未登录

A

Antal A. Koós

HUN-REN Centre for Energy Research

H指数:31

被引数:3,082

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Strain-induced modulation of the local conductance in MoS2 layers on gold nanoparticles

应变诱导的金纳米粒子上的二硫化钼层局部电导率调制

Surfaces and Interfaces

IF6.3

2025-09-200

OAAI

Semiconducting Pt Structures Stabilized on 2D MoS2 Crystals Enable Ultrafast Hydrogen Evolution

二维MoS2晶体上稳定的半导体Pt结构实现超快氢气进化

Advanced Materials

IF26.8

2025-06-260

OA

Scalable growth of optically uniform MoWS2 alloys by sulfurization of ultrathin Mo/W stacks

通过硫化和铼化超薄Mo/W堆叠实现光学均匀的MoWS2合金的可扩展生长

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-05-300

OA

Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

APPLIED PHYSICS LETTERS

IF3.6

2024-06-112

OA

Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices

石墨烯和MoS2在碳化硅上的集成: 材料科学挑战和新型器件

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-05-013

OAAI

Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

APPLIED PHYSICS LETTERS

IF3.6

2024-03-041

OA

Interface Properties of MoS2 van der Waals Heterojunctions with GaN

IF4.3

2024-01-058

OAAI

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

通过脉冲激光沉积在蓝宝石和GaN衬底上生长的大面积MoS2薄膜

IF4.3

2023-10-264

OAAI

Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN

APPLIED SURFACE SCIENCE

IF6.9

2023-09-0115

OAAI

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC

ADVANCED MATERIALS INTERFACES

IF4.4

2022-10-047

OA

Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions

ADVANCED MATERIALS INTERFACES

IF4.4

2022-07-0720

OAAI

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

IF4.3

2022-01-0619

OAAI

Indium Nitride at the 2D Limit

2D极限的氮化铟

ADVANCED MATERIALS

IF26.8

2020-11-2356

OAAI

Moderate strain induced indirect bandgap and conduction electrons in MoS2 single layers

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2019-10-2560

OAAI

Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2019-09-0928

OAAI

Dynamic strain in gold nanoparticle supported graphene induced by focused laser irradiation

IF5.1

2018-01-013

OAAI

Time dependent decomposition of ammonia borane for the controlled production of 2D hexagonal boron nitride (vol 7, 14294, 2017)

SCIENTIFIC REPORTS

IF3.9

2017-11-224

OAAI

Time dependent decomposition of ammonia borane for the controlled production of 2D hexagonal boron nitride

SCIENTIFIC REPORTS

IF3.9

2017-10-3042

OAAI

Direct visualization of electrical transport-induced alloy formation and composition changes in filled multi-wall carbon nanotubes by in situ scanning transmission electron microscopy

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2017-10-011

PREAI

Targeted removal of copper foil surface impurities for improved synthesis of CVD graphene

IF11.6

2017-10-0139

OAAI