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Changhyeon Han

hanyang university

8H指数
30论文数
208被引数
收录论文 17
发表时间
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Noise-Limited Bit Precision in Ferroelectric Synaptic Transistors for High-Resolution Neuromorphic Computing噪声限制的位精度在铁电突触晶体管中用于高分辨率神经形态计算
errAdvanced Functional Materials
IF19
err2026-09-07
err0
errOAAI
errJaehong Park; Yeonseop Shin; Changhyeon Han; Sangwoo Kim; Eunchan Park; Youngchan Cho; Jaehong Min; Hyunjun Ahn; Jaekyoung Park; Cheol-Woong Yang; Jangsaeng Kim; Daewoong Kwon; Wonjun Shin
err分享
err收藏
Repurposing Si CMOS nonidealities for stochastic and analog image processing利用Si CMOS非理想特性进行随机和模拟图像处理
errScience Advances
IF12.5
err2026-02-20
err0
errOAAI
errBeen Kwak; Ryun-Han Koo; Changhyeon Han; Yunho Shin; Joonhyeok Choi; Dongbin Kim; Jongwoo Lee; Jiseong Im; Youngchan Cho; Jong-Ho Lee; Wonjun Shin; Daewoong Kwon
err分享
err收藏
Interface-Engineered TiO2 Interlayer for Reliable Hafnia-Based MFMIS FeFETs界面工程化的TiO2中间层用于可靠的氧化铪基MFMIS FeFETs
errAdvanced Electronic Materials
IF5.3
err2026-02-02
err0
errOAAI
errChanghyeon Han; Been Kwak; Hyun-Min Kim; Dahye Yu; Daewoong Kwon
err分享
err收藏
Degradation and Recovery in HZO-Based FeFETs under Hydrogen and Thermal Stress for CMOS Integration
errACS Applied Electronic Materials
IF4.7
err2026-01-23
err0
PREAI
errChanghyeon Han; Been Kwak; Yelin Yoo; Sangeun Kwak; Daewoong Kwon
err分享
err收藏
Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor
errADVANCED ELECTRONIC MATERIALS
IF5.3
err2025-12-01
err0
errOAAI
errLee, Haneul; Kim, Sujong; Han, Changhyeon; Kim, Haesung; Yang, Hyojin; Park, Sejun; Yun, Sanghyuk; Lee, Yoon Jung; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong; Kwon, Daewoong; Bae, Jong-Ho
err分享
err收藏
Unraveling ionic switching dynamics in high-k dielectric double-gate transistors via low-frequency noise spectroscopy通过低频噪声谱学解析高k介电双栅晶体管中的离子开关动力学
errNano Convergence
IF11
err2025-10-03
err0
errOAAI
errSoi Jeong; Chang-Hyeon Han; Been Kwak; Ryun-Han Koo; Youngchan Cho; Jangsaeng Kim; Jong-Ho Lee; Daewoong Kwon; Wonjun Shin
err分享
err收藏
Corrigendum to “Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures” [Mater. Sci. Semicond. 200 (2025) 109995]勘误：“Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures” [Mater. Sci. Semicond. 200 (2025) 109995]
errMaterials Science in Semiconductor Processing
IF4.6
err2025-09-27
err0
PREAI
errChanghyeon Han; Been Kwak; Joonhyeok Choi; Hyucknam Kwon; Ki-Ryun Kwon; Rino Choi; Daewoong Kwon
err分享
err收藏
Synergistic Modulation of Polarization and Leakage Current in MPB-HZO Capacitors via TiO2 Interlayer通过TiO2中间层协同调控MPB-HZO电容器的极化和漏电流
errAdvanced Electronic Materials
IF5.3
err2025-09-27
err0
errOAAI
errChanghyeon Han; Been Kwak; Joonhyeok Choi; Sung-Wook Park; Dahye Yu; Minsuk Song; Rino Choi; Daewoong Kwon
err分享
err收藏
Physical Reservoir Computing System via Hybrid Ferroelectric-Ionic Transistors基于铁电-离子混合晶体管的物理存储器计算系统
