H. Riechert - Publications, H-index & Citations

H. Riechert

Laboratoire de physique de la matière condensée

49H指数

287论文数

7.6K被引数

收录论文 82

发表时间

The carbon nanotube gatemon qubit 碳纳米管门控比特

Nature Communications

IF15.7

2025-08-05

OAAI

H. Riechert; S. Annabi; A. Peugeot; H. Duprez; M. Hantute; K. Watanabe; T. Taniguchi; E. Arrighi; J. Griesmar; J.-D. Pillet; L. Bretheau

Josephson junctions based on ultraclean carbon nanotubes

PHYSICAL REVIEW APPLIED

IF4.4

2024-12-10

OAAI

Annabi, S.; Arrighi, E.; Peugeot, A.; Riechert, H.; Griesmar, J.; Watanabe, K.; Taniguchi, T.; Bretheau, L.; Pillet, J. -d.

Two-tone spectroscopy of high-frequency quantum circuits with a Josephson emitter

PHYSICAL REVIEW APPLIED

IF4.4

2024-12-06

OAAI

Peugeot, A.; Riechert, H.; Annabi, S.; Balembois, L.; Villiers, M.; Flurin, E.; Griesmar, J.; Arrighi, E.; Pillet, J. -d.; Bretheau, L.

Engineering a U(1) lattice gauge theory in classical electric circuits

PHYSICAL REVIEW B

IF3.7

2022-05-31

OAAI

Riechert, Hannes; Halimeh, Jad C.; Kasper, Valentin; Bretheau, Landry; Zohar, Erez; Hauke, Philipp; Jendrzejewski, Fred

The impact of ELT distortions and instabilities on future astrometric observations

MONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY

IF4.8

2018-05-31

OAAI

Rodeghiero, G.; Pott, J. -U.; Arcidiacono, C.; Massari, D.; Glueck, M.; Riechert, H.; Gendron, E.

Growth of boron-doped few-layer graphene by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2018-04-17

OAAI

Soares, G. V.; Nakhaie, S.; Heilmann, M.; Riechert, H.; Lopes, J. M. J.

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

NANO LETTERS

IF9.1

2015-05-29

PREAI

Woelz, M.; Hauswald, C.; Flissikowski, T.; Gotschke, T.; Fernandez-Garrido, S.; Brandt, O.; Grahn, H. T.; Geelhaar, L.; Riechert, H.

Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

APPLIED PHYSICS LETTERS

IF3.6

2014-08-26

OAAI

Musolino, M.; Tahraoui, A.; Limbach, F.; Laehnemann, J.; Jahn, U.; Brandt, O.; Geelhaar, L.; Riechert, H.

Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

PHYSICAL REVIEW B

IF3.7

2014-07-08

OAAI

Schumann, T.; Dubslaff, M.; Oliveira, M. H., Jr.; Hanke, M.; Lopes, J. M. J.; Riechert, H.

Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder

APPLIED PHYSICS LETTERS

IF3.6

2013-09-24

PREAI

Sabelfeld, K. K.; Kaganer, V. M.; Limbach, F.; Dogan, P.; Brandt, O.; Geelhaar, L.; Riechert, H.

Acousto-electric transport in epitaxial monolayer graphene on SiC

APPLIED PHYSICS LETTERS

IF3.6

2013-06-05

OAAI

Santos, P. V.; Schumann, T.; Oliveira, M. H., Jr.; Lopes, J. M. J.; Riechert, H.

Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor

NATURE COMMUNICATIONS

IF15.7

2013-04-23

OAAI

Puttisong, Y.; Wang, X. J.; Buyanova, I. A.; Geelhaar, L.; Riechert, H.; Ptak, A. J.; Tu, C. W.; Chen, W. M.

Volmer-Weber growth of AlSb on Si(111)

APPLIED PHYSICS LETTERS

IF3.6

2013-01-28

PREAI

Proessdorf, A.; Hanke, M.; Jenichen, B.; Braun, W.; Riechert, H.

Indium Incorporation in InxGa1-xN/GaN Nanowire Heterostructures Investigated by Line-of-Sight Quadrupole Mass Spectrometry

CRYSTAL GROWTH & DESIGN

IF3.4

2012-10-23

PREAI

Woelz, M.; Fernandez-Garrido, S.; Hauswald, C.; Brandt, O.; Limbach, F.; Geelhaar, L.; Riechert, H.

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

PHYSICAL REVIEW B

IF3.7

2012-09-18

PREAI

Kaganer, V. M.; Jenichen, B.; Brandt, O.; Fernandez-Garrido, S.; Dogan, P.; Geelhaar, L.; Riechert, H.

Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires

APPLIED PHYSICS LETTERS

IF3.6

2012-08-20

PREAI

Pfueller, C.; Ramsteiner, M.; Brandt, O.; Grosse, F.; Rathsfeld, A.; Schmidt, G.; Geelhaar, L.; Riechert, H.

Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes

APPLIED PHYSICS LETTERS

IF3.6

2012-08-06

PREAI

Rodenbach, P.; Giussani, A.; Perumal, K.; Hanke, M.; Dubslaff, M.; Riechert, H.; Calarco, R.; Burghammer, M.; Kolobov, A. V.; Fons, P.

Time-resolved photoluminescence spectroscopy of individual GaN nanowires

PHYSICAL REVIEW B

IF3.7

2012-07-30

PREAI

Gorgis, A.; Flissikowski, T.; Brandt, O.; Cheze, C.; Geelhaar, L.; Riechert, H.; Grahn, H. T.

Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces (vol 85, 235402, 2012)

PHYSICAL REVIEW B

IF3.7

2012-06-25

OAAI

Schumann, T.; Friedland, K. -J.; Oliveira, M. H., Jr.; Tahraoui, A.; Lopes, J. M. J.; Riechert, H.

Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

PHYSICAL REVIEW B

IF3.7

2012-06-01

PREAI

Schumann, T.; Friedland, K. -J.; Oliveira, M. H., Jr.; Tahraoui, A.; Lopes, J. M. J.; Riechert, H.

研究方向