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Yun Zhang

Chinese Academy of Sciences

H指数:24

被引数:2,588

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Simulation analysis of current collapse suppression in GaN HEMTs using a Si δ-doped cap layer

使用Si δ掺杂帽层抑制GaN HEMTs电流崩塌的仿真分析

Micro and Nanostructures

IF3

2025-11-190

PRE

High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation

APPLIED PHYSICS LETTERS

IF3.6

2025-04-010

PRE

Achieving Ultralow Specific Contact Resistivity in Ti/n+-GaN Ohmic Contacts by Mitigating the FLP Effect with a Gallium Oxide Interlayer

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-03-010

PRE

Boundary information-guided adversarial diffusion model for efficient unsupervised synthetic CT generation

MEDICAL PHYSICS

IF3.2

2025-02-010

PRE

Acoustofluidics-enhanced biosensing with simultaneously high sensitivity and speed

MICROSYSTEMS & NANOENGINEERING

IF9.9

2024-06-290

OAAI

GaN surface acoustic wave filter with low insertion loss

IF4.1

2023-07-012

PRE

AlN/Sapphire-Based SAW Resonators With Q Over 10000 for Temperature Sensors

IEEE SENSORS JOURNAL

IF4.5

2023-04-159

PRE

N-AlGaN Free Deep-Ultraviolet Light-Emitting Diode with Transverse Electron Injection

IF6.7

2023-02-148

PRE

Enhancement of charging performance of quantum battery via quantum coherence of bath

通过浴的量子相干增强量子电池的充电性能

chinese physics c

IF1.5

2023-01-015

PRE

A review on the GaN-on-Si power electronic devices

Gan-on-si电力电子器件综述

FUNDAMENTAL RESEARCH

IF6.3

2022-05-0186

OAAI

Optimization of selective-area regrown n-GaN via MOCVD for high-frequency HEMT

APPLIED PHYSICS LETTERS

IF3.6

2021-12-2712

PRE

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

IF3.2

2021-09-162

OAAI

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

IF3

2021-05-2710

OAAI

Terahertz strong-field physics in light-emitting diodes for terahertz detection and imaging (vol 4, 5, 2021)

COMMUNICATIONS PHYSICS

IF5.8

2021-04-150

OAAI

Terahertz strong-field physics in light-emitting diodes for terahertz detection and imaging

COMMUNICATIONS PHYSICS

IF5.8

2021-01-0415

OAAI

Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-0119

PRE

Structural characterization of AlN (11-22) films prepared by sputtering and thermal annealing on m-plane sapphire substrates

在m面蓝宝石衬底上通过溅射和热退火制备的AlN (11-22) 薄膜的结构表征

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2020-05-0115

PREAI

AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2019-07-0136

PREAI

Enhanced performance of AIN SAW devices with wave propagation along the ⟨11-20⟩ direction on c-plane sapphire substrate

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-03-1915

PREAI

Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by nano-trench-patterned AlN template

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2019-03-0114

PREAI