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S

SeungNam Cha

sungkyunkwan university

42H指数
143论文数
5.8K被引数
收录论文 95
发表时间
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Wafer-Scale Ultrafine Wrinkle Architectures of TMDCs for Multifunctionality片级超细褶皱结构过渡金属硫族化物（TMDCs）的多功能应用
errAdvanced Materials
IF26.8
err2026-08-12
err0
PREAI
errJaesik Eom; Jungmoon Lim; Gyuhwi Jeong; Sohyeon Park; Min Jung; Byeongchan Kim; Taehun Kim; Junsung Byeon; Onesik Harm; Jaeseok Kim; Sangyeon Pak; SeungNam Cha
err分享
err收藏
WSe2 Nanodots on Dielectric Nanopillars for Efficient Waveguide Coupling of Localized Emitters介质纳米柱上的WSe2纳米点用于局域发射体的高效波导耦合
errACS Applied Nano Materials
IF5.5
err2026-05-13
err0
PREAI
errSeongwon Gim; Min Jung; SeungNam Cha; Kenji Watanabe; Takashi Taniguchi; Hyeonjun Baek
err分享
err收藏
Photoresponse Properties of Ambipolar Transport in WSe2 Field-Effect TransistorsWSe2场效应晶体管中双极传输的光响应特性
errAdvanced Electronic Materials
IF5.3
err2026-04-01
err0
errOAAI
errYoo, Jongeun; Ko, Seongmin; Ryoo, Sunggyu; Park, Jaehyoung; Kim, Jaeyoung; Jang, Juntae; Sim, Jinwoo; Kim, Donguk; Cha, SeungNam; Zhou, Chongwu; Cho, Kyungjune; Lee, Takhee
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Room Temperature Wafer-Scale Synthesis of Highly Transparent and Conductive p-Type Sulfur-Doped Copper Iodide
errENERGY & ENVIRONMENTAL MATERIALS
IF14.1
err2026-01-25
err0
errOAAI
errSungsan Kang; Taehun Kim; Min Jung; Jinhyeok Pyo; Sohyeon Park; Seonyou Park; Junsung Byeon; Hui Gu Lee; Jin Pyo Hong; Sung-Tae Lee; Minseok Kim; Hyoungsoon Lee; SeungNam Cha; Sangyeon Pak
err分享
err收藏
Asymmetric Contact Engineering for Bottleneck-Free Transport in 2D MoS2 Field-Effect Transistor用于无瓶颈输运的2D MoS2场效应晶体管的不对称接触工程
errAdvanced Functional Materials
IF19
err2026-01-15
err0
errOAAI
errJinhyeok Pyo; Junsung Byeon; Jungmoon Lim; Sohyeon Park; Sungsan Kang; Byeongchan Kim; Gyuhwi Jeong; Haerim Kim; Bongjun Kim; SeungNam Cha; Sangyeon Pak
err分享
err收藏
Universal Fabrication of Graphene/Perovskite Oxide Hybrid Heterostructures
errSMALL STRUCTURES
IF11.3
err2025-12-01
err0
errOAAI
errChoi, Yeongju; Lee, Seungjin; Shin, Dongwon; Sim, Sukhoon; Jung, Min-Hyoung; Wulferding, Dirk; Kim, Minjae; Eom, Jaesik; Mostafa, Myeesha; Ko, Wonhee; Cha, Seungnam; Hwang, Jungseek; Jeong, Hu Young; Kim, Ki Kang; Choi, Woo Seok
err分享
err收藏
Short Channel 2D FET with Sloped Architecture短沟道2D FET倾斜结构
errACS Applied Materials & Interfaces
IF8.2
err2025-10-17
err0
PREAI
errJunsung Byeon; Jinhyeok Pyo; Jungmoon Lim; Jaesik Eom; Byeongchan Kim; Min Jung; Hyungchang Jeong; Kyung-Ho Park; Sangyeon Pak; SeungNam Cha
err分享
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Strain-Dependent Contact Engineering in Monolayer MoS2: Enhancing Charge Carrier Transport through 1D Edge Contacts单层MoS2中的应变相关接触工程: 通过1D边缘接触增强电荷载流子传输
errNANO LETTERS
IF9.1
err2025-10-01
err0
PREAI
errHarm, Onesik; Byeon, Junsung; Lim, Jungmoon; Jeong, Hyungchang; Eom, Jaesik; Kim, Taehun; Cho, Eunhee; Jung, Min; Lee, Seungsub; Lee, Juwon; Pak, Sangyeon; Cha, Seungnam
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Non-volatile resistive switching characteristics in Cu2−xS-based memristor基于Cu₂₋ₓS的忆阻器的非易失性电阻开关特性
errNanoscale
IF5.1
err2025-09-20
err0
PREAI
errSeungsub Lee †; Junsung Byeon †; Sohyeon Park; Taehun Kim; Jungmoon Lim; Jaeseok Kim; Eunhee Cho; Juwon Lee; Sangyeon Pak; SeungNam Cha
err分享
err收藏
Etchant-Free Wafer-Scale 2D Transfer and van der Waals 3D Integration via Peel-Off Force Engineering无刻蚀晶圆级二维材料转移与基于剥离力工程的范德华三维集成
errACS Nano
IF16
err2025-07-08
err0
PREAI
errJinhyeok Pyo; Jungmoon Lim; Junsung Byeon; Sohyeon Park; Sungsan Kang; Seonyou Park; Sung-Tae Lee; Eunmin Kim; Min Kyeong Kim; Jung Inn Sohn; John Hong; Jungwan Cho; Kyung-Ho Park; SeungNam Cha; Sangyeon Pak
err分享
