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S

Sung‐Min Yoon

Kyung Hee University

37H指数
313论文数
4.9K被引数
收录论文 70
发表时间
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Synergistic strategy for high-performance 2T0C DRAM combining vertical-channel IGZO transistors with ZnO charge-trap layer for dynamic VON control结合垂直通道IGZO晶体管与ZnO电荷俘获层的协同策略，用于动态VON控制的2T0C DRAM的高性能实现
errMaterials Science in Semiconductor Processing
IF4.6
err2026-06-25
err0
PREAI
errJi-Won Kang; Kyung Min Kim; Chi-Sun Hwang; Sung-Min Yoon
err分享
err收藏
Geometrical Design Schemes for the 2T0C DRAM Cell Using a Vertical Stack Transistor with a Distinctive Single IGZO Active Layer采用垂直堆叠晶体管和独特单层IGZO有源层的2T0C DRAM单元的几何设计方案
errACS Applied Materials & Interfaces
IF0
err2026-04-02
err0
PREAI
errJi-Won Kang; Chi-Sun Hwang; Sung-Min Yoon
err分享
err收藏
Enhancement in spatiotemporal processing and synaptic functionality in multi-gate synapse transistors using InGaZnO channel and HfO2 electrolytic gate insulator采用InGaZnO通道和HfO2电解质栅绝缘体的多栅极突触晶体管在时空处理和突触功能方面的增强
errMaterials Science in Semiconductor Processing
IF4.6
err2025-10-21
err0
PREAI
errHyunsik Woo; Sung-Min Yoon
err分享
err收藏
Strategical Implementation of Vertical Stack Configuration with Planar- and Vertical-Channel Thin Film Transistors Using a Single InGaZnO Active Layer for 3D Device Integration基于单一InGaZnO活性层的垂直堆叠配置的平面型和垂直型沟道薄膜晶体管在三维器件集成中的战略实施
errADVANCED MATERIALS TECHNOLOGIES
IF6.2
err2025-10-01
err0
PREAI
errKang, Ji-Won; Moon, Seung-Eon; Hwang, Chi-Sun; Yoon, Sung-Min
err分享
err收藏
Impact of Double-Gate Structure on Temporal and Reinforced Synaptic Weight Updates in Electrolytic-Gated Synapse Transistors双栅结构对电解质门控突触晶体管中时序和强化突触权重更新的影响
errIEEE Electron Device Letters
IF4.5
err2025-09-05
err0
PREAI
errHyunsik Woo; Sung-Min Yoon
err分享
err收藏
Crystallization and hydrogenation of In2O3 channels for top-gate thin-film transistors with combinations of Al2O3 intermediate control layer and oxygen annealingIn₂O₃沟道的结晶与氢化处理，以及结合Al₂O₃中间控制层和氧气退火工艺的顶栅薄膜晶体管研究
errApplied Surface Science
IF6.9
err2025-08-12
err0
PREAI
errSe-Hyun Chun; Sung-Min Yoon
err分享
err收藏
Crystallographic orientation engineering of In2O3 channel via thickness modulation for high-mobility top-gate thin-film transistors通过厚度调制进行In2O3沟道的晶体学取向工程，以实现高迁移率顶栅薄膜晶体管
errJournal of Alloys and Compounds
IF6.3
err2025-07-09
err0
PREAI
errChae-Eun Oh; Sung-Min Yoon
err分享
err收藏
Process design for improvement in device performance of top-gate TFTs using In-Sn-Zn-O channels prepared by thermal atomic-layer deposition
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-05-01
err0
PREAI
errYoo, Jae-Hyuk; Kwon, Young-Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Yang, Jong-Heon; Hwang, Chi-Sun; Yoon, Sung-Min
err分享
err收藏
Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-10-01
err0
PREAI
errKang, Ji -Won; Lee, Dong-Hee; Kwon, Young-Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Hwang, Chi-Sun; Yoon, Sung-Min
err分享
err收藏
Synergistic Effects of Deposition Temperatures for Active and Gate Insulator of Top-Gate Thin-Film Transistors Using InGaZnO Channels Prepared by Thermal Atomic-Layer Deposition使用通过热原子层沉积制备的InGaZnO沟道对顶栅薄膜晶体管的有源和栅极绝缘体的沉积温度的协同效应
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-10-01
err1
PREAI
errSeo, Ye-Jin; Lee, Jae-Wook; Kwon, Young-Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Yoon, Sung-Min
