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C

Chao Han

xidian-wuhu research institute

H指数:14

被引数:607

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First demonstration of a novel 1.2 kV asymmetric P+ buried layer 4H-SiC MOSFET with recored short-circuit capability

首次展示具有记录短路能力的1.2 kV不对称P+埋层4H-SiC MOSFET

Science China-Information Sciences

IF7.6

2026-10-260

PRE

Surface-step-controlled in-plane orientation of β-Ga2O3 films on 4H-SiC for deep-ultraviolet photodetectors

4H-SiC衬底上表面台阶调控的β-Ga2O3薄膜面内取向用于深紫外光电探测器

Chemical Engineering Journal

IF13.2

2026-07-200

PRE

A High-Temperature Stable Ohmic Contact Process on Lightly Doped n-Type 4H-SiC Based on a W/C Multilayer Structure

基于W/C多层结构的轻掺杂n型4H-SiC高温稳定欧姆接触工艺

Micromachines 2025, Vol. 16, Page 1408

IF3

2025-12-150

OAAI

Physical design of a burnup measurement device based on a D-D neutron source

基于D-D中子源的燃耗测量装置的物理设计

NUCLEAR ENGINEERING AND DESIGN

IF2.1

2025-09-010

PRE

Analysis and fabrication of a SiC super-junction termination structure in a state of charge imbalance

在电荷不平衡状态下对SiC超结终端结构的分析与制备

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2025-03-120

PRE

Quantum phase transitions on the noncommutative circle

PHYSICAL REVIEW B

IF3.7

2025-02-050

PRE

Conformal operator content of the Wilson-Fisher transition on fuzzy sphere bilayers

PHYSICAL REVIEW B

IF3.7

2024-09-091

PRE

Improving the efficiency and stability of betavoltaic batteries based on understanding efficiency fluctuations and gaps with theoretical limits

APPLIED PHYSICS LETTERS

IF3.6

2024-08-140

PRE

Conformal four-point correlators of the three-dimensional Ising transition via the quantum fuzzy sphere

PHYSICAL REVIEW B

IF3.7

2023-12-0610

PRE

Uncovering Conformal Symmetry in the 3D Ising Transition: State-Operator Correspondence from a Quantum Fuzzy Sphere Regularization

PHYSICAL REVIEW X

IF15.7

2023-04-1826

OA

Design of High-Efficiency SiC Betavoltaic Battery Structures With Reduced Impact of Near-Surface Recombination Based on Accurate Modeling

IEEE TRANSACTIONS ON ELECTRON DEVICES

IF3.2

2022-12-013

PRE

Demonstration of Picosecond 4H-SiC Diode Avalanche Shaper With Voltage Rise Rate of 11.14 kV/ns and Peak Power Density of 62 MW/cm2

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2022-04-014

PRE

Anisotropy and quench dynamics of quasiholes in fractional quantum Hall liquids

PHYSICAL REVIEW B

IF3.7

2022-01-041

OA

Disorder-driven phase transitions in bosonic fractional quantum Hall liquids

PHYSICAL REVIEW B

IF3.7

2022-01-030

OA

Ohmic contacts simultaneously formed on n-type and p-type 4H-SiC at low temperature

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2019-10-019

PREAI

Effects of proton radiation on field limiting ring edge terminations in 4H-SiC junction barrier Schottky diodes

质子辐射对4H-SiC结势垒肖特基二极管场限环边缘终端的影响

SCIENCE CHINA-TECHNOLOGICAL SCIENCES

IF4.9

2019-02-282

PREAI

Delay-Optimal Joint Processing in Computation-Constrained Fog Radio Access Networks

IF3.6

2019-01-012

OAAI

Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

SCIENCE CHINA-TECHNOLOGICAL SCIENCES

IF4.9

2015-07-175

PREAI