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Xiao Gong

National University of Singapore

38H指数
369论文数
5.6K被引数
收录论文 72
发表时间
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Ultraviolet-Induced Band Engineering in Black Phosphorus/Gallium Nitride Heterojunction Toward High-Performance Broadband Photodetection紫外诱导黑磷/氮化镓异质结的带工程化实现高性能宽带光电探测
errAdvanced Functional Materials
IF19
err2026-09-09
err0
PREAI
errZhenyu Liu; Shi Fang; Zhixiang Gao; Zhanpeng Su; Yang Kang; Muhammad Hunain Memon; Junxing Qiu; Reza Taheri Ghahrizjani; Yuchen Du; Yiguo Yan; Jiayao Li; Haochen Zhang; Xutao Zhang; Guofeng Yang; Jinshui Miao; Xiao Gong; Renjie Zhou; Yong Yan; Haiding Sun
err分享
err收藏
Gate-Side Hydrogen Regulation by an In Situ NiO Interlayer in ITO FETs Achieving Sub-5 mV ΔVTH @ 1 ks Under EOX of 5 MV/cm and 415 K通过原位NiO中间层在ITO FETs中实现栅侧氢调节，在EOX为5 MV/cm和415 K条件下达到低于5 mV的ΔVTH @ 1 ks
errIEEE Electron Device Letters
IF4.5
err2026-09-01
err0
PREAI
errChen, Xuanqi; Liu, Gan; Shi, Wei; Geng, Xiangrui; Wang, Yuxuan; Shao, Rui; Chen, Wei; Gong, Xiao
err分享
err收藏
Strain-Induced Mobility Enhancement in Crystalline In2O3 FETs应变诱导的迁移率提升在结晶态In2O3 FETs中
errIEEE Electron Device Letters
IF4.5
err2026-06-29
err0
PREAI
errHuangbai Liu; Yan Le; Wei Shi; Xinming Li; Gan Liu; Dong Zhang; Rui Shao; Chen Sun; Xiao Gong
err分享
err收藏
Room Temperature Fluorination: A Cost-Effective VTH Engineering Solution for BEOL Oxide Semiconductor FETs Enabling Inverters With Record Gain of 2687 and High Noise Margin室温氟化：一种成本效益高的BEOL氧化物半导体FETs的VTH工程解决方案，实现了增益记录值为2687的反相器和高噪声容限
errIEEE Electron Device Letters
IF4.5
err2026-06-03
err0
PREAI
errXuanqi Chen; Gan Liu; Kaizhen Han; Yuye Kang; Yuxuan Wang; Rui Shao; Kai Ni; Bich-Yen Nguyen; Xiao Gong
err分享
err收藏
Zero-Dimensional Europium Hybrid Metal Halide with f−f Transition Luminescence and Time-Dependent Afterglow零维铕杂化金属卤化物，具有f-f跃迁发光和时间依赖性余辉
errACS Materials Letters
IF8.7
err2026-05-29
err0
PREAI
errZhihui Rao; Jiahuan Huang; Xiao Gong
err分享
err收藏
A nitride-based non-volatile memory enabled by electric-field-induced phase transition通过电场诱导相变实现的氮化物基非易失性存储器
errNature Materials
IF38.5
err2026-04-16
err0
PREAI
errTao Zeng; Zhongran Liu; Youdi Gu; Bingjie Dang; Yuan Gao; Tianlong Xu; Peng Li; Shu Shi; Kaixuan Sun; Yao Zhu; Xiao Gong; He Tian; Jingsheng Chen
err分享
err收藏
Exceptional Thickness Scalability of MFM Stack: Outstanding Performance in 3-nm TiN/3-nm HZO/3-nm TiN CapacitorsMFM堆栈的卓越厚度可扩展性：3-nm TiN/3-nm HZO/3-nm TiN电容器的卓越性能
errIEEE Transactions on Electron Devices
IF3.2
err2026-03-02
err0
errOAAI
errXiaolin Wang; Yang Feng; Yaoyu He; Yuye Kang; Jixuan Wu; Wei Shi; Zhilun Zhang; Zijie Zheng; Leming Jiao; Zuopu Zhou; Dong Zhang; Chen Sun; Jiezhi Chen; Xiao Gong
err分享
err收藏
Approaching theoretical polarization limit in HfZrO2/HfLaO2 multilayers在HfZrO2/HfLaO2多层结构中接近理论极化极限
errNature Communications
IF15.7
err2026-02-24
err0
errOAAI
errShu Shi; Haolong Xi; Hanxin Su; Fatoye Sawyerr; Zhongran Liu; Zekun Zhang; Geng Huangfu; Jiangzhen Niu; Yiyuan Sun; Ping Yang; Xiao Gong; Wei Chen; Evgeny Y. Tsymbal; Xiaobing Yan; He Tian; Tengfei Cao; Jingsheng Chen
err分享
err收藏
A hardware demonstration of a universal programmable RRAM-based probabilistic computer for molecular docking用于分子对接的基于通用可编程RRAM的概率计算机的硬件演示
errNature Communications
IF15.7
err2025-12-10
err0
errOAAI
errYihan He; Ming-Chun Hong; Qiming Ding; Chih-Sheng Lin; Chih-Ming Lai; Chao Fang; Xiao Gong; Tuo-Hung Hou; Gengchiau Liang
err分享
err收藏
Advancing the Frontiers of HfO2-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications推进HfO2-Based铁电存储器的前沿: 从材料到应用的创新概念
errAdvanced Materials
IF26.8
err2025-11-02
err0
errOAAI
