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Tomohiro Ichinose

national institute of advanced industrial science and technology

15H指数
73论文数
1.6K被引数
收录论文 27
发表时间
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Material strategies for energy-efficient voltage-controlled magnetic tunnel junctions面向高能效电压调控磁隧道结的材料策略
errJournal of Physics D: Applied Physics
IF3.2
err2026-02-17
err0
errOAAI
errTakayuki Nozaki; Tomohiro Ichinose; Tatsuya Yamamoto; Jun Uzuhashi; Tomohiro Nozaki; Hiroyasu Nakayama; Atsushi Sugihara; Makoto Konoto; Kay Yakushiji; Tadakatsu Ohkubo; Shinji Yuasa
err分享
err收藏
Scanning Magnetic Microscopy Using a High-Sensitivity Room-Temperature Tunnel Magnetoresistance Sensor for Geological Applications
errSensors
IF3.5
err2026-02-07
err0
errOAAI
errHirokuni Oda; Kosuke Fujiwara; Naoto Fukuyo; Hitoshi Kubota; Tomohiro Ichinose; Mikihiko Oogane; Seiji Kumagai; Hitoshi Matsuzaki; Taizo Uchida; Miki Kawabata; Jun Kawai
err分享
err收藏
Liquid–Solid Hybrid Magneto-Mechanical Force Sensor液固混合磁力-机械力传感器
errNano Letters
IF9.1
err2025-12-23
err0
PREAI
errTatsuya Yamamoto; Tomohiro Ichinose; Hiroki Yasuga; Yuki Okamoto; Yusuke Takei; Takayuki Nozaki; Shingo Tamaru; Kay Yakushiji; Hitoshi Kubota; Shinji Yuasa
err分享
err收藏
Cryogenic-temperature grain-to-grain epitaxial growth of high-quality ultrathin CoFe layer on MgFeO tunnel barrier for high-performance magnetic tunnel junctions低温下在MgFeO隧道势垒上实现高质量超薄CoFe层的晶粒间外延生长，以用于高性能磁隧道结
errNPG Asia Materials
IF8.3
err2025-10-17
err0
errOAAI
errTomohiro Ichinose; Tatsuya Yamamoto; Takayuki Nozaki; Kay Yakushiji; Shingo Tamaru; Shinji Yuasa
err分享
err收藏
Impact of GdOx insertion on magnetic anisotropy and damping in double-barrier magnetic stacks
errAPL MATERIALS
IF4.5
err2025-03-01
err0
errOAAI
errKim, Junyeon; Nozaki, Takayuki; Uzuhashi, Jun; Tamaru, Shingo; Ichinose, Tomohiro; Ochiai, Takao; Yamamoto, Tatsuya; Ohkubo, Tadakatsu; Yakushiji, Kay; Yuasa, Shinji
err分享
err收藏
Improvement of voltage-controlled magnetic anisotropy effect by inserting an ultrathin metal capping layer通过插入超薄金属覆盖层来改善压控磁各向异性效应
errAPL MATERIALS
IF4.5
err2024-09-11
err1
errOAAI
errNozaki, Takayuki; Ichinose, Tomohiro; Yamamoto, Tatsuya; Yakushiji, Kay; Yuasa, Shinji
err分享
err收藏
Magneto-transport properties in perpendicularly magnetized magnetic tunnel junctions using an Mg40Fe10O50 tunnel barrier使用Mg40Fe10O50隧道势垒在垂直磁化的磁性隧道结中的磁传输特性
errACTA MATERIALIA
IF9.3
err2024-04-01
err1
PREAI
errYamamoto, Tatsuya; Ichinose, Tomohiro; Uzuhashi, Jun; Nozaki, Takayuki; Ohkubo, Tadakatsu; Yakushiji, Kay; Tamaru, Shingo; Kubota, Hitoshi; Yuasa, Shinji
err分享
err收藏
Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepared by deposition at cryogenic temperatures通过在低温下沉积制备的磁隧道结中的大电压控制的磁各向异性效应
errAPL MATERIALS
IF4.5
err2023-12-04
err2
errOAAI
errNozaki, Takayuki; Ichinose, Tomohiro; Uzuhashi, Jun; Yamamoto, Tatsuya; Konoto, Makoto; Yakushiji, Kay; Ohkubo, Tadakatsu; Yuasa, Shinji
err分享
err收藏
Large tunnel magnetoresistance in magnetic tunnel junctions with magnetic electrodes of metastable body-centered cubic CoMnFe alloys
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2023-10-01
err5
PREAI
errIchinose, Tomohiro; Ikeda, Junichi; Onodera, Yuta; Tsuchiya, Tomoki; Suzuki, Kazuya Z.; Mizukami, Shigemi
err分享
err收藏
Cryogenic Temperature Deposition of High-Performance CoFeB/ MgO/CoFeB Magnetic Tunnel Junctions on?300 mm Wafers300毫米晶片上高性能CoFeB/ MgO/CoFeB磁隧道结的低温沉积
