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H

Hao Zhou

department of materials science and engineering

H指数:20

被引数:1,619

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Preparation of low-temperature sintered (Mg0.4Zn0.6)2SiO4 ceramics with CuO addition and simulation for application in microwave antennas

添加CuO的低温烧结(Mg0.4Zn0.6)2SiO4陶瓷的制备及在微波天线中的应用模拟

materials science materials in electronics

IF0

2025-08-290

PRE

Preparation and photocatalytic properties of TiO2 based on burst-mode femtosecond laser and anodization

基于爆模飞秒激光和阳极化的TiO2的制备及其光催化性能研究

OPTICAL MATERIALS

IF4.2

2025-02-010

PRE

Ge0.92Sn0.08/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate

PHOTONICS RESEARCH

IF7.2

2023-09-1210

OA

A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface

IF16

2023-06-2318

OA

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

IF6.7

2023-05-089

OA

Unusually-high growth rate (∼2.8 μm/s) of germania nanowires and its hierarchical structures by an in-situ continuous precursor supply

CERAMICS INTERNATIONAL

IF5.6

2023-03-010

OAAI

Wafer-scale nanostructured black silicon with morphology engineering via advanced Sn-assisted dry etching for sensing and solar cell applications

IF5.1

2023-01-015

OA

High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2022-03-0125

OAAI

Grating and hole-array enhanced germanium lateral p-i-n photodetectors on an insulator platform

IF3.3

2022-01-318

OA

Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing

IF5.1

2022-01-0118

OA

Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

APPLIED PHYSICS LETTERS

IF3.6

2021-11-099

OA

Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 μm

高温热退火对GeSn薄膜材料和2μm光电探测器的影响

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2021-08-014

OAAI

GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 1.55 μm optical communication bands

IF3.3

2021-07-3014

PRE

Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improvedresponsivity and specific detectivity at 1,550 nm

IF3.3

2021-05-1315

OA

Multifunctional optoelectronic device based on graphene-coupled silicon photonic crystal cavities

IF3.3

2021-03-2410

OA

Surface plasmon enhanced GeSn photodetectors operating at 2 μm

IF3.3

2021-03-0316

OA

Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate

IF3.3

2020-11-0236

OA

Insights into the Origins of Guided Microtrenches and Microholes/rings from Sn Segregation in Germanium-Tin Epilayers

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2020-08-1810

OAAI

High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 μm

IF3.3

2020-03-2489

OA

Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

APPLIED PHYSICS LETTERS

IF3.6

2009-04-01123

PREAI