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R

R. Ramesh

Albert Einstein College of Medicine

10H指数
48论文数
312被引数
收录论文 8
发表时间
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
err2021-12-01
err33
PREAI
errAjayan, J.; Nirmal, D.; Ramesh, R.; Bhattacharya, Sandip; Tayal, Shubham; Joseph, L. M. I. Leo; Thoutam, Laxman Raju; Ajitha, D.
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