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Qimiao Chen

Nanyang Technological University

H指数:15

被引数:706

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Systematic investigation of photoluminescence characteristics in GeSn films with varied Sn content by high-resolution and wide-spectrum system

通过高分辨率和宽光谱系统对变Sn含量的GeSn薄膜的光致发光特性进行系统研究

Journal of Luminescence

IF3.6

2026-01-080

PRE

Strain-enhanced luminescence from biaxially strained Ge light-emitting diodes on GeOI substrates

APPLIED PHYSICS LETTERS

IF3.6

2025-04-010

PRE

Design of Directional-Emission GeSn Multi-Quantum-Well Light-Emitting Diodes on Si

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2025-01-010

PRE

Wafer-scale growth of 2D SnSx hybrid films on germanium by atomic layer deposition for broadband photodetection

APPLIED SURFACE SCIENCE

IF6.9

2024-11-010

PRE

Purification, characterization and anti-hyperuricemic mechanism of novel xanthine oxidase inhibitory peptides from tea (Camellia sinensis L.) protein

FOOD BIOSCIENCE

IF5.9

2024-10-012

PRE

High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic-photonic integrated circuits at telecommunication wavelengths

IF3.3

2024-02-271

PRE

Ge0.92Sn0.08/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate

PHOTONICS RESEARCH

IF7.2

2023-09-1210

OA

A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface

IF16

2023-06-2318

OA

Enhanced light emission of germanium light-emitting-diode on 150 mm germanium-on-insulator (GOI)

IF3.3

2023-05-112

OA

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

IF6.7

2023-05-089

OA

Unusually-high growth rate (∼2.8 μm/s) of germania nanowires and its hierarchical structures by an in-situ continuous precursor supply

CERAMICS INTERNATIONAL

IF5.6

2023-03-010

OAAI

Wafer-scale nanostructured black silicon with morphology engineering via advanced Sn-assisted dry etching for sensing and solar cell applications

IF5.1

2023-01-015

OA

High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2022-03-0125

OAAI

Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing

IF5.1

2022-01-0118

OA

Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

APPLIED PHYSICS LETTERS

IF3.6

2021-11-099

OA

Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 μm

高温热退火对GeSn薄膜材料和2μm光电探测器的影响

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2021-08-014

OAAI

GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 1.55 μm optical communication bands

IF3.3

2021-07-3014

PRE

Simulation of High-Efficiency Resonant-Cavity-Enhanced GeSn Single-Photon Avalanche Photodiodes for Sensing and Optical Quantum Applications

IEEE SENSORS JOURNAL

IF4.5

2021-07-0120

OAAI

Surface plasmon enhanced GeSn photodetectors operating at 2 μm

IF3.3

2021-03-0316

OA

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

硅上用于短波红外应用的金属-半导体-金属GeSn光电探测器

IF3

2020-08-2124

OAAI