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E

Erik Lind

lund university

34H指数
239论文数
3.6K被引数
收录论文 38
发表时间
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a-plane GaN-based fully vertical FinFETs with normally-off operationa平面GaN基全垂直鳍式场效应晶体管（FinFET）的常断态工作
errSemiconductor Science and Technology
IF2.1
err2026-05-01
err0
PREAI
errGarigapati, Navya Sri; So, Byeongchan; Bjork, Mikael; Nawaz, Muhammad; Darakchieva, Vanya; Lind, Erik
err分享
err收藏
Crystal Growth Design for Bowing Mitigation in Thick AlGaN Layers on GaN Substrates
errCrystal Growth and Design
IF3.4
err2026-02-06
err0
errOAAI
errByeongchan So; Dat Q. Tran; Adamantia Logotheti; Minho Kim; Jovana Malm; Navya Sri Garigapati; Erik Lind; Plamen Paskov; Michal Bockowski; Vanya Darakchieva
err分享
err收藏
Compound Semiconductors
errPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
IF1.9
err2025-11-01
err0
PREAI
errLind, Erik; Wernersson, Lars-erik; Borgstrom, Magnus
err分享
err收藏
Gate-controlled near-surface Josephson junctions
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-01-23
err0
errOAAI
errOlausson, L.; Olausson, P.; Lind, E.
err分享
err收藏
Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
errNEUROMORPHIC COMPUTING AND ENGINEERING
IF6.1
err2023-09-18
err2
errOAAI
errWinge, David; Borgstroem, Magnus; Lind, Erik; Mikkelsen, Anders
err分享
err收藏
Time evolution of surface species during the ALD of high-k oxide on InAs高k氧化物在InAs上ALD过程中表面物种的时间演化
errSURFACES AND INTERFACES
IF6.3
err2023-07-01
err5
errOAAI
errD'Acunto, Giulio; Shayesteh, Payam; Kokkonen, Esko; de la Cruz, Virginia Boix; Rehman, Foqia; Mosahebfard, Zohreh; Lind, Erik; Schnadt, Joachim; Timm, Rainer
err分享
err收藏
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
errNANO LETTERS
IF9.1
err2023-05-25
err2
errOAAI
errSvensson, Johannes; Olausson, Patrik; Menon, Heera; Lehmann, Sebastian; Lind, Erik; Borg, Mattias
err分享
err收藏
Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing
errNANO LETTERS
IF9.1
err2022-05-12
err6
errOAAI
errSodergren, Lasse; Olausson, Patrik; Lind, Erik
err分享
err收藏
Strained InxGa(1-x)As/InP near surface quantum wells and MOSFETs
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-03-02
err4
PREAI
errGarigapati, Navya Sri; Sodergren, Lasse; Olausson, Patrik; Lind, Erik
err分享
err收藏
Oxygen relocation during HfO2 ALD on InAs
errFARADAY DISCUSSIONS
IF3.1
err2022-01-01
err8
errOAAI
errD'Acunto, Giulio; Kokkonen, Esko; Shayesteh, Payam; Boix, Virginia; Rehman, Foqia; Mosahebfard, Zohreh; Lind, Erik; Schnadt, Joachim; Timm, Rainer
err分享
err收藏
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2021-11-19
err6
errOAAI
errJonsson, Adam; Svensson, Johannes; Fiordaliso, Elisabetta Maria; Lind, Erik; Hellenbrand, Markus; Wernersson, Lars-Erik
err分享
err收藏
Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2020-11-19
err28
errOAAI
errD'Acunto, Giulio; Troian, Andrea; Kokkonen, Esko; Rehman, Foqia; Liu, Yen-Po; Yngman, Sofie; Yong, Zhihua; McKibbin, Sarah R.; Gallo, Tamires; Lind, Erik; Schnadt, Joachim; Timm, Rainer
err分享
err收藏
Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-10-19
err4
errOAAI
errLiu, Yen-Po; Sodergren, Lasse; Mousavi, S. Fatemeh; Liu, Yi; Lindelow, Fredrik; Lind, Erik; Timm, Rainer; Mikkelsen, Anders
err分享
err收藏
Tuning of Source Material for InAs/InGaAsSb/GaSb ApplicationSpecific Vertical Nanowire Tunnel FETs
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2020-09-01
err20
PREAI
errKrishnaraja, Abinaya; Svensson, Johannes; Memisevic, Elvedin; Zhu, Zhongyunshen; Persson, Axel R.; Lind, Erik; Wallenberg, Lars Reine; Wernersson, Lars-Erik
err分享
err收藏
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-07-06
err6
errOAAI
errSoedergren, Lasse; Garigapati, Navya Sri; Borg, Mattias; Lind, Erik
err分享
err收藏
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-10-01
err8
errOAAI
errKrishnaraja, Abinaya; Svensson, Johannes; Lind, Erik; Wernersson, Lars-Erik
err分享
err收藏
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
errNANO LETTERS
IF9.1
err2017-09-14
err37
errOAAI
errKilpi, Olli-Pekka; Svensson, Johannes; Wu, Jun; Persson, Axel R.; Wallenberg, Reine; Lind, Erik; Wernersson, Lars-Erik
err分享
err收藏
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field Effect Transistors Operating below 60 mV/decade
errNANO LETTERS
IF9.1
err2017-06-15
err85
errOAAI
errMemisevic, Elvedin; Hellenbrand, Markus; Lind, Erik; Persson, Axel R.; Sant, Saurabh; Schenk, Andreas; Svensson, Johannes; Wallenberg, Reine; Wernersson, Lars-Erik
err分享
err收藏
Impact of doping and diameter on the electrical properties of GaSb nanowires
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-02-02
err13
errOAAI
errBabadi, Aein S.; Svensson, Johannes; Lind, Erik; Wernersson, Lars-Erik
err分享
err收藏
Size-effects in indium gallium arsenide nanowire field-effect transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2016-08-11
err7
PREAI
errZota, Cezar B.; Lind, E.
err分享
err收藏

研究方向

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合作学者
合作期刊
A
A. C. Gossard
H 指数: 137 · 论文数: 1.7K
L
Lars Samuelson
H 指数: 95 · 论文数: 1.1K
R
Reine Wallenberg
H 指数: 60 · 论文数: 324
M
M.J.W. Rodwell
H 指数: 57 · 论文数: 663
W
W. Seifert
H 指数: 51 · 论文数: 357
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