Alan G. Jacobs - Publications, H-index & Citations

Alan G. Jacobs

U.S. Naval Research Laboratory

14H指数

93论文数

1.1K被引数

收录论文 20

发表时间

Investigation of Freestanding Macroscopic SiO2/ZnO:Al Nanocomposites Grown by Atomic Layer Deposition and Environmentally Controlled Pressure-Assisted Sintering 通过原子层沉积和环境控制压力辅助烧结制备的独立式宏观SiO2/ZnO:Al纳米复合材料的表征

Microscopy and Microanalysis

IF3

2026-07-27

OAAI

Zoey Warecki; Kevin P Anderson; Benjamin L Greenberg; Todd H Brintlinger; Marc Currie; Joseph C Prestigiacomo; Daniel J Pennachio; Alan G Jacobs; Austin J Cendejas; Eric A Patterson; James A Wollmershauser; Boris N Feigelson

Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10⁴

IEEE Electron Device Letters

IF4.5

2025-11-25

PREAI

James Spencer Lundh; Brianna A. Klein; Andrew A. Allerman; Andrew J. Cantrell; Alfred Zhao; Daniel J. Pennachio; GlenAsia Gonzalez; Eric Cruz; Tolen M. Nelson; Geoffrey M. Foster; Alan G. Jacobs; Andrew D. Koehler; Marko J. Tadjer; Giovanni Esteves; Roy H. Olsson; Andrew M. Armstrong; Karl D. Hobart; Michael A. Mastro

Selective Thermal Mapping of Wide and Ultrawide Band Gap Semiconductor Devices Using Mechanically Exfoliated MoS2 Flakes 利用机械剥离的MoS2薄片对宽带隙和超宽带隙半导体器件进行选择性热成像

ACS Applied Electronic Materials

IF4.7

2025-07-14

PREAI

James Spencer Lundh; Hsun-Jen Chuang; Cory D. Cress; Alan G. Jacobs; Berend T. Jonker; Travis J. Anderson; Karl D. Hobart; Michael A. Mastro; Marko J. Tadjer

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

ADVANCED MATERIALS INTERFACES

IF4.4

2024-10-22

OAAI

Aller, Henry T.; Pfeifer, Thomas W.; Mamun, Abdullah; Huynh, Kenny; Tadjer, Marko; Feygelson, Tatyana; Hobart, Karl; Anderson, Travis; Pate, Bradford; Jacobs, Alan; Lundh, James Spencer; Goorsky, Mark; Khan, Asif; Hopkins, Patrick; Graham, Samuel

Reduced temperature in lateral (AlxGa1-x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

APPLIED PHYSICS LETTERS

IF3.6

2024-04-10

OAAI

Masten, Hannah N.; Lundh, James Spencer; Feygelson, Tatyana I.; Sasaki, Kohei; Cheng, Zhe; Spencer, Joseph A.; Liao, Pai-Ying; Hite, Jennifer K.; Pennachio, Daniel J.; Jacobs, Alan G.; Mastro, Michael A.; Feigelson, Boris N.; Kuramata, Akito; Ye, Peide; Graham, Samuel; Pate, Bradford B.; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

SCIENTIFIC REPORTS

IF3.9

2024-03-28

OAAI

Gallagher, James C.; Mastro, Michael A.; Jacobs, Alan G.; Kaplar, Robert. J.; Hobart, Karl D.; Anderson, Travis J.

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

APPLIED PHYSICS LETTERS

IF3.6

2024-03-25

OAAI

Senarath, A. S.; Islam, S.; Sengupta, A.; McCurdy, M. W.; Anderson, T.; Jacobs, A.; Kaplar, R.; Ball, D. R.; Zhang, E. X.; Pantelides, S. T.; Reed, R. A.; Ebrish, M. A.; Fleetwood, D. M.; Caldwell, J. D.; Schrimpf, R. D.

Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

APPLIED PHYSICS LETTERS

IF3.6

2024-01-31

PREAI

Lundh, James Spencer; Pavlidis, Georges; Sasaki, Kohei; Centrone, Andrea; Spencer, Joseph A.; Masten, Hannah N.; Currie, Marc; Jacobs, Alan G.; Konishi, Keita; Kuramata, Akito; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.

Using machine learning with optical profilometry for GaN wafer screening

SCIENTIFIC REPORTS

IF3.9

2023-02-27

OAAI

Gallagher, James C.; Mastro, Michael A.; Ebrish, Mona A.; Jacobs, Alan G.; Gunning, Brendan P.; Kaplar, Robert J.; Hobart, Karl D.; Anderson, Travis J.

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

APPLIED PHYSICS LETTERS

IF3.6

2022-11-07

OAAI

Spencer, Joseph A.; Tadjer, Marko J.; Jacobs, Alan G.; Mastro, Michael A.; Lyons, John L.; Freitas, Jaime A.; Gallagher, James C.; Thieu, Quang T.; Sasaki, Kohei; Kuramata, Akito; Zhang, Yuhao; Anderson, Travis J.; Hobart, Karl D.

Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2022-08-18

OAAI

Yoo, Timothy; Xia, Xinyi; Ren, Fan; Jacobs, Alan; Tadjer, Marko J.; Pearton, Stephen; Kim, Honggyu

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3 透明导电和半导体氧化物的能带结构和材料性能综述: Ga2O3，Al2O3，In2O3，ZnO，SnO2，CdO，NiO，CuO和Sc2O3

APPLIED PHYSICS REVIEWS

IF11.6

2022-03-04

192

PREAI

Spencer, Joseph A.; Mock, Alyssa L.; Jacobs, Alan G.; Schubert, Mathias; Zhang, Yuhao; Tadjer, Marko J.

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

SCIENTIFIC REPORTS

IF3.9

2022-01-13

OAAI

Gallagher, James C.; Ebrish, Mona A.; Porter, Matthew A.; Jacobs, Alan G.; Gunning, Brendan P.; Kaplar, Robert J.; Hobart, Karl D.; Anderson, Travis J.

Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1-xN determined by infrared spectroscopic ellipsometry

APPLIED PHYSICS LETTERS

IF3.6

2020-12-10

OAAI

Mock, Alyssa L.; Jacobs, Alan G.; Jin, Eric N.; Hardy, Matthew T.; Tadjer, Marko J.

Temperature Excursions Due to the Reaction Heat Produced by Atomic Layer Deposition on Nanostructured Substrates

CHEMISTRY OF MATERIALS

IF7

2020-11-24

PREAI

Greenberg, Benjamin L.; Anderson, Kevin P.; Wolak, Mason A.; Jacobs, Alan G.; Wollmershauser, James A.; Feigelson, Boris N.

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-10-28

PREAI

Tadjer, Marko J.; Alema, Fikadu; Osinsky, Andrei; Mastro, Michael A.; Nepal, Neeraj; Woodward, Jeffrey M.; Myers-Ward, Rachael L.; Glaser, Evan R.; Freitas, Jaime A.; Jacobs, Alan G.; Gallagher, James C.; Mock, Alyssa L.; Pennachio, Daniel J.; Hajzus, Jenifer; Ebrish, Mona; Anderson, Travis J.; Hobart, Karl D.; Hite, Jennifer K.; Eddy Jr., Charles R.

Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing 无溶剂高温激光退火超快自组装亚10 nm嵌段共聚物纳米结构

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-06-09

PREAI

Jiang, Jing; Jacobs, Alan G.; Wenning, Brandon; Liedel, Clemens; Thompson, Michael O.; Ober, Christopher K.

Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing

MACROMOLECULES

IF5.2

2016-08-22

PREAI

Jacobs, Alan G.; Liedel, Clemens; Peng, Hui; Wang, Linxi; Smilgies, Detlef-M.; Ober, Christopher K.; Thompson, Michael O.