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O

Oliver Supplie

Technische Universitat Ilmenau

H指数:19

被引数:862

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Structure and Origin of Antiphase Domains and Related Defects in Thin GaP Epilayers on As-Modified Si(100)

CRYSTAL GROWTH & DESIGN

IF3.4

2022-11-172

PRE

Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals

APPLIED SURFACE SCIENCE

IF6.9

2021-11-013

PREAI

Atomic surface structure of MOVPE-prepared GaP(111)B

MOVPE制备的GaP(111)B的原子表面结构

APPLIED SURFACE SCIENCE

IF6.9

2020-12-011

PREAI

Quantification of the As/P content in GaAsP during MOVPE growth

APPLIED PHYSICS LETTERS

IF3.6

2020-08-100

PREAI

GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering

APPLIED SURFACE SCIENCE

IF6.9

2020-06-0116

PREAI

Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111)

PHYSICAL REVIEW MATERIALS

IF3.4

2018-12-034

PREAI

Double-layer stepped Si(100) surfaces prepared in As-rich CVD ambience

APPLIED SURFACE SCIENCE

IF6.9

2018-12-0115

PREAI

Optical constants and origin of the absorption edge of GaPN lattice-matched to Si

PHYSICAL REVIEW B

IF3.7

2018-08-168

PREAI

GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2018-06-0118

PREAI

GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2018-06-0113

PREAI

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

与有效光诱导反应相关的界面的原位表征

ADVANCED MATERIALS INTERFACES

IF4.4

2017-10-1024

OAAI

Impact of Rotational Twin Boundaries and Lattice Mismatch on III-V Nanowire Growth

IF16

2017-09-1311

OAAI

Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

在化学气相环境中制备的用于随后的iii-v异质外延的Si(111) 表面的分析

APPLIED SURFACE SCIENCE

IF6.9

2017-01-0110

PREAI

Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III-V Nanowire Growth

CRYSTAL GROWTH & DESIGN

IF3.4

2016-10-1917

PREAI

Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces

PHYSICAL REVIEW B

IF3.7

2016-10-1832

OAAI

In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)

IF4.5

2015-12-3029

OAAI

Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth

APPLIED PHYSICS LETTERS

IF3.6

2015-06-0817

PREAI

Formation of GaP/Si(100) Heterointerfaces in the Presence of Inherent Reactor Residuals

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2015-04-2917

PREAI

Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory

PHYSICAL REVIEW B

IF3.7

2014-12-0137

OAAI

Electronic structures of GaP(100) surface reconstructions probed with two-photon photoemission spectroscopy

PHYSICAL REVIEW B

IF3.7

2014-04-2818

PREAI