errZuopu Zhou; Lingqi Li; Yang Feng; Xiaolin Wang; Zijie Zheng; Leming Jiao; Haofei Zheng; Yufei Shi; Kah-Wee Ang; Xiao Gong
err分享
err收藏
Flexible InGaAs/InAlAs avalanche photodiodes for short-wave infrared detection柔性InGaAs/InAlAs雪崩光电二极管用于短波红外检测
errNature Communications
IF15.7
err2025-10-23
err0
errOAAI
errJishen Zhang; Rui Shao; Haiwen Xu; Kian Hua Tan; Satrio Wicaksono; Qiwen Kong; Gong Zhang; Chen Sun; Yue Chen; Aaron Danner; Soon-Fatt Yoon; Xiao Gong
err分享
err收藏
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced ModelingBTI可靠性之IGZTO FETs：氢动力学、AC/DC应力效应与先进建模
errIEEE Transactions on Electron Devices
IF3.2
err2025-09-26
err0
PREAI
errGan Liu; Zhilun Zhang; Duy Hieu Trinh; Hanjie Li; Qiwen Kong; Chen Sun; Zuopu Zhou; Dong Zhang; Xiaolin Wang; Kaizhen Han; Yuye Kang; Bich-Yen Nguyen; Kai Ni; Gengchiau Liang; Xiao Gong
err分享
err收藏
BEOL-Compatible Amorphous Oxide Semiconductor High-Voltage Transistors Achieving BFoM Beyond the GaAs Limit与BEOL兼容的非晶氧化物半导体高压晶体管，实现了超越GaAs限制的性能参数。
errIEEE Electron Device Letters
IF4.5
err2025-09-04
err0
PREAI
errYuxuan Wang; Jiawei Xie; Wei Shi; Hanchao Li; Hanlin Xie; Dong Zhang; Chen Sun; Zijie Zheng; Yue Chen; Rui Shao; Xuanqi Chen; Geok Ing Ng; Kaizhen Han; Xiao Gong
err分享
err收藏
Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1-xO2 ferroelectric film基于后端工艺兼容的HfxZr1-xO2铁电薄膜的温度依赖性唤醒行为
errSCIENCE CHINA-INFORMATION SCIENCES
IF7.6
err2025-05-14
err0
PREAI
errLi, Xiaopeng; Tai, Lu; Dou, Xiaoyu; Feng, Yang; Zhang, Dong; Zhan, Xuepeng; Wu, Jixuan; Gong, Xiao; Chen, Jiezhi
err分享
err收藏
Ferroelectric capacitive memories: devices, arrays, and applications铁电电容存储器：器件、阵列及应用
errNANO CONVERGENCE
IF11
err2025-01-22
err1
errOAAI
errZhou, Zuopu; Jiao, Leming; Zheng, Zijie; Chen, Yue; Han, Kaizhen; Kang, Yuye; Zhang, Dong; Wang, Xiaolin; Kong, Qiwen; Sun, Chen; Xie, Jiawei; Gong, Xiao
err分享
err收藏
Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga2O3 MOSFETs
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-03
err0
PREAI
errXu, Haiwen; Zhang, Jishen; Gong, Xiao
err分享
err收藏
BEOL Three-Dimensional Stackable Oxide Semiconductor CMOS Inverter with a High Voltage Gain of 233 at Cryogenic Temperatures
errNANO LETTERS
IF9.1
err2024-12-20
err0
PREAI
errSun, Yiyuan; Xu, Ying; Zheng, Zijie; Wang, Yuxuan; Kang, Yuye; Han, Kaizhen; Shi, Wei; Wang, Jinyong; Gong, Xiao
err分享
err收藏
Impact of hot plasma effects on electron cyclotron current drive in tokamak plasmas热等离子体效应对托卡马克等离子体中电子回旋电流驱动的影响
errNUCLEAR FUSION
IF4
err2024-10-23
err0
errOAAI
errZheng, P. W.; Feng, J. L.; Lu, L. F.; Yin, L.; Huang, Q. H.; Gong, X. Y.; Zhang, F.; He, L. H.; Zhong, Y. J.
err分享
err收藏
High Performance Indium-Tin-Oxide Schottky Diodes for Terahertz Band Operation
errNANO LETTERS
IF9.1
err2024-06-05
err0
PREAI
errHan, Kaizhen; Kang, Yuye; Tu, Yi-Hsin; Wu, Chaoming; Wang, Chengkuan; Liu, Long; Zhang, Gong; Chen, Yue; Ni, Kai; Liang, Gengchiau; Gong, Xiao
err分享
err收藏
Ferroelectric compute-in-memory annealer for combinatorial optimization problems用于组合优化问题的铁电存储器中计算退火器
errNATURE COMMUNICATIONS
IF15.7
err2024-03-18
err1
errOAAI
errYin, Xunzhao; Qian, Yu; Vardar, Alptekin; Gunther, Marcel; Mueller, Franz; Laleni, Nellie; Zhao, Zijian; Jiang, Zhouhang; Shi, Zhiguo; Shi, Yiyu; Gong, Xiao; Zhuo, Cheng; Kampfe, Thomas; Ni, Kai
err分享
err收藏

研究方向

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合作学者
合作期刊
S
Seeram Ramakrishna
H 指数: 197 · 论文数: 2.4K
张勇 封面图
张勇 (Yong‐Wei Zhang)
H 指数: 107 · 论文数: 1.0K
李小鹏 封面图
李小鹏 (Xiaopeng Li)
H 指数: 93 · 论文数: 966
E
Evgeny Y. Tsymbal
H 指数: 87 · 论文数: 544
K
Krishna C. Saraswat
H 指数: 85 · 论文数: 797
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