E. Gheeraert - Publications, H-index & Citations

E. Gheeraert

communaute universite grenoble alpes

37H指数

211论文数

4.5K被引数

收录论文 27

发表时间

Fabrication and initial ion beam characterization of reactive ion etched diamond membranes for ion microbeam monitoring 反应离子刻蚀金刚石膜的制作及其在离子微束监控中的初始离子束表征

Diamond and Related Materials

IF5.1

2026-07-01

PREAI

Leonhart, C.; Gallin-Martel, M. -L.; Gheeraert, E.; Barberet, P.; Vianna-Legros, F.; Bes, A.; Dauvergne, D.; Gallin-Martel, L.; Hoarau, C.; Jouve, J.; Motte, J. -F.; Muraz, J. -F.; Reynaud, M.

Development of an atomic layer etching process for diamond substrates 金刚石衬底原子层刻蚀工艺的开发

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

IF2.1

2026-05-01

PREAI

Regnier, Marine; Kasprzak, Jacek; Dydnianski, Amadeusz; Rouchouze, Elliott; Traore, Aboulaye; Gheeraert, Etienne; Bonvalot, Marceline

Surface defects related to polishing cycle in β-Ga2O3 crystals grown by floating zone

APPLIED PHYSICS LETTERS

IF3.6

2023-06-01

OAAI

Perrier, Coralie; Traore, Aboulaye; Ito, Toshimitsu; Umezawa, Hitoshi; Gheeraert, Etienne; Ferrandis, Philippe

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry 高质量的SiO2/O终止金刚石界面: 带隙，带偏移和界面化学

NANOMATERIALS

IF4.3

2022-11-22

OAAI

Canas, Jesus; Reyes, Daniel F.; Zakhtser, Alter; Dussarrat, Christian; Teramoto, Takashi; Gutierrez, Marina; Gheeraert, Etienne

High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

APPLIED PHYSICS LETTERS

IF3.6

2022-08-15

PREAI

Canas, J.; Dussarrat, C.; Teramoto, T.; Masante, C.; Gutierrez, M.; Gheeraert, E.

Surface Recombinations in III-Nitride Micro-LEDs Probed by Photon-Correlation Cathodoluminescence 通过光子相关阴极发光探测的III族氮化物微led中的表面重组

ACS PHOTONICS

IF6.7

2021-12-07

OAAI

Finot, Sylvain; Le Maoult, Corentin; Gheeraert, Etienne; Vaufrey, David; Jacopin, Gwenole

Diamond/γ-alumina band offset determination by XPS

APPLIED SURFACE SCIENCE

IF6.9

2021-01-01

OAAI

Canas, J.; Alba, G.; Leinen, D.; Lloret, F.; Gutierrez, M.; Eon, D.; Pernot, J.; Gheeraert, E.; Araujo, D.

High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

APPLIED PHYSICS LETTERS

IF3.6

2018-03-09

PREAI

Pham, T. T.; Gutierrez, M.; Masante, C.; Rouger, N.; Eon, D.; Gheeraert, E.; Araujo, D.; Pernot, J.

Deep depletion concept for diamond MOSFET

APPLIED PHYSICS LETTERS

IF3.6

2017-10-26

PREAI

Pham, T. T.; Rouger, N.; Masante, C.; Chicot, G.; Udrea, F.; Eon, D.; Gheeraert, E.; Pernot, J.

Defect and field-enhancement characterization through electron-beam-induced current analysis

APPLIED PHYSICS LETTERS

IF3.6

2017-05-02

PREAI

Umezawa, Hitoshi; Gima, Hiroki; Driche, Khaled; Kato, Yukako; Yoshitake, Tsuyoshi; Mokuno, Yoshiaki; Gheeraert, Etienne

Carbon nanotube forest based electrostatic capacitor with excellent dielectric performances

CARBON

IF11.6

2017-05-01

PREAI

Yao, Shenghong; Yuan, Jinkai; Hasan-al Mehedi; Gheeraert, Etienne; Sylvestre, Alain

Effects of high-power laser irradiation on sub-superficial graphitic layers in single-crystal diamond

ACTA MATERIALIA

IF9.3

2016-01-01

OAAI

Picollo, F.; Rubanov, S.; Tomba, C.; Battiato, A.; Enrico, E.; Perrat-Mabilon, A.; Peaucelle, C.; Thi, T. N. Tran; Boarino, L.; Gheeraert, E.; Olivero, P.

Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor

APPLIED PHYSICS LETTERS

IF3.6

2015-10-05

PREAI

Marechal, A.; Aoukar, M.; Vallee, C.; Riviere, C.; Eon, D.; Pernot, J.; Gheeraert, E.

Doping and interface of homoepitaxial diamond for electronic applications

MRS BULLETIN

IF4.9

2014-06-12

PREAI

Yamasaki, Satoshi; Gheeraert, Etienne; Koide, Yasuo

Zr/oxidized diamond interface for high power Schottky diodes

APPLIED PHYSICS LETTERS

IF3.6

2014-02-06

140

OAAI

Traore, A.; Muret, P.; Fiori, A.; Eon, D.; Gheeraert, E.; Pernot, J.

Etching mechanism of diamond by Ni nanoparticles for fabrication of nanopores

CARBON

IF11.6

2013-08-01

OAAI

Mehadi, Hasan-al; Arnault, Jean-Charles; Eon, David; Hebert, Clement; Carole, Davy; Omnes, Franck; Gheeraert, Etienne

Metal oxide semiconductor structure using oxygen-terminated diamond

APPLIED PHYSICS LETTERS

IF3.6

2013-06-19

PREAI

Chicot, G.; Marechal, A.; Motte, R.; Muret, P.; Gheeraert, E.; Pernot, J.

A composite material made of carbon nanotubes partially embedded in a nanocrystalline diamond film

CARBON

IF11.6

2013-02-01

PREAI

Hebert, Clement; Ruffinatto, Sebastien; Eon, David; Mermoux, Michel; Gheeraert, Etienne; Omnes, Franck; Mailley, Pascal

Hole transport in boron delta-doped diamond structures

APPLIED PHYSICS LETTERS

IF3.6

2012-10-15

OAAI

Chicot, G.; Thi, T. N. Tran; Fiori, A.; Jomard, F.; Gheeraert, E.; Bustarret, E.; Pernot, J.

Investigation of nickel lattice sites in diamond: Density functional theory and x-ray absorption near-edge structure experiments

PHYSICAL REVIEW B

IF3.7

2012-08-22

OAAI

Gheeraert, Etienne; Kumar, Amit; Bustarret, Etienne; Ranno, Laurent; Magaud, Laurence; Joly, Yves; Pascarelli, Sakura; Ruffoni, Matthew; Avasthi, Devesh Kumar; Kanda, Hisao

研究方向