Sergiu Clima - Publications, H-index & Citations

Sergiu Clima

IMEC

40H指数

185论文数

5.2K被引数

收录论文 27

发表时间

Chalcogenide Selector-Only Memory 硫属元素化物仅选择器存储器

Materials Today

IF22

2026-06-16

PREAI

Jiayi Zhao; Yuting Sun; Kun Ren; Taras Ravsher; Daniele Garbin; Sergiu Clima; Min Zhu

Non-Arrhenius threshold switching by field-driven dipolar ordering 场驱偶极有序的非阿伦尼乌斯阈值开关

Nature Communications

IF15.7

2026-05-13

OAAI

Wen-Xiong Song; Guangjie Shi; Qi Hu; Fan Zhu; Tianjiao Xin; Ying Chen; Sergiu Clima; Gilberto Teobaldi; Yuhao Wang; Wenjian Huang; Sannian Song; Cheol Seong Hwang; Li-Min Liu; Yan Cheng; Zhitang Song

Schottky contact modulation at a-GeSe/TiN interface for ovonic switching selectors 双向开关选择器在a-GeSe/TiN接口上的肖特基接触调制

APPLIED SURFACE SCIENCE

IF6.9

2025-04-01

OAAI

Slassi, Amine; Tavanti, Francesco; Clima, Sergiu; Garbin, Daniele; Calzolari, Arrigo

Chalcogenide Ovonic Threshold Switching Selector 硫族化合物双向阈值开关选择器

NANO-MICRO LETTERS

IF36.3

2024-01-11

OAAI

Zhao, Zihao; Clima, Sergiu; Garbin, Daniele; Degraeve, Robin; Pourtois, Geoffrey; Song, Zhitang; Zhu, Min

In silico screening for As/Se-free ovonic threshold switching materials

NPJ COMPUTATIONAL MATERIALS

IF11.9

2023-06-03

OAAI

Clima, Sergiu; Matsubayashi, Daisuke; Ravsher, Taras; Garbin, Daniele; Delhougne, Romain; Kar, Gouri Sankar; Pourtois, Geoffrey

Ovonic Threshold Switch Chalcogenides: Connecting the First-Principles Electronic Structure to Selector Device Parameters 双向阈值开关硫族化物: 将第一原理电子结构连接到选择器器件参数

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-12-26

PREAI

Clima, Sergiu; Ravsher, Taras; Garbin, Daniele; Degraeve, Robin; Fantini, Andrea; Delhougne, Romain; Kar, Gouri Sankar; Pourtois, Geoffrey

Strain and ferroelectricity in wurtzite ScxAl1-xN materials

APPLIED PHYSICS LETTERS

IF3.6

2021-10-28

PREAI

Clima, Sergiu; Pashartis, Christopher; Bizindavyi, Jasper; McMitchell, Sean R. C.; Houssa, Michel; Van Houdt, Jan; Pourtois, Geoffrey

Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia

APPLIED PHYSICS LETTERS

IF3.6

2021-03-02

OAAI

McMitchell, Sean R. C.; Clima, Sergiu; Ronchi, Nicolo'; Banerjee, Kaustuv; Celano, Umberto; Popovici, Mihaela; Di Piazza, Luca; Van den Bosch, Geert; Van Houdt, Jan

Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-01

OAAI

Keukelier, Jonas; Opsomer, Karl; Nuytten, Thomas; Sergeant, Stefanie; Devulder, Wouter; Clima, Sergiu; Goux, Ludovic; Kar, Gouri Sankar; Detavernier, Christophe

Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-01

OAAI

Keukelier, Jonas; Opsomer, Karl; Nuytten, Thomas; Sergeant, Stefanie; Devulder, Wouter; Clima, Sergiu; Goux, Ludovic; Kar, Gouri Sankar; Detavernier, Christophe

Identifying alternative ferroelectric materials beyond Hf(Zr)O2

APPLIED PHYSICS LETTERS

IF3.6

2020-12-28

OAAI

Guo, Jing; Clima, Sergiu; Pourtois, Geoffrey; Van Houdt, Jan

Defect profiling in FEFET Si:HfO2 layers

APPLIED PHYSICS LETTERS

IF3.6

2020-11-17

OAAI

O'Sullivan, B. J.; Putcha, V; Izmailov, R.; Afanas'ev, V; Simoen, E.; Jung, T.; Higashi, Y.; Degraeve, R.; Truijen, B.; Kaczer, B.; Ronchi, N.; McMitchell, S.; Banerjee, K.; Clima, S.; Breuil, L.; Van den Bosch, G.; Linten, D.; Van Houdt, J.

Microcanonical RT-TDDFT simulations of realistically extended devices

JOURNAL OF CHEMICAL PHYSICS

IF3.1

2018-09-24

PREAI

Andermatt, Samuel; Bani-Hashemian, Mohammad Hossein; Ducry, Fabian; Bruck, Sascha; Clima, Sergiu; Pourtois, Geoffrey; VandeVondele, Joost; Luisier, Mathieu

Voltage-controlled reverse filament growth boosts resistive switching memory 电压控制的反向灯丝生长提高了电阻开关存储器

NANO RESEARCH

IF9

2018-02-02

PREAI

Belmonte, Attilio; Celano, Umberto; Chen, Zhe; Radhaskrishnan, Janaki; Redolfi, Augusto; Clima, Sergiu; Richard, Olivier; Bender, Hugo; Kar, Gouri Sankar; Vandervorst, Wilfried; Goux, Ludovic

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-03-16

PREAI

Celano, Umberto; de Beeck, Jonathan Op; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M.; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

APPLIED PHYSICS LETTERS

IF3.6

2015-07-06

PREAI

Zhao, Liang; Clima, Sergiu; Magyari-Kope, Blanka; Jurczak, Malgorzata; Nishi, Yoshio

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

APPLIED PHYSICS LETTERS

IF3.6

2015-02-02

PREAI

Chen, C. Y.; Goux, L.; Fantini, A.; Clima, S.; Degraeve, R.; Redolfi, A.; Chen, Y. Y.; Groeseneken, G.; Jurczak, M.

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

APPLIED PHYSICS LETTERS

IF3.6

2014-03-05

210

PREAI

Clima, S.; Wouters, D. J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G.

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

APPLIED PHYSICS LETTERS

IF3.6

2014-02-26

PREAI

Popovici, M.; Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J. -L.; Van Elshocht, S.; Jurczak, M.

First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

APPLIED PHYSICS LETTERS

IF3.6

2012-03-26

PREAI

Clima, S.; Chen, Y. Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G.

研究方向