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Journal of Semiconductors 封面图

Journal of Semiconductors

IF5.3
论文数230
被引数3988
期刊论文 230
发表时间
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Transport mechanism of oxide-based programmable diode氧化物基可编程二极管的传输机制
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IF5.3
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deleteJunru Qu; Wentai Xia; Jifang Cao; Xueyang Li; Ran Cheng; Dong Liu; Bing Chen
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Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices: role of hydrogen in the passivation layer双极器件中低剂量率敏感性的增强和预辐照高温应力效应：钝化层中氢的作用
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deleteShilong Gou; Wuying Ma; Zhibin Yao; Zujun Wang; Jiangkun Sheng; Yuanyuan Xue
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Effects of cell topology and JFET width on depletion layer of SiC MOSFET碳化硅MOSFET中细胞拓扑结构和JFET宽度对耗尽层的影响
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deleteBofeng Zheng; Houcai Luo; Huan Wu; Jingping Zhang; Xianping Chen
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Gate oxide damage and synergistic effect on the breakdown voltage under reverse bias stress for SiC MOSFETSiC MOSFET在反向偏置应力下栅氧化层损伤及其协同效应对击穿电压的影响
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deleteZeng, Fanpeng; Cui, Yingxin; Liu, Zhixin; Lu, Zicheng; Lai, Lingling; Gong, Shoulai; Wang, Haochen; Dong, Peng; Han, Jisheng
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Challenges; development and future of silica abrasives in chemical mechanical polishing derived from past six decades挑战；过去六十年中化学机械抛光用二氧化硅磨料的开发与未来
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deleteZuozuo Wu; Jinglin Cheng; Zhiguo Yu; Wei Zhou; Yangjian Li; Jianwei Cao; Wei Sun; Shuai Yuan; Deren Yang
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The improvement of layout dependent Cu filling defect布局依赖性铜填充缺陷的改善
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deleteYu Zhang; Zhaoqin Zeng
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p-GaN HEMT current reference and current mirror for high temperature applicationp型GaN高电子迁移率晶体管电流基准与电流镜用于高温应用
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deletePingyu Cao; Kepeng Zhao; Zhengxuan Li; Yihao Xu; Ping Zhang; Harm Van Zalinge; Miao Cui; Fei Xue
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Low-voltage and high-reliability resistive switching in Si3N4:Si-NCs memristor structures低压和高可靠性阻变存储在Si3N4:Si-NCs忆阻器结构中
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deleteArely Vázquez Jiménez; Mario Moreno Moreno; Liliana Palacios Huerta; Pedro Rosales Quintero; Alfredo Morales Sánchez
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Ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck system超薄非晶氧化镓垂直肖特基势垒二极管基桥式整流器及其混合降压系统
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deleteHaifeng Chen; Yuduo Zhang; Xiexin Sun; Xuyang Liu; Chunling Chen; Xiangtai Liu; Jia Zhang; Yahan Zhu
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Realizing high-performance, enhanced write endurance of low-RA STT-MRAM through MgO tunnel barrier engineering通过MgO隧穿势垒工程实现低电阻面积自旋转移矩磁阻随机存取存储器的高性能和增强的写入耐久性
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deleteLi, Kunkun; Yang, Xiaolei; Gong, Junlu; He, Shikun
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Contrastive learning for data-efficient substrate deoxidation monitoring in edge-side adaptive molecular beam epitaxy systems对比学习用于边缘侧自适应分子束外延系统中数据高效衬底脱氧监测
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deleteLi, Yuehao; Shen, Chao; Zhan, Wenkang; Xu, Bo; Yang, Yazhou; Zhang, Xu; Wang, Hongchang; Zhao, Chao; Jian, Haifang
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High-speed single-mode 850 nm vertical-cavity surface-emitting laser高速单模850 nm垂直腔面发射激光器
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deleteSi-Cong Tian
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AlScN: characteristics; micro/nano fabrication and multiple applicationsAlScN：特性；微纳制造及多重应用
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deleteShihang Liu; Jinfeng Gao; Jiajie Pan; Lin Li; Hanxiang Jia; Shuangzan Lu; Maowei Zhang; Bo Zhao; Jun Liu
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Boosted IGZO optoelectronic synaptic performance by mitigating photolithography-induced surface effects通过缓解光刻诱导的表面效应增强IGZO光电突触性能
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deleteJingting Sun; Junyan Ren; Yuting Xiong; Yiting Cheng; Huize Tang; Hongfei Wu; Wangying Xu; Lingyan Liang; Hongtao Cao
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Programmable mixed-kernel based on MoTe2/MoS2 heterojunction for support vector machine learning基于MoTe₂/MoS₂异质结的可编程混合内核支持向量机学习
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deleteXinyu Huang; Jiapeng Du; Langlang Xu; Lei Tong; Xiangxiang Yu; Lei Ye
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Optimizing 55 nm split-gate memory for compute-in-memory: a focus on floating-gate engineering优化55 nm分裂栅极存储器用于存内计算：聚焦浮栅工程
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deleteWanyi Ling; Ranran Liu; Kun Ren; Dianyu Qi; Yongyu Wu; Guangji Li; Miao Zhou; Qingshuang Xu; Zhenghui Xia; Xuan Li; Dertsyr Fan; Ichun Chuang; Tzung Wen Cheng; Chenming Tsai; Dawei Gao
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Optimization and defect control in photoresist etch back processes for advanced semiconductor technologies雷, T.; 刘, Z.; 刘, Z.; 薛, G.; 孙, C.; 周, J.; 苗, X. 先进半导体技术中光刻胶回蚀工艺的优化与缺陷控制. 半导体学报, 2026, 47, 032102. [Google Scholar] [CrossRef]
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deleteTing Lei; Zhehong Liu; Zhiwen Liu; Guangjie Xue; Chun Sun; Jun Zhou; Xiangshui Miao
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A ZIF-derived ZnS@Co3S4 coupled with MXene and Ni-LDH on Ni foam: constructing a honeycomb-like electrode for advanced supercapacitorZIF衍生ZnS@Co₃S₄与MXene和Ni-LDH在镍泡沫上复合：构建蜂窝状电极用于先进超级电容器
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deleteXiang Luo; Kexin Li; Gentian Yue; Yueyue Gao; Chen Dong; Furui Tan
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1.1 kV/0.72 GW/cm2 β-Ga2O3 Fin-channel diode with ohmic contacts anode1.1 kV/0.72 GW/cm² β-Ga₂O₃ Fin-channel 二极管，具有欧姆接触阳极
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deleteGaofu Guo; Xiaodong Zhang; Chunhong Zeng; Dong Wei; Dengrui Zhao; Tiwei Chen; Zhucheng Li; Anjing Luo; Guangyuan Yu; Yu Hu; Zhongming Zeng; Baoshun Zhang; Xianqi Dai
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Flexible ITO TFTs with high mobility of 39.1 cm2·V−1·s−1 and excellent uniformity fabricated via mass-production compatible process通过大规模生产兼容工艺制备的高迁移率（39.1 cm²·V⁻¹·s⁻¹）且具有优异均匀性的柔性ITO TFTs
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deleteZuoxu Yu; Yuzhen Zhang; Tingrui Huang; Wenting Xu; Mingming Liu; Di Gui; Kaizhi Sui; Guangan Yang; Weifeng Sun; Runxiao Shi; Wangran Wu
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