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Yimen Zhang

xidian university

H指数:20

被引数:2,067

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An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network

IF3

2023-10-300

OAAI

Design of High-Efficiency SiC Betavoltaic Battery Structures With Reduced Impact of Near-Surface Recombination Based on Accurate Modeling

IEEE TRANSACTIONS ON ELECTRON DEVICES

IF3.2

2022-12-013

PRE

Nanolaminated HfO2/Al2O3 Dielectrics for High-Performance Silicon Nanomembrane Based Field-Effect Transistors on Biodegradable Substrates

ADVANCED MATERIALS INTERFACES

IF4.4

2022-10-035

PRE

Demonstration of Picosecond 4H-SiC Diode Avalanche Shaper With Voltage Rise Rate of 11.14 kV/ns and Peak Power Density of 62 MW/cm2

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2022-04-014

PRE

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

IF4.3

2020-07-085

OAAI

Progress of Ultra-Wide Bandgap Ga₂O₃ Semiconductor Materials in Power MOSFETs

超宽禁带Ga<sub>2</sub>O<sub>3</sub> 半导体材料在功率mosfet中的研究进展

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2020-05-01152

PREAI

The impact of laser energy, bias and irradiation positions on single event transients of InP HBT

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-01-284

PREAI

Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics

IF3.6

2020-01-018

OAAI

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

IF3.6

2020-01-0111

OAAI

Ohmic contacts simultaneously formed on n-type and p-type 4H-SiC at low temperature

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2019-10-019

PREAI

The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

IF4.3

2019-08-097

OAAI

Atomic-layer-deposited HfO2/Al2O3 laminated dielectrics for bendable Si nanomembrane based MOS capacitors

APPLIED PHYSICS LETTERS

IF3.6

2019-04-114

PREAI

Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga2O3 metal-oxide-semiconductor capacitors

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-03-1916

OAAI

Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC

IF4.3

2019-03-0517

OAAI

Effects of proton radiation on field limiting ring edge terminations in 4H-SiC junction barrier Schottky diodes

质子辐射对4H-SiC结势垒肖特基二极管场限环边缘终端的影响

SCIENCE CHINA-TECHNOLOGICAL SCIENCES

IF4.9

2019-02-282

PREAI

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

IF4.3

2019-02-0111

OAAI

Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

APPLIED SURFACE SCIENCE

IF6.9

2018-06-018

PREAI

4H-SiC monolithic Darlington transistors with slight current gain drop at high collector current density

SCIENCE CHINA-TECHNOLOGICAL SCIENCES

IF4.9

2018-03-160

PREAI

Impact of High-Temperature Storage Stressing (HTSS) on Degradation of High-Voltage 4H-SiC Junction Barrier Schottky Diodes

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2018-03-0113

PREAI

Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

APPLIED SURFACE SCIENCE

IF6.9

2018-03-0125

PREAI