异质结的紫外可见双带光电探测器

APPLIED PHYSICS LETTERS

IF3.6

2023-12-0510

PRE

Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1-xN/AlyGa1-yN asymmetrical heterostructure

APPLIED PHYSICS LETTERS

IF3.6

2023-12-0512

PRE

Broadband Photodetector for Ultraviolet to Visible Wavelengths Based on the BA2PbI4/GaN Heterostructure

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-11-239

PRE

Metagenomic next-generation sequencing to investigate infectious keratitis by Corynespora cassiicola: a case report

FRONTIERS IN MEDICINE

IF3

2023-11-171

OAAI

Band Gap Engineering in Quadruple-Layered Sillen-Aurivillius Perovskite Oxychlorides Bi7Fe2Ti2O17X (X = Cl, Br, I) for Enhanced Photocatalytic Performance

CATALYSTS

IF4

2023-04-1410

Dual-wavelength photodetector based on layered WSe2/n-GaN van der Waals heterostructure

基于层状WSe2/n-gan范德华异质结构的双波长光电探测器

MATERIALS TODAY NANO

IF8.2

2023-03-0116

PRE

Improved performance of AlGaN solar-blind avalanche photodiodes with dual multiplication layers

具有双倍增层的AlGaN日盲雪崩光电二极管的性能改进

OPTICAL AND QUANTUM ELECTRONICS

IF4

2022-12-214

PRE

Ultra-low dark current back-illuminated AlGaN-based solar-blind ultraviolet photodetectors with broad spectral response

OPTICS EXPRESS

IF3.3

2022-06-1514

Facile Synthesis of Sillen-Aurivillius Layered Oxide Bi7Fe2Ti2O17Cl with Efficient Photocatalytic Performance for Degradation of Tetracycline

CATALYSTS

IF4

2022-02-156

Normal Force-Induced Highly Efficient Mechanical Sterilization of GaN Nanopillars

LANGMUIR

IF3.9

2022-01-064

PRE

Quantum Transport of Sub-10 nm Monolayer WGe2N4 Transistors

亚10 nm单层WGe2N4晶体管的量子输运

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-10-2829

PREAI

Van der Waals heterostructures of Janus XSeTe (X = Mo, W) and arsenene monolayers: A first principles study

Janus XSeTe (X = Mo，W) 和arsenene单层的范德华异质结构: 第一性原理研究

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2021-03-019

PREAI

High-Performance Ballistic Quantum Transport of Sub-10 nm Monolayer GeS Field-Effect Transistors

亚10 nm单层GeS场效应晶体管的高性能弹道量子输运

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-02-2421

PREAI

Enhanced performance of high Al-content AlGaN MSM photodetectors by electrode modification using hexadecanethiol

OPTICS EXPRESS

IF3.3

2021-02-0419

Yan Gu

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