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D

D. Gotthold

pacific northwest national laboratory

H指数:17

被引数:1,051

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Atomic to Macroscale Assessment of Failure in Irradiated GaAs Solar Cell Microelectronics

从原子尺度到宏观尺度对辐照砷化镓太阳能电池微电子器件失效的评估

Microscopy and Microanalysis

IF3

2026-07-270

OAAI

Lightweighting cost impacts on market adoption and GHG emissions in US light-duty vehicle fleet

communications in transportation research

IF2.9

2024-10-240

OA

Catalytic Reduction of Graphene Oxide Membranes and Water Selective Channel Formation in Water-Alcohol Separations

IF3.6

2021-04-260

OAAI

Modeling the effects of loading scenario and thermal expansion coefficient on potential failure of cryo-compressed hydrogen vessels

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY

IF8.3

2020-09-018

OAAI

Highly Selective Supported Graphene Oxide Membranes for Water-Ethanol Separation

SCIENTIFIC REPORTS

IF3.9

2019-02-1928

OAAI

Graphene oxide membranes with high permeability and selectivity for dehumidification of air

IF11.6

2016-09-0154

OAAI

Molecular Dynamics Simulations Reveal that Water Diffusion between Graphene Oxide Layers is Slow

SCIENTIFIC REPORTS

IF3.9

2016-07-08130

OAAI

Anomalous water expulsion from carbon-based rods at high humidity

NATURE NANOTECHNOLOGY

IF34.9

2016-06-1315

PREAI

Spectroscopic Study of Graphene Oxide Membranes Exposed to Ultraviolet Light

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2016-06-0213

PREAI

NMR investigations of the dual targeting peptide of Thr-tRNA synthetase and its interaction with the mitochondrial Tom20 receptor in Arabidopsis thaliana

IF4.2

2012-08-314

OA

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

APPLIED PHYSICS LETTERS

IF3.6

2003-06-0241

PREAI

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

APPLIED PHYSICS LETTERS

IF3.6

2003-04-14145

PREAI

V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2002-03-1880

PREAI

GaNAs resonant-cavity avalanche photodiode operating at 1.064 μm

APPLIED PHYSICS LETTERS

IF3.6

2000-09-0423

PREAI

GaNAs avalanche photodiode operating at 0.94 μm

APPLIED PHYSICS LETTERS

IF3.6

2000-05-1517

PREAI

Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study

APPLIED PHYSICS LETTERS

IF3.6

1999-09-2021

PREAI