errAdvanced Materials
IF26.8
err2025-09-26
err0
PREAI
errRyun-Han Koo; Changhyeon Han; Jiyong Yim; Jiseong Im; Youngchan Cho; Jong-Ho Lee; Suraj S Cheema; Jangsaeng Kim; Wonjun Shin; Daewoong Kwon
err分享
err收藏
Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures结构调控的相稳定性与缺陷工程在铁电HfxZr1-xO2异质结构中
errMaterials Science in Semiconductor Processing
IF4.6
err2025-08-30
err0
PREAI
errChanghyeon Han; Been Kwak; Joonhyeok Choi; Hyucknam Kwon; Ki-Ryun Kwon; Rino Choi; Daewoong kwon
err分享
err收藏
Ultrathin TiO2-interfaced hafnia ferroelectric transistor for large-scale neuromorphic computing超薄TiO2界面铪基铁电晶体管用于大规模神经形态计算
errNano Energy
IF17.1
err2025-06-09
err0
PREAI
errChanghyeon Han; Ryun-Han Koo; Wonjun Shin; Jangsaeng Kim; Been Kwak; Jiseong Im; Sojin Kim; Seung-Yong Lee; Youngho Kang; Daewoong Kwon
err分享
err收藏
Tunable coercive voltage and polarization of HZO through field-induced phase transitions通过场致相变调控HZO的矫顽电压和极化强度
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-05-18
err0
PREAI
errHan, Changhyeon; Kwon, Ki-Ryun; Jeong, Soi; Kim, Jeong-Han
err分享
err收藏
Analog reservoir computing via ferroelectric mixed phase boundary transistors通过铁电混合相边界晶体管进行模拟储层计算
errNATURE COMMUNICATIONS
IF15.7
err2024-10-23
err1
errOAAI
errKim, Jangsaeng; Park, Eun Chan; Shin, Wonjun; Koo, Ryun-Han; Han, Chang-Hyeon; Kang, He Young; Yang, Tae Gyu; Goh, Youngin; Lee, Kilho; Ha, Daewon; Cheema, Suraj S.; Jeong, Jae Kyeong; Kwon, Daewoong
err分享
err收藏
All-Ferroelectric Spiking Neural Networks via Morphotropic Phase Boundary Neurons通过变相边界神经元的全铁电尖峰神经网络
errADVANCED SCIENCE
IF14.1
err2024-10-09
err0
errOAAI
errKim, Jangsaeng; Park, Eun Chan; Shin, Wonjun; Koo, Ryun-Han; Im, Jiseong; Han, Chang-Hyeon; Lee, Jong-Ho; Kwon, Daewoong
err分享
err收藏
Ferroelectric polarization-switching acceleration of sputtered Hf0.5Zr0.5O2 with defect-induced polarization of interlayer溅射Hf0.5Zr0.5O2的铁电极化转换加速与中间层的缺陷诱导极化
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2023-10-01
err3
PREAI
errHan, Changhyeon; Yim, Jiyong; Nguyen, An; Kim, Jeonghan; Kwon, Ki Ryun; Kim, Sangwoo; Jeong, Soi; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong
err分享
err收藏
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2 (vol 160, 107401, 2023)
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-06-01
err0
errOAAI
errHan, Changhyeon; Kwon, Ki Ryun; Kim, Jeonghan; Yim, Jiyong; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Jeong, Soi; Choi, Rino; Kwon, Daewoong
err分享
err收藏
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2氧空位对射频溅射Hf0.5Zr0.5O2铁电特性的影响
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-06-01
err10
PREAI
errHan, Changhyeon; Kwon, Ki Ryun; Kim, Jeonghan; Yim, Jiyong; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Jeong, Soi; Choi, Rino; Kwon, Daewoong
err分享
err收藏

研究方向

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合作期刊
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