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-03-28
err7
PREAI
errIchinose, Tomohiro; Yamamoto, Tatsuya; Nozaki, Takayuki; Yakushiji, Kay; Tamaru, Shingo; Konoto, Makoto; Yuasa, Shinji
err分享
err收藏
Large Tunneling Magnetoresistance in Perpendicularly Magnetized Magnetic Tunnel Junctions Using Co75Mn25/Mo/Co20Fe60B20 Multilayers使用Co75Mn25/Mo/Co20Fe60B20多层膜在垂直磁化的磁隧道结中的大隧穿磁阻
errPHYSICAL REVIEW APPLIED
IF4.4
err2023-02-07
err2
errOAAI
errYamamoto, Tatsuya; Ichinose, Tomohiro; Uzuhashi, Jun; Nozaki, Takayuki; Ohkubo, Tadakatsu; Yakushiji, Kay; Tamaru, Shingo; Yuasa, Shinji
err分享
err收藏
Insight into the mechanism of bidirectional magnetoelectric effects unveilcycloidal/uncompensated hybrid antiferromagnetic multiferroics
errPHYSICAL REVIEW MATERIALS
IF3.4
err2023-01-17
err0
PREAI
errIchinose, Tomohiro; Naganuma, Hiroshi
err分享
err收藏
Precise interface engineering using a post-oxidized ultrathin MgAl layer for the voltage-controlled magnetic anisotropy effect
errAPL MATERIALS
IF4.5
err2022-08-03
err13
errOAAI
errNozaki, Takayuki; Nozaki, Tomohiro; Onoda, Hiroshige; Nakayama, Hiroyasu; Ichinose, Tomohiro; Yamamoto, Tatsuya; Konoto, Makoto; Yuasa, Shinji
err分享
err收藏
Perpendicular magnetic anisotropy and its voltage control in MgO/CoFeB/Mo/CoFeB/MgO junctionsMgO/CoFeB/Mo/CoFeB/MgO结的垂直磁各向异性及其电压控制
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2022-04-21
err4
PREAI
errYamamoto, Tatsuya; Ichinose, Tomohiro; Uzuhashi, Jun; Nozaki, Takayuki; Ohkubo, Tadakatsu; Yakushiji, Kay; Tamaru, Shingo; Kubota, Hitoshi; Fukushima, Akio; Hono, Kazuhiro; Yuasa, Shinji
err分享
err收藏
Lattice Softening in Metastable bcc CoxMn100-x (001) Ferromagnetic Layers for a Strain-Free Magnetic Tunnel Junction
errPHYSICAL REVIEW APPLIED
IF4.4
err2021-11-30
err9
errOAAI
errElphick, Kevin; Yoshida, Kenta; Roy, Tufan; Ichinose, Tomohiro; Kunimatsu, Kazuma; Tsuchiya, Tomoki; Suzuki, Kazuya Z.; Tsujikawa, Masahito; Nagai, Yasuyoshi; Mizukami, Shigemi; Shirai, Masafumi; Hirohata, Atsufumi
err分享
err收藏
High-Quality Sputtered BiFeO3 for Ultrathin Epitaxial Films
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2021-11-08
err6
PREAI
errIchinose, Tomohiro; Miura, Daisuke; Naganuma, Hiroshi
err分享
err收藏
Enhanced tunnel magnetoresistance in Mn-based perpendicular magnetic tunnel junctions utilizing antiferromagnetically coupled bcc-Co-based interlayer
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-04-29
err11
PREAI
errSuzuki, Kazuya Z.; Ichinose, Tomohiro; Iihama, Satoshi; Monma, Ren; Mizukami, Shigemi
err分享
err收藏
Non-destructive imaging for quality assurance of magnetoresistive random-access memory junctions
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2019-10-16
err10
errOAAI
errJackson, E.; Wu, Y.; Frost, W.; Kim, J-Y; Samiepour, M.; Elphick, K.; Sun, M.; Kubota, T.; Takanashi, K.; Ichinose, T.; Mizukami, S.; Hirohata, A.
err分享
err收藏
Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2019-09-28
err0
errOAAI
errIchinose, Tomohiro; Elphick, Kelvin; Hirohata, Atsufumi; Mizukami, Shigemi
err分享
err收藏
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy
errPHYSICAL REVIEW MATERIALS
IF3.4
err2019-08-05
err30
errOAAI
errTsuchiya, Tomoki; Roy, Tufan; Elphick, Kelvin; Okabayashi, Jun; Bainsla, Lakhan; Ichinose, Tomohiro; Suzuki, Kazuya Z.; Tsujikawa, Masahito; Shirai, Masafumi; Hirohata, Atsufumi; Mizukami, Shigemi
err分享
err收藏

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