err分享
err收藏
Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al 2 O 3 tunneling layer
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-08-01
err5
PREAI
errCho, Yun-Ju; Kwon, Young -Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Hwang, Chi-Sun; Yoon, Sung- Min
err分享
err收藏
Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nmAl2O3间隔层对沟道长度低于100 nm的台面形垂直沟道in-ga-zn-o薄膜晶体管短沟道效应改善的影响
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-03-01
err6
PREAI
errOh, Chae-Eun; Kwon, Young -Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Yoon, Sung -Min
err分享
err收藏
Effective strategies for current boosting in a mesa-shaped In-Ga-Zn-O vertical-channel thin-film transistor with a short-channel length of 40 nm
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2024-01-01
err2
PREAI
errOh, Chae-Eun; Kwon, Young-Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Yoon, Sung-Min
err分享
err收藏
Bi-layered plasmonic photothermal nanocomposite heater for laser-irradiation based rapid digital annealing of metal and oxide films
errAPPLIED SURFACE SCIENCE
IF6.9
err2024-01-01
err0
PREAI
errKim, Yeon Ju; Kim, Jin-Ju; Kim, Yeon Uk; Cho, Min Kyung; Ko, Sang Han; Shim, Jiyun; Kim, Seung Ju; Lee, Su Yeon; Ji, Seul Gi; Lee, Sun Sook; Park, Jung Hwan; Yoon, Sung-Min; Jeong, Sunho
err分享
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Effective strategies for current boosting in a mesa-shaped In-Ga-Zn-O vertical-channel thin-film transistor with a short-channel length of 40 nm (vol 12, pg 14455, 2024)
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2024-01-01
err0
errOAAI
errOh, Chae-Eun; Kwon, Young-Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Yoon, Sung-Min
err分享
err收藏
Improvement in Short-Channel Effects and Bias-Stress Stability of Vertical Thin-Film Transistors Using Atomic-Layer-Deposited In-Ga-Sn-O Channels
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-11-21
err8
PREAI
errNoh, Shin-Ho; Kim, Hyo-Eun; Kwon, Young Ha; Seong, Nak-Jin; Choi, Kyujeong; Hwang, Chi-Sun; Han, Gyu-Ho; Sung, Seung-Yeon; Jung, Goo-Eun; Yoon, Sung Min
err分享
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Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-11-16
err3
PREAI
errKim, Dong-Hee; Kwon, Young-Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Yoon, Sung-Min
err分享
err收藏
Interrelation between ferroelectric properties and defects based on low-frequency noise analysis of HZO ferroelectric capacitor
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-04-21
err5
PREAI
errJin, Seunghee; Jeon, Juye; Kim, Min Jung; Heo, Kiseok; Kim, Jeong Hun; Im, Jong-Pil; Yoon, Sung-Min; Moon, Seung Eon; Woo, Jiyong; Lee, Jae Woo
err分享
err收藏
Improvement in energy consumption and operational stability of electrolyte-gated synapse transistors using atomic-layer-deposited HfO2 thin films使用原子层沉积的HfO2薄膜改善电解质门控突触晶体管的能耗和运行稳定性
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-01-01
err7
PREAI
errKim, Dong-Hee; Yoon, Sung-Min
err分享
err收藏
Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In-Ga-Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2022-12-09
err14
PREAI
errLee, Dong-Hee; Kwon, Young-Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Kim, Gyungtae; Yoon, Sung-Min
err分享
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研究方向

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