err收藏
Study of High Performance Nanoscale Channel Length Vertical Transistors with a Self-Aligned Blocking Layer高性能纳米尺度通道长度垂直晶体管及其自对准阻挡层的研究
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-01-21
err1
PREAI
errPyo, G; Heo, SJ; Kim, D; Yu, MJ; Kim, J; Cha, S; Kwon, HJ; Jang, JE
err分享
err收藏
Mixed-Dimensional Semiconductors-Based Ternary Circuits with Tunable Negative Transconductance Characteristics基于混合维半导体材料的具有可调负跨导特性的三态电路
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-01-17
err0
PREAI
errLee, HY; Oh, YJ; Joo, E; Jeong, S; Pyo, J; Cha, S; Pak, S; Kim, B
err分享
err收藏
A Practical Zinc Metal Anode Coating Strategy Utilizing Bulk h-BN and Improved Hydrogen Redox Kinetics利用大块h-bn和改进的氢氧化还原动力学的实用锌金属阳极涂层策略
errENERGY & ENVIRONMENTAL MATERIALS
IF14.1
err2024-08-26
err0
errOAAI
errKim, Dong Il; Jeong, Hee Bin; Lim, Jungmoon; Jeong, Hyeong Seop; Kim, Min Kyeong; Pak, Sangyeon; Lee, Sanghyo; An, Geon-Hyoung; Chee, Sang-Soo; Hong, Jin Pyo; Cha, Seungnam; Hong, John
err分享
err收藏
Highly Sustainable h-BN Encapsulated MoS2 Hydrogen Evolution Catalysts
errSMALL
IF12.1
err2024-08-15
err0
PREAI
errLim, Jungmoon; Heo, Su Jin; Jung, Min; Kim, Taehun; Byeon, Junsung; Park, Hongju; Jang, Jae Eun; Hong, John; Moon, Janghyuk; Pak, Sangyeon; Cha, Seungnam
err分享
err收藏
Stray Light in 3D Porous Nanostructures of Single-Crystalline Copper Film
errSMALL SCIENCE
IF8.3
err2024-08-02
err1
errOAAI
errSeo, Yu-Seong; Ha, Teawoo; Yoo, Ji Hee; Kim, Su Jae; Lee, Yousil; Kim, Seungje; Kim, Young-Hoon; Cha, SeungNam; Kim, Young-Min; Jeong, Se-Young; Hwang, Jungseek
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Nanohoneycomb rGO foam as a promising anode material for unprecedented ultrahigh Li storage and excellent endurance at ampere current stability纳米蜂窝rGO泡沫作为一种有前途的阳极材料，可用于前所未有的超高Li存储和安培电流稳定性下的出色耐久性
errAPPLIED SURFACE SCIENCE
IF6.9
err2024-06-01
err1
PREAI
errAhmed, Abu Talha Aqueel; Inamdar, Akbar I.; Hou, Bo; Cho, S.; Hwang, Chan-Cuk; Ahn, Docheon; Sohn, Jung Inn; Cha, SeungNam; Kim, Hyungsang; Im, Hyunsik
err分享
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Toward Ideal Low-Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management在单层CVD MoS2 fet中实现理想的低频噪声: 范德华结和硫空位管理的影响
errADVANCED SCIENCE
IF14.1
err2024-05-21
err2
errOAAI
errShin, Wonjun; Byeon, Junsung; Koo, Ryun-Han; Lim, Jungmoon; Kang, Jung Hyeon; Jang, A-Rang; Lee, Jong-Ho; Kim, Jae-Joon; Cha, Seungnam; Pak, Sangyeon; Lee, Sung-Tae
err分享
err收藏
Surface Wettability-Mediated Enhancement of Hydrogen Evolution Reaction Performance in Electron-Doped MoS2 Monolayers表面润湿性介导的电子掺杂MoS2单层析氢反应性能的增强
errACS APPLIED ENERGY MATERIALS
IF5.5
err2024-03-25
err4
PREAI
errLim, Jungmoon; Kim, Taehun; Park, Hongju; Eom, Jaesik; Jung, Min; Byeon, Junsung; Lim, Younghoon; Pak, Sangyeon; Cha, SeungNam
err分享
err收藏
Achieving Adsorbate-Free Monolayered MoS2 Field Effect Transistors by Controlled Surface Gas Treatment
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-02-26
err3
PREAI
errByeon, Junsung; Eom, Jaesik; Kim, Taehun; Lim, Jungmoon; Jung, Min; Lim, Younghoon; Park, Hongju; Hong, John; Pak, Sangyeon; Cha, Seungnam
err分享
err收藏
Path-dependent hydrogen evolution reaction via selective etching of bilayer MoS2 catalysts
errJOURNAL OF MATERIALS CHEMISTRY A
IF9.5
err2024-01-01
err1
PREAI
errJung, Min; Lim, Jungmoon; Byeon, Junsung; Kim, Taehun; Lim, Younghoon; Park, Hongju; Eom, Jaesik; Lee, Seungsub; Pak, Sangyeon; Cha, SeungNam
err分享
err收藏

研究方向

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合作学者
合作期刊
王
王振林 (Zhong Lin Wang)
H 指数: 320 · 论文数: 3.9K
T
Takashi Taniguchi
H 指数: 198 · 论文数: 5.5K
H
Henry J. Snaith
H 指数: 171 · 论文数: 741
J
James R. Durrant
H 指数: 156 · 论文数: 837
D
Donal D. C. Bradley
H 指数: 124 · 论文数: 749
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