Changhwan Choi - Publications, H-index & Citations

Changhwan Choi

Dankook University

40H指数

191论文数

6.1K被引数

收录论文 80

发表时间

The rise of co-arranged lending 共同安排贷款的兴起

Financial Innovation

IF7.2

2026-09-03

OAAI

Changhwan Choi; Chune Young Chung

HeadLite: Compact Multi-Modal Sensor Fusion for Stride Length Estimation from Smart Insoles HeadLite：基于智能鞋垫步长估计的紧凑型多模态传感器融合

IEEE Sensors Journal

IF4.5

2026-08-28

PREAI

Yeonghwan Kim; Changhwan Choi; Kyunghwan Yoo; Sunoh Kim; Sang-Il Choi

Plasma dry desmear of Ajinomoto build-up film for fine micro-via fabrication in advanced semiconductor packaging 味之素层压薄膜的等离子体干法除胶渣工艺用于先进半导体封装中的精细微通孔制造

Materials Science in Semiconductor Processing

IF4.6

2026-06-22

PREAI

Gyulee Kim; Sunbum Kim; Kyoung Yeon Min; Young Ju Han; Soonoh Jeong; Mooseong Kim; Changhwan Choi

Material and Electrical Characteristics of a Thin-Film Transistor Using Cationic Composition-Controlled Atomic Layer-Deposited In–Ga–Sn–O (IGTO) Thin Film

ACS Applied Electronic Materials

IF4.7

2026-01-27

PREAI

Chanseul Lee; Sunbum Kim; Kyoung Yeon Min; Gyulee Kim; Minhyuk Kim; Yongjoo Park; Changhwan Choi

Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios 闪存中不同硅氮比氮化硅电荷捕获层中氢分布的影响

Advanced Electronic Materials

IF5.3

2025-07-21

OAAI

Sehyeon Choi; Yunseo Lim; Sejin Kim; San Park; Boncheol Ku; Hyungjun Kim; Jaehyun Yang; Bio Kim; Youngseon Son; Hanmei Choi; Changhwan Choi

Hydrophilic/Hydrophobic functionalization of HFBI-Graphene composite using intensity and direction of external electric field: In silico study 利用外部电场强度和方向对HFBI-Graphene复合材料进行亲水/疏水功能化的模拟研究

PROGRESS IN ORGANIC COATINGS

IF7.3

2025-07-01

PREAI

Park, Wooboum; Yoon, Taeyoung; Choi, Changhwan; You, Juneseok; Na, Sungsoo

The effects of inserted layers (HfO2, ZrO2, Y2O3, La2O3) on the ferroelectric and synaptic properties of Zr-doped HfO2 sandwich structure 插入层（HfO2, ZrO2, Y2O3, La2O3）对Zr掺杂HfO2三明治结构铁电和突触性能的影响

Applied Surface Science

IF6.9

2025-06-28

PREAI

Chulwon Chung; Kyungsoo Park; Seunghyeon Yun; Junhyeok Park; Hyeon Cheol Jeong; Changhwan Choi

Zirconium-doped hafnia (HfZrOx) ferroelectric capacitor with atomic layer deposited HfO2, ZrO2, and La2O3 interfacial layers 锆掺杂氧化铪（HfZrOx）铁电电容器，具有原子层沉积的HfO2、ZrO2和La2O3界面层

Ceramics International

IF5.6

2025-04-16

PREAI

Chulwon Chung; Jiyeon Lim; Boncheol Ku; Kyungsoo Park; Changhwan Choi

Enhanced electrical stability and reliability of amorphous IGZO/HfO2 thin film transistors with CF4 plasma treatment 通过CF4等离子体处理增强非晶IGZO/HfO2薄膜晶体管的电稳定性和可靠性

APPLIED SURFACE SCIENCE

IF6.9

2025-04-01

PREAI

Kim, Gyulee; Kim, Sunbum; Kim, Minhyuk; Choi, Changhwan

Heterogeneous monolithic 3D integration for hybrid vertical CMOS inverter using n-type IGTO TFT on p-type Si FET 在p型Si FET上使用n型IGTO TFT的混合垂直CMOS反相器的异构单片3D集成

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-01-01

PREAI

Lee, Chanseul; Kim, Sunbum; Kim, Gyulee; Choi, Changhwan

Polyurethane packed graphene-coated spider silk by dip-casting for a highly stretchable strain sensor

JOURNAL OF MATERIALS CHEMISTRY B

IF5.7

2025-01-01

PREAI

Abbas, Zaigham; Hassan, Gul; Khan, Muhammad Umair; Abbas, Haider; Ahmad, Basheer; Shuja, Ahmed; Sajid, Memoon; Bae, Jinho; Choi, Changhwan

Hf0.5Zr0.5O2/HfO2/Hf0.5Zr0.5O2 laminated thin films and CF4 plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistors

NANOSCALE

IF5.1

2025-01-01

OAAI

Park, Kyungsoo; Chung, Chulwon; Ku, Boncheol; Yun, Seunghyeon; Park, Junhyeok; Choi, Changhwan

The effect of shale gas booms on environmental CSR activity

INTERNATIONAL REVIEW OF FINANCIAL ANALYSIS

IF9.8

2024-10-01

PREAI

Choi, Changhwan; Chung, Chune Young

Improvement of synaptic property of GeSe based CBRAM by engineering the deposition condition of switching matrix

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-01

PREAI

Chung, Chulwon; Choi, Changhwan

Area-selective atomic layer deposition (AS-ALD) of low temperature (300 °C) cobalt thin film using octadecyltrichlorosilane (ODTS) self-assembled monolayers (SAMs)

APPLIED SURFACE SCIENCE

IF6.9

2024-08-01

PREAI

Kim, Chaewon; Choi, Moonsuk; Sim, Jihyun; Kim, Hyungjun; Choi, Changhwan

The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non-Volatile Devices

ADVANCED SCIENCE

IF14.1

2024-06-17

OAAI

Jeon, Yu-Rim; Seo, Donguk; Lee, Yoonmyung; Akinwande, Deji; Choi, Changhwan

Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-06-01

PREAI

Choi, Moonsuk; Sim, Jihyeon; Kim, Hyeongjun; Lim, Hyun Jin; Kim, Ki Sub; Choi, Changhwan

Synaptic Characteristics of Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors and Synapse-Neuron Arrayed Neuromorphic Hardware System 全耗尽绝缘体上硅金属氧化物半导体场效应晶体管和突触神经元阵列神经形态硬件系统的突触特性

ADVANCED INTELLIGENT SYSTEMS

IF6.1

2024-02-22

OAAI

Jeon, Yu-Rim; Kim, Jeong-Hoon; Akinwande, Deji; Choi, Changhwan

Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects

NANOSCALE HORIZONS

IF6.6

2024-01-01

PREAI

Jeon, Yu-Rim; Akinwande, Deji; Choi, Changhwan

Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial Synapses

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-12-02

PREAI

Jeon, Yu-Rim; Kim, Duho; Ku, Boncheol; Chung, Chulwon; Choi, Changhwan

研究方向