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Manali Nandy

Technische Universitat Ilmenau

H指数:6

被引数:80

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Atomic surface structure of antiphase domains in heteroepitaxial GaP films grown on arsenic-terminated Si(100)

异质外延GaP薄膜中反相畴的原子表面结构，生长在砷终止的Si(100)上

Journal of Crystal Growth

IF2

2025-12-010

OAAI

Surface structure of MOVPE-prepared As-modified Si(100) substrates

MOVPE制备的As改性Si(100) 衬底的表面结构

APPLIED SURFACE SCIENCE

IF6.9

2024-11-011

OAAI

Optical In Situ Studies of Ge(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE Reactors for Low-Defect III-P Growth

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-02-090

PRE

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

APPLIED SURFACE SCIENCE

IF6.9

2022-12-014

OAAI

Structure and Origin of Antiphase Domains and Related Defects in Thin GaP Epilayers on As-Modified Si(100)

CRYSTAL GROWTH & DESIGN

IF3.4

2022-11-172

PRE

Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals

APPLIED SURFACE SCIENCE

IF6.9

2021-11-013

PREAI

Band bending at heterovalent interfaces: Hard X-ray photoelectron spectroscopy of GaP/Si(001) heterostructures

APPLIED SURFACE SCIENCE

IF6.9

2021-11-015

PRE

A Route to Obtaining Low-Defect III-V Epilayers on Si(100) Utilizing MOCVD

CRYSTAL GROWTH & DESIGN

IF3.4

2021-08-236

PREAI

Quantification of the As/P content in GaAsP during MOVPE growth

APPLIED PHYSICS LETTERS

IF3.6

2020-08-100

PREAI

Double-layer stepped Si(100) surfaces prepared in As-rich CVD ambience

APPLIED SURFACE SCIENCE

IF6.9

2018-12-0115

PREAI

GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2018-06-0113

PREAI