B. Pécz

HUN-REN Centre for Energy Research

H指数:40

被引数:5,564

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Epitaxial MgSnN₂ on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics

外延生长的MgSnN<sub>2</sub>在4H-SiC (0001)上：一种用于绿色光电子学和光伏技术的地球丰量氮化物

Advanced Optical Materials

IF7.2

2026-09-120

OAAI

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H-SiC MOS Structures Under Different Post-Oxidation Annealing

热氧化4H-SiC MOS结构在不同退火条件下的电学性质和界面应变

Advanced Electronic Materials

IF5.3

2026-08-300

OAAI

Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC

关于ALD在4H-SiC上生长铝基介电堆栈的见解

Nanomaterials

IF4.3

2026-07-270

Water-assisted grown ZnO transparent conductive oxide enables efficient thin-film solar cells

水辅助生长的氧化锌透明导电氧化物实现了高效薄膜太阳能电池

Journal of Alloys and Compounds

IF6.3

2026-03-010

OAAI

Composition-dependent structural and optical properties of combinatorially deposited, RF sputtered gallium oxynitride layers

Vacuum

IF3.9

2026-01-230

PRE

Local deformations quantified with the common sublattice method

使用共子晶格方法量化的局部变形

Nanoscale

IF5.1

2026-01-030

OAAI

Nucleation and faceting in (001) r-GeO2 heteroepitaxy on r-TiO2 by metalorganic vapor phase epitaxy

Applied Surface Science

IF6.9

2025-12-310

OAAI

Molecular beam epitaxy, electronic structure and phonon properties of Ca5Si3 films on Si(111)

分子束外延，电子结构和声子性质：Ca5Si3薄膜在Si(111)上的研究

Materials Letters

IF2.7

2025-10-240

PRE

Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga2O3 on Al2O3 (0001) and GaN (0001) Substrates

ACS Applied Materials and Interfaces

IF8.2

2025-10-010

PRE

Semiconducting Pt Structures Stabilized on 2D MoS2 Crystals Enable Ultrafast Hydrogen Evolution

二维MoS2晶体上稳定的半导体Pt结构实现超快氢气进化

Advanced Materials

IF26.8

2025-06-260

Scalable growth of optically uniform MoWS2 alloys by sulfurization of ultrathin Mo/W stacks

通过硫化和铼化超薄Mo/W堆叠实现光学均匀的MoWS2合金的可扩展生长

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-05-300

Mild Temperature Thermal Treatments of Gold-Exfoliated Monolayer MoS2

金剥离单层MoS2的温和温度热处理

NANOMATERIALS

IF4.3

2025-01-220

OAAI

Polytypism phenomenon in GaN nanocrystals grown on a van der Waals surface

在范德华表面生长的GaN纳米晶体中的多型现象

CRYSTENGCOMM

IF2.6

2025-01-010

PRE

Nanosecond laser annealing: Impact on superconducting silicon on insulator monocrystalline epilayers

APL MATERIALS

IF4.5

2024-12-020

Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

APPLIED PHYSICS LETTERS

IF3.6

2024-06-112

Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices

石墨烯和MoS2在碳化硅上的集成: 材料科学挑战和新型器件

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-05-013

OAAI

Towards aluminum oxide/aluminum nitride insulating stacks on 4H-SiC by atomic layer deposition

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-05-012

PRE

Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

APPLIED PHYSICS LETTERS

IF3.6

2024-03-041

Interface Properties of MoS2 van der Waals Heterojunctions with GaN

NANOMATERIALS

IF4.3

2024-01-058

OAAI

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

通过脉冲激光沉积在蓝宝石和GaN衬底上生长的大面积MoS2薄膜

NANOMATERIALS

IF4.3

2023-10-264

OAAI

B. Pécz

个人简介

教育背景

工作经历

荣誉奖项

研究方向