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M

Myounggon Kang

university of seoul

29H指数
222论文数
3.2K被引数
收录论文 31
发表时间
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Hydrogen-Stabilized Self-Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer-Based Keyword Spotting氢稳定自整流忆阻器阵列用于基于变压器的关键词识别中的可靠多级突触
errAdvanced Science
IF14.1
err2026-07-28
err0
errOAAI
errSeonjeong Lee; Seohyeon Ju; Won Joo Lee; Myounggon Kang; Sungjun Kim; Yoon Kim
err分享
err收藏
Soft detrap scheme for suppressing read-after-write-delay in 3D ferroelectric NAND arrays用于抑制3D铁电NAND阵列中写后读延迟的软陷阱方案
errMicroelectronic Engineering
IF3.1
err2026-05-23
err0
PREAI
errLee, Kyungmin; Song, Taehyeon; Kim, Giuk; Kang, Myounggon
err分享
err收藏
2 T DRAM characteristics applying a temperature-dependent a-IGZO TFT model2 T DRAM特性应用温度依赖性a-IGZO TFT模型
errMicroelectronic Engineering
IF3.1
err2026-04-17
err0
PREAI
errSunghyun Woo; Seongwoo Kim; Myounggon Kang
err分享
err收藏
Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory通过优化空字线电压实现低功耗堆栈级编程在3-D NAND闪存中的应用
errIEEE Journal of the Electron Devices Society
IF2.4
err2026-01-01
err0
PREAI
errLee, Kyungmin; Yoon, Gunwook; Baik, Seung Jae; Kang, Myounggon
err分享
err收藏
Impact of High-k Bandgap Engineering on V-NAND Cell Performance高k能带工程对V-NAND单元性能的影响
errIEEE Electron Device Letters
IF4.5
err2025-08-01
err0
PREAI
errMyeongsang Yun; Gyuhyeon Lee; Gunwook Yoon; Seungjae Baik; Myounggon Kang
err分享
err收藏
Random telegraph noise-based analysis of electron traps of sub-30-nm DRAM cell-array transistors in cryogenic operation基于随机电报噪声的亚30纳米DRAM存储单元阵列晶体管在低温工作条件下的电子陷阱分析
errResults in Physics
IF4.6
err2025-06-09
err0
errOAAI
errSangwon Lee; Ho Jung Lee; Ga Won Yang; Sungju Choi; Jingyu Park; Seonhaeng Lee; Gang-Jun Kim; Namhyun Lee; Yoon Kim; Myounggon Kang; Rock-Hyun Baek; Changhyun Kim; Ickhyun Song; Dae Hwan Kim
err分享
err收藏
Optimization of read operation for low power consumption in 3D NAND flash memory在3D NAND闪存中对读操作进行低功耗优化
errMICROELECTRONIC ENGINEERING
IF3.1
err2025-06-01
err0
PREAI
errPark, Jesun; Kim, Seongwoo; Cho, Taeyoung; Kang, Myounggon
err分享
err收藏
Analysis of Bias Temperature Instability in Peripheral CMOS Devices for Low-Temperature Memory Applications低温度存储应用中周边CMOS器件的偏置温度不稳定性分析
errIEEE Access
IF3.6
err2025-01-01
err0
errOAAI
errJung Rae Cho; Seungwon Go; Jingyu Park; Tae Jun Yang; Seonhaeng Lee; Namhyun Lee; Dong Keun Lee; Yoon Kim; Myounggon Kang; Rock-Hyun Baek; Changhyun Kim; Sangwan Kim; Dae Hwan Kim
err分享
err收藏
Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing具有高级电子突触和模拟开关的TiN/ZnO/SnO2/ZnO/Pt多层忆阻器的工程设计，用于神经形态计算
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2024-10-01
err1
PREAI
errIsmail, Muhammad; Kim, Sunghun; Rasheed, Maria; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun
err分享
err收藏
Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices
errMICROMACHINES
IF3
err2024-03-27
err1
errOAAI
errCho, Sangki; Kim, Sueyeon; Kang, Myounggon; Baik, Seungjae; Jeon, Jongwook
err分享
err收藏
Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning
errIEEE ACCESS
IF3.6
err2024-01-01
err1
errOAAI
errPark, Jun Hui; Kim, Jung Nam; Lee, Seonhaeng; Kim, Gang-Jun; Lee, Namhyun; Baek, Rock-Hyun; Kim, Dae Hwan; Kim, Changhyun; Kang, Myounggon; Kim, Yoon
err分享
err收藏
Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process
errNANOMATERIALS
IF4.3
err2023-10-28
err1
errOAAI
errKim, Minkang; Ju, Dongyeol; Kang, Myounggon; Kim, Sungjun
err分享
err收藏
Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computing
errACS MATERIALS LETTERS
IF8.7
err2023-10-23
err5
PREAI
errIsmail, Muhammad; Rasheed, Maria; Kim, Sunghun; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun
err分享
err收藏
Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2023-10-01
err22
PREAI
errIsmail, Muhammad; Rasheed, Maria; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun
err分享
err收藏
Investigation on floating-gate field-effect transistor for logic-in-memory application
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2023-09-21
err2
PREAI
errKim, Sueyeon; Cho, Sangki; Choi, Insoo; Kang, Myounggon; Baik, Seungjae; Jeon, Jongwook
err分享
err收藏
SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing具有丝状开关机制的SnO2-Based存储器件，用于高级数据存储和计算
errNANOMATERIALS
IF4.3
err2023-09-21
err5
errOAAI
errIsmail, Muhammad; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun
err分享
err收藏
Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications用基于a-HfSiOx的忆阻器模拟生物突触: 对人工智能和记忆应用的影响
errNANO CONVERGENCE
IF11
err2023-07-10
err33
errOAAI
errIsmail, Muhammad; Rasheed, Maria; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun
err分享
err收藏
Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing
errCERAMICS INTERNATIONAL
IF5.6
err2023-06-01
err12
PREAI
errIsmail, Muhammad; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun
err分享
err收藏
Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN MemristorsITO/WOX/TaN忆阻器的模拟电阻开关和人工突触行为
errMATERIALS
IF3.2
err2023-02-17
err9
errOAAI
errCho, Youngboo; Kim, Jihyung; Kang, Myounggon; Kim, Sungjun
err分享
err收藏
Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)
errIEEE ACCESS
IF3.6
err2023-01-01
err4
errOAAI
errKim, Sueyeon; Choi, Insoo; Cho, Sangki; Kang, Myounggon; Baik, Seungjae; Ra, Changho; Jeon, Jongwook
err分享
err收藏

研究方向

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合作学者
合作期刊
S
Sanghun Jeon
H 指数: 52 · 论文数: 270
S
Sungjun Kim
H 指数: 46 · 论文数: 490
D
Dae Hwan Kim
H 指数: 40 · 论文数: 452
Y
Yoon Kim
H 指数: 38 · 论文数: 360
C
Chandreswar Mahata
H 指数: 38 · 论文数: 119
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