Hyunjin Park

Korea Research Institute of Chemical Technology

H指数:19

被引数:1,128

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Oxygen-Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute-In-Memory Systems (Adv. Funct. Mater. 66/2026)

氧隧道氧化铟锡垂直通道晶体管，具有增强的电流密度和可靠性，适用于单片3D存内计算系统（Adv. Funct. Mater. 66/2026）

Advanced Functional Materials

IF19

2026-09-070

OAAI

Oxygen-Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute-In-Memory Systems

含氧隧道铟锡氧化物垂直通道晶体管，具有增强的电流密度和可靠性，适用于单片3D存内计算系统

Advanced Functional Materials

IF19

2026-05-200

Comparative study of poly(para-xylylene) derivatives as gate dielectrics for organic field-effect transistors

聚对二甲苯衍生物作为有机场效应晶体管栅极介电材料的比较研究

Organic Electronics

IF2.6

2026-04-130

OAAI

Water-Borne Fluorinated Polyimide Dielectric for Large-Area IGZO Transistors and Logic Gates

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-11-260

PRE

Electrical and thermal transport properties of Cr2Se3-Cr2Te3 solid-solution alloy system and estimation of optimal thermoelectric properties

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-11-010

PRE

Understanding the role of additional Cu intercalation in electronic and thermal properties of p-type Cu 2.9 Te2-incorporated Bi0.5 Sb1.5 Te3 thermoelectric alloys

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-08-012

PRE

Controlling Fluorination Density of Soluble Polyimide Gate Dielectrics and its Influence on Organic Crystal Growth and Device Operational Stability

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-04-262

PRE

Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al2O3 Interlayer

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-02-055

PRE

Evolution of electrical transport properties in FeTe2-CoTe2 solid solution system for optimum thermoelectric performance

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2023-10-019

PRE

Impact of resonant state formation and band convergence in In and Sr co-doped SnTe thermoelectric material evaluated via the single parabolic band model

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2023-09-0120

PRE

Solution-processable and photocurable aromatic polyurea gate dielectrics for high-performance organic thin-film transistors

MATERIALS RESEARCH BULLETIN

IF5.7

2023-01-013

OAAI

High performance carbon nanotubes thin film transistors by selective ferric chloride doping

JOURNAL OF INFORMATION DISPLAY

IF3.4

2022-11-072

Reduction of the Error in the Electrical Characterization of Organic Field-Effect Transistors Based on Donor-Acceptor Polymer Semiconductors

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-09-011

PRE

Enhanced thermoelectric properties of I-doped polycrystalline Bi2O2Se oxyselenide

I掺杂多晶Bi2O2Se氧硒化物的增强热电性能

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T

IF6.6

2022-07-017

OAAI

Tailored Polymer Gate Dielectric Engineering to Optimize Flexible Organic Field-Effect Transistors and Complementary Integrated Circuits

定制聚合物栅极电介质工程，以优化柔性有机场效应晶体管和互补集成电路

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-06-1412

PREAI

Resist- and Etching-Free Patterning Mediated by Predefined Photosensitive Polyimide for Two-Dimensional Semiconductor-Based Photodetectors

ADVANCED MATERIALS INTERFACES

IF4.4

2021-01-159

PREAI

Controlling the gate dielectric properties of vinyl-addition polynorbornene copolymers via thiol-ene click chemistry for organic field-effect transistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-0112

PRE

A dual cross-linked aromatic polythiourea gate dielectric with multifunctional capabilities for organic field-effect transistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-015

PREAI

Highly conductive polyimide nanocomposite prepared using a graphene oxide liquid crystal scaffold

CARBON

IF11.6

2020-11-0122

PREAI

Enhanced hydrolytic and electrical stability of eco-friendly processed polyimide gate dielectrics for organic transistors

用于有机晶体管的环保加工聚酰亚胺栅极电介质的增强的水解和电稳定性

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2020-01-0120

PREAI

Hyunjin Park

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