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Wei Ke

chinese academy of sciences

70H指数
634论文数
1.9W被引数
收录论文 250
发表时间
Power Gain-Stable AlN/GaN MIS-HEMTs With Pulsed N2 Plasma-Treated In-Situ SiNx Gate Dielectric氮化铝/氮化镓金属绝缘体半导体高电子迁移率晶体管功率增益稳定性研究:脉冲氮气等离子体处理的现场氮化硅栅介质
err2026-06-17
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PREAI
errQingyi Zhang; Ke Wei; Jianchao Wang; Sheng Zhang; Kaiyu Wang; Jiaqi Guo; Xiaoqiang He; Zhuanli Ma; Junjie Feng; Shibo Fan; Xinguo Gao; Yankui Li; Sen Huang; Xinhua Wang; Xinyu Liu
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High-Performance AlN/GaN MIS-HEMT With Dual-Nitridation GeON Dielectric高性能AlN/GaN MIS-HEMT器件,采用双氮化处理的GeON介质层
err2026-01-12
err0
PREAI
errJianchao Wang; Ke Wei; Sheng Zhang; Kaiyu Wang; Jiaqi Guo; Xiaoqiang He; Ruizhe Zhang; Zhuanli Ma; Qingyi Zhang; Weijun Luo; Xiaojuan Chen; Weichao Wu; Xinguo Gao; Jiebin Niu; Yankui Li; Xiao Fu; Sen Huang; Xinhua Wang; Xinyu Liu
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Sky-FET: A Selective Area Regrown GaN Power Device With Enhanced Breakdown VoltageSky-FET:一种选择性区域再生长GaN功率器件,具有增强的击穿电压
err2026-01-06
err0
PREAI
errFuqiang Guo; Sen Huang; Qimeng Jiang; Xingyu Fu; Jiayi An; Xinhua Wang; Ke Wei; Xinyu Liu; Xinguo Gao; Lizhao Cen; Haoran Qie; Jianxun Liu; Qian Sun; Ning Tang; Xuelin Yang; Wen Liu; Bo Shen
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Pulsed N2 plasma surface treatment for AlGaN/GaN HEMTs prior to PECVD SiNx passivation to reduce plasma damage
err2024-11-18
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PREAI
errWang, Kaiyu; Wei, Ke; Zhang, Ruizhe; Zhang, Sheng; Guo, Jiaqi; He, Xiaoqiang; Wang, Jianchao; Huang, Sen; Zheng, Yingkui; Chen, Xiaojuan; Wang, Xinhua; Liu, Xinyu
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Strain-rate dependent fatigue behavior of T91 steel at 550 °C of liquid lead-bismuth eutectic
err2024-11-01
err0
PREAI
errXue, Baoquan; Tan, Jibo; Wu, Xinqiang; Zhang, Ziyu; Wang, Xiang; Ke, Wei
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