Hitoshi Umezawa - Publications, H-index & Citations

Hitoshi Umezawa

National Institute of Advanced Industrial Science and Technology

55H指数

660论文数

1.4W被引数

收录论文 34

发表时间

Attempting continuous operation at 300 °C for an amplification circuit using a diamond MOSFET 尝试使用金刚石MOSFET的放大电路在300 °C下进行连续运行

Diamond and Related Materials

IF5.1

2025-12-09

PREAI

Hiroki Fukushima; Shuzo Idenawa; Yuhei Seki; Asahi Okuno; Tadashi Masumura; Hitoshi Umezawa; Yasuhito Matsubayashi; Mitsugu Sohma; Jun Akedo; Mikio Higuchi; Yosuke Ito; Naohisa Hoshikawa; Junichi H. Kaneko

Fabrication and evaluation of normally-off diamond MESFETs toward the development of radiation-resistant and high-temperature operating digital circuits 制备与评估常关型金刚石MESFETs，旨在开发耐辐射和高温运行的数字电路

Diamond and Related Materials

IF5.1

2025-12-01

PREAI

Asahi Okuno; Tadashi Masumura; Yuhei Seki; Hitoshi Umezawa; Hiroyuki Kawashima; Toshiharu Makino; Junichi H. Kaneko

Formation of diamond trenches with flat {111} sidewalls via thermochemical etching by Ni films in water vapor 通过Ni薄膜在蒸汽中的热化学刻蚀，形成具有平坦{111}侧壁的金刚石沟槽

Applied Surface Science Advances

IF8.7

2025-11-09

OAAI

Masatsugu Nagai; Tsubasa Matsumoto; Satoshi Yamasaki; Norio Tokuda; Moriyoshi Haruyama; Yukako Kato; Hironori Yoshioka; Hitoshi Umezawa; Hiromitsu Kato; Masahiko Ogura; Daisuke Takeuchi; Yoshiyuki Miyamoto; Toshiharu Makino

High-spatial resolution analysis of dislocation bundles in homoepitaxial single-crystal diamond by HR-EBSD 高空间分辨率下同质外延单晶金刚石中位错束的HR-EBSD分析

DIAMOND AND RELATED MATERIALS

IF5.1

2025-06-01

PREAI

Tanaka, Koji; Mokuno, Yoshiaki; Umezawa, Hitoshi; Shimaoka, Takehiro; Yamada, Hideaki

SiC-based high electron mobility transistor

APPLIED PHYSICS LETTERS

IF3.6

2024-03-18

PREAI

Sazawa, Hiroyuki; Nakajima, Akira; Kuboya, Shigeyuki; Umezawa, Hitoshi; Kato, Tomohisa; Tanaka, Yasunori

Temperature Dependence of Betavoltaic Cell Performance of Diamond pn Junction Diode

IEEE ELECTRON DEVICE LETTERS

IF4.5

2024-01-01

OAAI

Shimaoka, Takehiro; Umezawa, Hitoshi; Jacopin, Gwenole; Koizumi, Satoshi; Fujiwara, Takeshi; Pernot, Julien

Surface defects related to polishing cycle in β-Ga2O3 crystals grown by floating zone

APPLIED PHYSICS LETTERS

IF3.6

2023-06-01

OAAI

Perrier, Coralie; Traore, Aboulaye; Ito, Toshimitsu; Umezawa, Hitoshi; Gheeraert, Etienne; Ferrandis, Philippe

Thermally Stable and Radiation-Proof Visible-Light Photodetectors Made from N-Doped Diamond 由N掺杂金刚石制成的热稳定且防辐射的可见光光电探测器

ADVANCED OPTICAL MATERIALS

IF7.2

2023-04-07

PREAI

Sittimart, Phongsaphak; Ohmagari, Shinya; Umezawa, Hitoshi; Kato, Hiromitsu; Ishiji, Kotaro; Yoshitake, Tsuyoshi

Changes in cross-sectional areas of posterior extensor muscles in thoracic spine: a 10-year longitudinal MRI study

SCIENTIFIC REPORTS

IF3.9

2022-08-30

OAAI

Umezawa, Hitoshi; Daimon, Kenshi; Fujiwara, Hirokazu; Nishiwaki, Yuji; Michikawa, Takehiro; Okada, Eijiro; Nojiri, Kenya; Watanabe, Masahiko; Katoh, Hiroyuki; Shimizu, Kentaro; Ishihama, Hiroko; Fujita, Nobuyuki; Tsuji, Takashi; Nakamura, Masaya; Matsumoto, Morio; Watanabe, Kota

Radiation hardened H-diamond MOSFET (RADDFET) operating after 1 MGy irradiation

APPLIED PHYSICS LETTERS

IF3.6

2021-04-20

PREAI

Yamaguchi, Takahiro; Umezawa, Hitoshi; Ohmagari, Shinya; Koizumi, Hitoshi; Kaneko, Junichi H.

Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions

SCRIPTA MATERIALIA

IF5.6

2021-01-01

PREAI

Matsumae, Takashi; Kurashima, Yuichi; Takagi, Hideki; Umezawa, Hitoshi; Higurashi, Eiji

High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers

APPLIED PHYSICS LETTERS

IF3.6

2020-12-29

PREAI

Hanada, Takanori; Ohmagari, Shinya; Kaneko, Junichi H.; Umezawa, Hitoshi

Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning

APPLIED PHYSICS LETTERS

IF3.6

2020-11-17

PREAI

Fukumoto, Shoya; Matsumae, Takashi; Kurashima, Yuichi; Takagi, Hideki; Umezawa, Hitoshi; Hayase, Masanori; Higurashi, Eiji

Ultrahigh conversion efficiency of betavoltaic cell using diamond pn junction

APPLIED PHYSICS LETTERS

IF3.6

2020-09-11

OAAI

Shimaoka, T.; Umezawa, H.; Ichikawa, K.; Pernot, J.; Koizumi, S.

Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions

APPLIED PHYSICS LETTERS

IF3.6

2020-04-09

PREAI

Matsumae, Takashi; Kurashima, Yuichi; Umezawa, Hitoshi; Tanaka, Koji; Ito, Toshimitsu; Watanabe, Hideyuki; Takagi, Hideki

Hydrophilic low-temperature direct bonding of diamond and Si substrates under atmospheric conditions

SCRIPTA MATERIALIA

IF5.6

2020-01-01

PREAI

Matsumae, Takashi; Kurashima, Yuichi; UmezaWa, Hitoshi; Takagi, Hideki

Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries

APPLIED PHYSICS LETTERS

IF3.6

2019-03-01

PREAI

Ohmagari, Shinya; Yamada, Hideaki; Tsubouchi, Nobuteru; Umezawa, Hitoshi; Chayahara, Akiyoshi; Seki, Akinori; Kawaii, Fumiaki; Saitoh, Hiroaki; Mokuno, Yoshiaki

Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations

APPLIED PHYSICS LETTERS

IF3.6

2018-07-19

PREAI

Ohmagari, Shinya; Yamada, Hideaki; Tsubouchi, Nobuteru; Umezawa, Hitoshi; Chayahara, Akiyoshi; Tanaka, Shingo; Mokuno, Yoshiaki

Recent advances in diamond power semiconductor devices

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-05-01

162

PREAI